Calibration of MEMS Strain Sensors Fabricated on Silicon

2001 ◽  
Author(s):  
Li Cao ◽  
Chuck Hautamaki ◽  
Jia Zhou ◽  
Tae Song Kim ◽  
Sue Mantell
Keyword(s):  
Silicon Wafer ◽  
Near Field ◽  
Strain Sensor ◽  
Field Strain ◽  
Sensor Calibration ◽  
Far Field ◽  
Calibration Technique ◽  
Gage Factor ◽  
Mems Sensor ◽  
Aluminum Specimen

Abstract A calibration technique for measuring MEMS strain sensor performance is described. The sensor calibration technique entails developing a repeatable relationship (gage factor) between the change in sensor nominal resistance and the strain measured at the sensor. The calibration technique involves creating a “pseudo” strain sensor consisting of a strain gage mounted on a silicon wafer. Two identical test specimens are evaluated: the pseudo sensor mounted (with adhesive) on an aluminum specimen (or embedded in a specimen), and a MEMS strain sensor mounted on an aluminum specimen (or embedded in a specimen). The dimensions of the silicon wafer for both the pseudo sensor and MEMS sensor are identical. The specimens are loaded by tensile test. For the pseudo sensor specimen, a relationship is established between the strain applied to the specimen (far field strain) and the strain at the sensor (near field strain). Once the relationship between near field and far field strain is known, a relationship between near field strain and change in resistance of the uncalibrated MEMs sensor is established. This relationship between strain at the sensor and change in resistance is the gage factor. Two different MEMS strain sensor designs were fabricated by patterning polysilicon on a 500 micron thick silicon wafer: monofilament and membrane sensors. Gage factors for the MEMS sensors were determined following the calibration procedure. The results also lead to a conclusion that wafer geometry influences the strain transfer to the sensor.

Realtime Wellbore Digitalization for Stimulations Using Multi-Well Fiber Optics

2021 ◽  
Author(s):  
Xinyang Li ◽  
Andres J. Chavarria ◽  
Yassine Oukaci
Keyword(s):  
Real Time ◽  
Fiber Optics ◽  
Near Field ◽  
Fracture Propagation ◽  
Field Strain ◽  
Far Field ◽  
Time Data ◽  
Strain Measurements ◽  
Well Stimulation ◽  
Time Operation

Abstract Distributed Fiber-optic Sensing (DFOS) provides real-time data acquisition, monitoring and diagnostics for well stimulation and well spacing assessment. These include measurements of Distributed Acoustic Sensing (DAS) with high frequency acoustics in treatment wells, and low frequency strain/temperature sensing in offset monitor ones. The goal of this integrated study is to show the value of multi-well fiber sensing for real time fracturing diagnostics and stimulation optimization. By integrating near field injection to far field strain responses we assess overall reservoir development. The availability of fibers on both the treatment well and a nearby observation well allows us to investigate the near-wellbore injection profile and the far-field strain fracture propagation. Quantitative strain levels clearly respond to the effects of well distance, location and treatment well stimulation design. Monitoring well strain measurements of fracture density and triggered stimulated span were logged and compared to acoustic signals in the nearfield stage by stage. DAS interpretation was conducted during the treatment of each stage indicating the effectiveness and efficiency of the completion design. Results show that this is a very effective tool to better understand the performance of the fracturing treatment by digital transformation using DAS data. In addition, acoustic and strain measurements also validated its diagnostic capability for real-time operation monitoring. In this presentation we show how the near-field acoustic and far-field strain measurements allow for better understanding of the completion efficiency. This is by assessing the far field response to quantified DAS injected signals in the treatment. This analysis takes advantage of fiber installation on both the treatment and nearby monitor well. The fluid and proppant allocations in the near field were performed on the treatment well using relative acoustic intensities. Meanwhile, the fracture propagation induced strain change is recorded by the offset fiber well. Using this fiber data reveals dominant clusters and stage bias from near-field injection profile. Simultaneously the far-field identified fracture counts from strain further enable a geomechanical assessment of the stimulated reservoir and assess the effectiveness of the completion design. Multiple DAS fiber equipped wells not only provide single diagnostic tool for each of the fiber well, but also demonstrate significant integrated assessment of the stimulation effectiveness, completion efficiency, well interaction, and reservoir description. Availability of near and far field measurements constitutes an important tool to assess properties of the reservoir. Here we show how different vantage points can help illuminate a fracturing program in unconventional reservoirs.

Near-field strain in DAS-based microseismic observation

Geophysics ◽  
2021 ◽  
pp. 1-49
Author(s):  
Ge Jin ◽  
Frantisek Stanek ◽  
Bin Luo
Keyword(s):  
Hydraulic Fracture ◽  
Fiber Optic ◽  
Moment Tensor ◽  
Near Field ◽  
Source Parameters ◽  
Field Strain ◽  
Far Field ◽  
Normal Strain ◽  
S Wave ◽  
Sign Patterns

Microseismic monitoring with surface or downhole geophone arrays has been commonly used in tracking subsurface deformation and fracture networks during hydraulic fracturing operations. Recently, the use of fiber-optic DAS technology has improved microseismic acquisition to a new level with unprecedentedly high spatial resolution and low cost. Deploying fiber-optic cables in horizontal boreholes allows very close observation of these micro-sized earthquakes and captures their full wavefield details. We show that DAS-based microseismic profiles present a seldomly reported near-field strain signal between the P- and S-wave arrivals. This near-field signal shows monotonically increasing (or decreasing) temporal variation, which resembles the previously reported near-field observations of large earthquakes. To understand the near-field strain behavior, we provide a mathematical expression of the analytic normal strain solution that reveals the near-field, intermediate-near-field, intermediate-far-field, and far-field components. Synthetic DAS strain records of hydraulic-fracture-induced microseismic events can be generated using this analytic solution with the Brune source model. The polarity sign patterns of the near-field and far-field terms in these synthetics are linked to the corresponding source mechanism’s radiation patterns. These polarity sign patterns are demonstrated to be sensitive to the source orientations by rotating the moment tensor in different directions. A field data example is compared to the synthetic result and a qualitative match is shown. The microseismic near-field signals detected by DAS have potential value in hydraulic fracture monitoring by providing a means to better constrain microseismic source parameters that characterize the source magnitude, source orientation, and temporal source evolution, and therefore better reflect the geomechanical response of the hydraulically fractured environment in the unconventional reservoirs.

scholarly journals Noninvasive, near-field terahertz imaging of hidden objects using a single-pixel detector

2016 ◽  
Vol 2 (6) ◽  
pp. e1600190 ◽  
Author(s):  
Rayko Ivanov Stantchev ◽  
Baoqing Sun ◽  
Sam M. Hornett ◽  
Peter A. Hobson ◽  
Graham M. Gibson ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Ex Vivo ◽  
Imaging Techniques ◽  
Near Field ◽  
Circuit Board ◽  
Thz Radiation ◽  
Single Element ◽  
Far Field ◽  
Thz Imaging ◽  
Subwavelength Resolution

Terahertz (THz) imaging can see through otherwise opaque materials. However, because of the long wavelengths of THz radiation (λ = 400 μm at 0.75 THz), far-field THz imaging techniques suffer from low resolution compared to visible wavelengths. We demonstrate noninvasive, near-field THz imaging with subwavelength resolution. We project a time-varying, intense (>100 μJ/cm2) optical pattern onto a silicon wafer, which spatially modulates the transmission of synchronous pulse of THz radiation. An unknown object is placed on the hidden side of the silicon, and the far-field THz transmission corresponding to each mask is recorded by a single-element detector. Knowledge of the patterns and of the corresponding detector signal are combined to give an image of the object. Using this technique, we image a printed circuit board on the underside of a 115-μm-thick silicon wafer with ~100-μm (λ/4) resolution. With subwavelength resolution and the inherent sensitivity to local conductivity, it is possible to detect fissures in the circuitry wiring of a few micrometers in size. THz imaging systems of this type will have other uses too, where noninvasive measurement or imaging of concealed structures is necessary, such as in semiconductor manufacturing or in ex vivo bioimaging.

Far-field and near-field strain response of Automated Tow-Placed laminates to stress concentrations

1993 ◽  
Vol 3 (11) ◽  
pp. 1087-1097 ◽  
Author(s):  
Douglas S. Cairns ◽  
Larry B. Ilcewicz ◽  
Tom Walker
Keyword(s):  
Near Field ◽  
Field Strain ◽  
Far Field ◽  
Strain Response ◽  
Stress Concentrations

Magnetic Tag Antenna for UHF Near-field and Far-Field RFID Applications

2015 ◽  
Vol 5 (2) ◽  
pp. 119
Author(s):  
Mondher Dhaouadi ◽  
M. Mabrouk ◽  
T. Vuong ◽  
A. Ghazel
Keyword(s):  
Near Field ◽  
Far Field ◽  
Rfid Applications

Far field modeling of the Mamala Bay outfalls

1998 ◽  
Vol 38 (10) ◽  
pp. 323-330
Author(s):  
Philip J. W. Roberts
Keyword(s):  
Field Model ◽  
Near Field ◽  
Far Field ◽  
Field Modeling ◽  
Visitation Frequency ◽  
Statistical Variation ◽  
Long Time ◽  
Harmonic Average ◽  
Ocean Outfall ◽  
Acoustic Doppler Current Profilers

The results of far field modeling of the wastefield formed by the Sand Island, Honolulu, ocean outfall are presented. A far field model, FRFIELD, was coupled to a near field model, NRFIELD. The input data for the models were long time series of oceanographic observations over the whole water column including currents measured by Acoustic Doppler Current Profilers and density stratification measured by thermistor strings. Thousands of simulations were made to predict the statistical variation of wastefield properties around the diffuser. It was shown that the visitation frequency of the wastefield decreases rapidly with distance from the diffuser. The spatial variation of minimum and harmonic average dilutions was also predicted. Average dilution increases rapidly with distance. It is concluded that any impact of the discharge will be confined to a relatively small area around the diffuser and beach impacts are not likely to be significant.

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