Vibrational Contribution to Thermal Conductivity of Silicon Near Solid-Liquid Transition

Author(s):  
Christopher H. Baker ◽  
Chengping Wu ◽  
Richard N. Salaway ◽  
Leonid V. Zhigilei ◽  
Pamela M. Norris

Although thermal transport in silicon is dominated by phonons in the solid state, electrons also participate as the system approaches, and exceeds, its melting point. Thus, the contribution from both phonons and electrons must be considered in any model for the thermal conductivity, k, of silicon near the melting point. In this paper, equilibrium molecular dynamics simulations measure the vibration mediated thermal conductivity in Stillinger-Weber silicon at temperatures ranging from 1400 to 2000 K — encompassing the solid-liquid phase transition. Non-equilibrium molecular dynamics is also employed as a confirmatory study. The electron contribution may then be estimated by comparing these results to experimental measurements of k. The resulting relationship may provide a guide for the modeling of heat transport under conditions realized in high temperature applications, such as laser irradiation or rapid thermal processing of silicon substrates.

Author(s):  
Zhiting Tian ◽  
Sang Kim ◽  
Ying Sun ◽  
Bruce White

The phonon wave packet technique is used in conjunction with the molecular dynamics simulations to directly observe phonon scattering at material interfaces. The phonon transmission coefficient of nanocomposites is examined as a function of the defect size, thin film thickness, orientation of interface to the heat flow direction. To generalize the results based on phonons in a narrow frequency range and at normal incidence, the effective thermal conductivity of the same nanocomposite structure is calculated using non-equilibrium molecular dynamics simulations for model nanocomposites formed by two mass-mismatched Ar-like solids and heterogeneous Si-SiCO2 systems. The results are compared with the modified effective medium formulation for nanocomposites.


Author(s):  
Arian Mayelifartash ◽  
Mohammad Ali Abdol ◽  
Sadegh Sadeghzadeh

In this paper, by employing non-equilibrium molecular dynamics simulations (NEMD), the thermal conductance of hybrid formed by polyaniline (C3N) and boron carbide (BC3) in both armchair and zigzag configurations has...


1995 ◽  
Vol 407 ◽  
Author(s):  
Y. Kogure ◽  
H. Masuyama ◽  
M. Doyama

ABSTRACTMolecular dynamics simulations on the solid-liquid transition of copper crystals have been performed. The configulation and the motion of atoms are monitored by RDF. It is seen that the height of the first peak in the RDF, which located at the nearest neighbour distance, decreased drastically as the temperature is increased.


2021 ◽  
Vol 9 ◽  
Author(s):  
Hao Li ◽  
Qiancheng Rui ◽  
Xiwen Wang ◽  
Wei Yu

A non-equilibrium molecular dynamics simulation method is conducted to study the thermal conductivity (TC) of silicon nanowires (SiNWs) with different types of defects. The impacts of defect position, porosity, temperature, and length on the TC of SiNWs are analyzed. The numerical results indicate that SiNWs with surface defects have higher TC than SiNWs with inner defects, the TC of SiNWs gradually decreases with the increase of porosity and temperature, and the impact of temperature on the TC of SiNWs with defects is weaker than the impact on the TC of SiNWs with no defects. The TC of SiNWs increases as their length increases. SiNWs with no defects have the highest corresponding frequency of low-frequency peaks of phonon density of states; however, when SiNWs have inner defects, the lowest frequency is observed. Under the same porosity, the average phonon participation of SiNWs with surface defects is higher than that of SiNWs with inner defects.


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