Experimental Characterization of the Vertical and Lateral Heat Transfer in 3D-SIC Packages

Author(s):  
Herman Oprins ◽  
Vladimir Cherman ◽  
Geert Van der Plas ◽  
Joeri De Vos ◽  
Eric Beyne

In this paper, we present the experimental characterization of 3D packages using a dedicated stackable test chip. An advanced CMOS test chip with programmable power distribution has been designed, fabricated, stacked and packaged in molded and bare die 3D packages. The packages have been experimentally characterized in test sockets with and without cooling, and soldered to the PCB. Using uniform and localized hot spot power distribution, the thermal self-heating and thermal coupling resistance and the lateral spreading in the 3D packages have been studied. Furthermore, the measurements have been used to characterize the thermal properties of the epoxy mold compound and the die-die interface and to calibrate a thermal model for the calculation of equivalent properties of underfilled μbump arrays. This model has been applied to study the trade-off between the stand-off height reduction and the underfill thermal conductivity increase in order to reduce the inter die thermal resistance.

2016 ◽  
Vol 138 (1) ◽  
Author(s):  
Herman Oprins ◽  
Vladimir Cherman ◽  
Geert Van der Plas ◽  
Joeri De Vos ◽  
Eric Beyne

In this paper, we present the experimental characterization of three-dimensional (3D) packages using a dedicated stackable test chip. An advanced complementary metal oxide silicon (CMOS) test chip with programmable power distribution has been designed, fabricated, stacked, and packaged in molded and bare die 3D packages. The packages have been experimentally characterized in test sockets with and without cooling and soldered to the printed circuit board (PCB). Using uniform and localized hot spot power distribution, the thermal self-heating and thermal coupling resistance and the lateral spreading in the 3D packages have been studied. Furthermore, the measurements have been used to characterize the thermal properties of the die–die interface and to calibrate a thermal model for the calculation of equivalent properties of underfilled μbump arrays. This model has been applied to study the tradeoff between the standoff height reduction and the underfill thermal conductivity increase in order to reduce the interdie thermal resistance.


Author(s):  
Yan Zhang ◽  
Gehong Zeng ◽  
Christine Hoffman ◽  
Ali Shakouri ◽  
Peng Wang ◽  
...  

In this paper we describe the experimental results of Si/SiGe superlattice microcoolers, which are used to cool the target hot spot on a 65μm-thick silicon substrate. The device areas under test range from 50×50 to 150×150 μm2. We measured the cooling temperature at the hot spot region versus the current supplied to the microcooler, as well as the thermal resistance, and the cooling power density (CPD, also defined as heat flux — the flow of heat per unit area in W/cm2) of these devices. The experimental results show the maximum cooling at the hot spot region approaches 1°C for device area 150×150μm2 at 80°C, and CPD up to ∼110W/cm2 for device area 50×50×2 μm2 (two 50×50μm2 device array, as illustrated in Figure 3) at 80°C. The two-chip bonded configuration will allow the integration of spot coolers and integrated circuit chips with minimum impact on the processing of microelectronic devices. Key parameters limiting the cooling performance at the hot spots are also discussed.


2002 ◽  
Vol 716 ◽  
Author(s):  
C. L. Gan ◽  
C. V. Thompson ◽  
K. L. Pey ◽  
W. K. Choi ◽  
F. Wei ◽  
...  

AbstractElectromigration experiments have been carried out on simple Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of the line. As with Al-based interconnects, the reliability of a segment in this tree strongly depends on the stress conditions of the connected segment. Beyond this, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are thought to be associated with variations in the architectural schemes of the two metallizations. The absence of a conducting electromigrationresistant overlayer in Cu technology, and the possibility of liner rupture at stressed vias lead to significant differences in tree reliabilities in Cu compared to Al.


1982 ◽  
Vol 10 (1) ◽  
pp. 37-54 ◽  
Author(s):  
M. Kumar ◽  
C. W. Bert

Abstract Unidirectional cord-rubber specimens in the form of tensile coupons and sandwich beams were used. Using specimens with the cords oriented at 0°, 45°, and 90° to the loading direction and appropriate data reduction, we were able to obtain complete characterization for the in-plane stress-strain response of single-ply, unidirectional cord-rubber composites. All strains were measured by means of liquid mercury strain gages, for which the nonlinear strain response characteristic was obtained by calibration. Stress-strain data were obtained for the cases of both cord tension and cord compression. Materials investigated were aramid-rubber, polyester-rubber, and steel-rubber.


AIAA Journal ◽  
2002 ◽  
Vol 40 ◽  
pp. 16-25
Author(s):  
J. P. Wojno ◽  
T. J. Mueller ◽  
W. K. Blake

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