Temperature and Active Layer Thickness Dependent Stability of On-Plastic a-Si:H Thin Film Transistors Fabricated at 150°C

2008 ◽  
Author(s):  
Jian-Zhang Chen ◽  
I-Chun Cheng
Keyword(s):  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Temperature Dependent ◽  
Current Ratio ◽  
Humidity Change ◽  
Order Of Magnitude ◽  
Polyimide Foil ◽  
The Stability

Stability is an important issue for the application of TFTs. In this paper, we present the effects temperature, and humidity on the stability of inverted-staggered back-channel-cut a-Si:H TFTs of various active layer thicknesses. The amorphous TFTs were made at a process temperature of 150°C on 51-μm thick Kapton polyimide foil substrates. With active layer thickness of 50nm, humidity reversibly varies the characteristics of TFTs, but TFTs of active layer thickness greater than 100 nm is pretty stable to the humidity change, which is attributed to backchannel conduction. The temperature dependent stability and characteristics of 200nm active-layer thickness TFTs were analyzed from 20°C to 60°C. Rising temperature from 20°C to 60°C, the threshold voltage (Vt) drops about 2 volts; on-off current ratio decreases by one order of magnitude mainly due to thermally excited carriers [1].

Temperature and humidity effects on the stability of on-plastic a-Si:H thin film transistors with various conduction channel layer thicknesses

2008 ◽  
Vol 1066 ◽  
Author(s):  
Jian Z Chen ◽  
I-Chun Cheng
Keyword(s):  
Layer Thickness ◽  
Temperature Dependent ◽  
Current Ratio ◽  
Humidity Effects ◽  
Channel Layer ◽  
Humidity Change ◽  
Conduction Channel ◽  
Order Of Magnitude ◽  
The Stability ◽  
Conduction Layer

ABSTRACTStability is an important issue for the application of TFTs. In this paper, we present the effects of humidity and temperature on the stability of inverted-staggered back-channel-cut a-Si:H TFTs with various conduction channel layer thickness. We evaluated the stability of on-plastic TFTs of different conduction layer thicknesses made at a process temperature of 150°C on 51-μm thick Kapton polyimide foil substrates.. With conduction channel layer thickness of 50nm, humidity reversibly varies the characteristics of TFTs, but TFTs of conduction layer thickness greater than 100 nm is pretty immune to the humidity change. The temperature dependent stability and characteristics of TFTs were analyzed from 20°C to 60°C. Rising temperature from 20°C to 56°C, the threshold voltage (Vt) drops about 2 volts; on-off current ratio decreases by one order of magnitude mainly due to thermally excited carriers in the off-region.

Active-layer Thickness Effects Related to the Threshold Voltage and Mobility Degradation in Poly-crystalline ZnO Thin-Film Transistors

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1307-1311 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
Jeong-Gyu Park ◽  
Seung-Dong Yang ◽  
Ho-Jin Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Zno Thin Film ◽  
Mobility Degradation

The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility

2012 ◽  
Vol 100 (17) ◽  
pp. 173501 ◽  
Author(s):  
Hyun-Sik Choi ◽  
Sanghun Jeon ◽  
Hojung Kim ◽  
Jaikwang Shin ◽  
Changjung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
High Mobility ◽  
Active Layer Thickness ◽  
Frequency Noise ◽  
Noise Characteristics ◽  
The Impact
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