Loading Rate Effect on the Domain Switching of Ferroelectric Materials

2008 ◽  
Author(s):  
Ajit Achuthan ◽  
Chin-Teh Sun
Keyword(s):  
Electric Field ◽  
Loading Rate ◽  
Domain Switching ◽  
Underlying Mechanism ◽  
Ferroelectric Materials ◽  
Switching Behavior ◽  
Switching Mechanism ◽  
Two Factors ◽  
Different Characteristics ◽  
Butterfly Behavior

A method to characterize the strain electric field butterfly behavior based on the underlying domain switching mechanism is presented at first. The effect of loading rate on the different characteristics of the strain electric-field-butterfly behavior is then studied. By comparing the changes in these characteristics under different loading rates, it is established that the loading rate dependence of the strain electric field butterfly behavior is mainly due to two factors, 1) the dependence of the switching of individual domains on the magnitude and duration of the loading time and 2) the variation of the transition electric field with the loading rate. Several interesting attributes of the domain switching behavior that may shed light on understanding the underlying mechanism of domain switching further is illustrated in the present study. The present study also demonstrates that the method of characterizing the strain electric butterfly based on the underlying domain switching mechanism is very effective in studying ferroelectric behavior under different loading conditions.

Анализ вычислительных и экспериментальных исследований переключения поляризации в ПВДФ и П (ВДФ-ТрФЭ) сегнетоэлектрических пленках на наноуровне

2015 ◽  
Vol 10 (2) ◽  
pp. 372-386 ◽  
Author(s):  
В.С. Быстров ◽  
V.S. Bystrov
Keyword(s):  
Experimental Data ◽  
Molecular Dynamics ◽  
Electric Field ◽  
Quantum Chemical ◽  
Polyvinylidene Fluoride ◽  
Domain Switching ◽  
Polarization Switching ◽  
Molecular Structures ◽  
Switching Mechanism ◽  
Semi Empirical

In this paper, molecular models are used to investigate and analyze the polarization switching in the polyvinylidene fluoride (PVDF) and poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) Langmuir-Blodgett (LB) nanofilms, in comparison with the experimental data at the nanoscale. Quantum-mechanical calculations and modeling, as well as molecular dynamics (MD) simulations based on semi-empirical quantum-chemical methods (such as PM3), show that the energy of the studied PVDF and P (VDF-TrFE) molecular structures, and their polarization switching proceed by the intrinsic homogeneous switching mechanism in the framework of the phenomenological theory of Landau-Ginzburg-Devonshire (LGD) in the linear approximation at low values of the electric field. The magnitude of the resulting critical coercive field is within the EC ~ 0.5 ... 2.5 GV/m, which is consistent with experimental data. It is also found that the uniform polarization switching mechanism of the polymer chains PVDF and P (VDF-TrFE) is due to the quantum properties of the molecular orbitals of the electron subsystem. This is clearly seen in both the polarization hysteresis loops, and the total energy changes. In this case, the turnover chain time, obtained by molecular dynamics within semi-empirical quantum-chemical PM3 approach in a limited Hartree-Fock approximation, when approaching this critical point, increases sharply, tending to infinity, which corresponds to the theory of LGD. Otherwise, at the high values of the applied electric field the polarization switching correspond to the extrinsic domain mechanism in the frame of the microscopic Kolmogorov–Avrami–Ishibashi (KAI) theory, describing bulk ferroelectric crystals and thick films. The performed analysis of computational and experimental data allows us to estimate the critical sizes of the possible transition region approximately on the order of 10 nm between intrinsic homogeneous and extrinsic domain switching mechanisms.

scholarly journals Phase fragility and mechatronic reliability for Pb(Mg1/3Nb2/3)O3–PbTiO3 ferroelectric single crystals — A review

2014 ◽  
Vol 04 (01) ◽  
pp. 1430001 ◽  
Author(s):  
F. Fang ◽  
W. Yang
Keyword(s):  
Fatigue Crack ◽  
Electric Field ◽  
Crack Propagation ◽  
Single Crystals ◽  
Fatigue Crack Propagation ◽  
Failure Modes ◽  
Ultrasonic Transducer ◽  
Underlying Mechanism ◽  
Ferroelectric Materials ◽  
Domain Structures

Single crystals of (1-x) Pb ( Mg 1/3 Nb 2/3) O 3–x PbTiO 3( PMN –x PT ) near their morphotropic phase boundaries (MPBs) are under extensive investigations for their extraordinary high dielectric and piezoelectric behavior. Applications of those single crystals facilitated the breakthrough in ultrasonic transducer materials and devices. Ferroelectric materials are known to be fragile which often leads to various reliability failures in applications involving electric loadings. In a mechanical sense, the failure modes concern the fracture under an intensive electric field, and the fatigue crack propagation under an alternating electric field. In an electrical sense, the failure is exhibited by degenerated hysteresis loop by shrinking the remnant polarization and expanding the coercive field. All these modes degrade the performance for ferroelectric devices. As a departure from the tetragonal (T) ferroelectric materials, exemplified by BaTiO 3 and Pb ( ZrTi ) O 3, the domain structures of PMN–PT around the MPB are versatile and intricate, depending sensitively on the composition variation, orientation and previous loading history. In this review, the attention is mainly focused on three aspects. First, the phase fragility and multiphase coexistence are presented for both [100]- and [101]-oriented PMN–PT single crystals. Second, investigations on electric field-induced fatigue crack propagation are described, along with the orientation effect on the crack propagation behavior. Third, the inverse effects of the phase transition and fatigue crack growth on the polarization behavior, or the interaction between the mechanical and electrical degradations will be elucidated. The review aims for better understanding the underlying mechanism for the ultrahigh performance of the PMN–PT single crystals, to bridge the studies of ferroelectric materials from the mechanical and electrical senses, as well as to evaluate the reliability of PMN–PT single crystals under device applications.

Reversible Electrical Resistance Switching in GeSbTe Thin Films: An Electrolytic Approach without Amorphous-Crystalline Phase-Change

2008 ◽  
Vol 1071 ◽  
Author(s):  
Ramanathaswamy Pandian ◽  
Bart J. Kooi ◽  
George Palasantzas ◽  
Jeff Th. M. De Hosson
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Phase Change ◽  
Crystalline Phase ◽  
Electrical Resistance ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Conductive Atomic Force Microscopy ◽  
Switching Mechanism ◽  
Starting Point

AbstractBesides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named ‘polarity-dependent resistance (PDR) switching’. The electrical resistance of the film switches between a low- and high-state when the polarity of the applied electric field is reversed. This switching is not connected to the phase-change, as it only occurs in the crystalline phase of the film, but connected to the solid-state electrolytic behavior i.e. high ionic conductivity of (Sb-rich) GeSbTe under an electric field. I-V characteristics of nonoptimized capacitor-like prototype cells of various dimensions clearly exhibited the switching behavior when sweeping the voltage between +1 V and -1 V (starting point: 0 V). The switching was demonstrated also with voltage pulses of amplitudes down to 1 V and pulse widths down to 1 microsecond for several hundred of cycles with resistance contrasts up to 150 % between the resistance states. Conductive atomic force microscopy (CAFM) was used to examine PDR switching at nanoscales in tip-written crystalline marks, where the switching occurred for less than 1.5 V with more than three orders of resistance contrasts. Our experiments demonstrated a novel and technologically important switching mechanism, which consumes less power than the usual phase-change switching and provide opportunity to bring together the two resistance switching types (phase-change and PDR) in a single system to extend the applicability of GeSbTe materials.

Multiscale simulation of domain switching behavior in polycrystalline ferroelectric materials

2015 ◽  
Vol 106 ◽  
pp. 100-110 ◽  
Author(s):  
Yasutomo Uetsuji ◽  
Tetsuya Hata ◽  
Tatsuya Oka ◽  
Hiroyuki Kuramae ◽  
Kazuyoshi Tsuchiya
Keyword(s):  
Domain Switching ◽  
Multiscale Simulation ◽  
Ferroelectric Materials ◽  
Switching Behavior

Contribution of piezoelectric effect, electrostriction and ferroelectric/ferroelastic switching to strain-electric field response of dielectrics

2013 ◽  
Vol 03 (01) ◽  
pp. 1350007 ◽  
Author(s):  
G. Viola ◽  
T. Saunders ◽  
X. Wei ◽  
K. B. Chong ◽  
H. Luo ◽  
...  
Keyword(s):  
Electric Field ◽  
Domain Switching ◽  
Piezoelectric Effect ◽  
Polarization State ◽  
Ferroelectric Materials ◽  
Experimental Methodology ◽  
Electrical Loading ◽  
Alternating Electric Field ◽  
Dielectric Ceramics ◽  
Electric Field Induced Strain

This paper presents a thorough study of the strain response of different types of electroceramics during dynamical electrical loading. It highlights important aspects to take into account in the experimental methodology and outlines general guidelines for the discussion and interpretation of the results. The contributions of piezoelectric effect, electrostriction and ferroelectric/ferroelastic domain switching to the strain produced during the application of an alternating electric field are discussed by describing the strain-electric field (S-E) loops of different dielectric ceramics in which each of these contributions are predominant. In particular, attention is given to the description of the strain evolution in the characteristic "butterfly loops" typically shown by ferroelectric materials. The strain-polarization loop is indicated as a useful means to reveal the interconnection between strain and polarization state during dynamical electrical loading. Strain rate is suggested as a powerful tool to obtain more detailed information regarding the mechanisms of the electric field-induced strain.

Electric-Field-Induced Domain Switching and Domain Texture Relaxations in Bulk Bismuth Ferrite

2015 ◽  
Vol 98 (12) ◽  
pp. 3884-3890 ◽  
Author(s):  
Neamul H. Khansur ◽  
Tadej Rojac ◽  
Dragan Damjanovic ◽  
Christina Reinhard ◽  
Kyle G. Webber ◽  
...  
Keyword(s):  
Electric Field ◽  
Domain Switching ◽  
Bismuth Ferrite
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