scholarly journals Combination of Nanomaterials and Organic Semiconductors for Electronic and Optoelectronic Device Fabrication

Author(s):  
Ricardo Izquierdo
1988 ◽  
Vol 144 ◽  
Author(s):  
Adam J. Carter ◽  
Ben Thomas ◽  
David V. Morgan ◽  
Jyoti K. Bhardwaj

ABSTRACTPlasma etching of GaAs and InP using a CH4/H2 process gas and AlxGa1−xAs using a SiCl4 plasma are reported. Particular attention to etching characteristics as a function of gas and material composition, r.f. power, pressure and temperature are shown. Etching of GaAs and InP highlight two separate etching mechanisms. Surface roughness data at the etched surface is presented and Cl and CH4/H2 process chemistries are compared which shows the latter to yield significant improvements in etch surface characteristics.


2001 ◽  
Vol 57-58 ◽  
pp. 891-896 ◽  
Author(s):  
S. Rennon ◽  
L. Bach ◽  
H. König ◽  
J.P. Reithmaier ◽  
A. Forchel ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
J. W. Lee ◽  
K. Eom ◽  
T. R. Paudel ◽  
B. Wang ◽  
H. Lu ◽  
...  

AbstractThe control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO3 thin films. Theoretical calculations predict the key role of the BaTiO3/PrScO3$${({{{{{\boldsymbol{110}}}}}})}_{{{{{{\bf{O}}}}}}}$$ ( 110 ) O substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.


2020 ◽  
Vol 20 (2) ◽  
pp. 765-776 ◽  
Author(s):  
Basudeb Dutta ◽  
Abhijit Hazra ◽  
Arka Dey ◽  
Chittaranjan Sinha ◽  
Partha Pratim Ray ◽  
...  

2005 ◽  
Author(s):  
Yi Gan ◽  
Jun Zhang ◽  
Shan Jiang ◽  
Xiaodong Huang ◽  
Ning Zhou ◽  
...  

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ali Uğur ◽  
Arife Gencer Imer ◽  
Esra Kaya ◽  
Yaşar Karataş ◽  
Mehmet Gülcan

Abstract In the present work, MIL-101 nanoparticles (nano-MIL-101(Cr)) metal–organic framework (MOF) structure was synthesized by hydrothermal method, and characterized via Fourier transform infrared, X-ray diffraction, and scanning electron microscopy techniques. The optoelectronic application of MOFs was investigated for the first time. For this purpose, the dye-sensitized solar cells (DSSCs) consisting of the synthesized nano-MIL-101(Cr) impregnated photoanode (PA) was fabricated, and photovoltaic, photoelectric properties of them were investigated under different illumination intensities, and the obtained results were compared with reference one. The DSSC fabricated by impregnated PA showed better photovoltaic properties than reference one. It is obtained the power conversion efficiency (PCE) of about 0.828 and fill factor (ff) of 0.656 for the fabricated DSSC based on nano-MIL-101(Cr) impregnated PA under illumination power of 100 mW/cm2 by AM1.5 G solar simulator. For the reference DSSC, PCE, and ff is about 0.468 and 0.28, respectively. The PCE of the fabricated device based on nano-MIL-101(Cr) is ∼77% greater than the reference one. The improvement in the efficiency is because of good electrocatalytic activity, large pores, and high surface area of nano-MIL-101(Cr). The nano-MIL-101(Cr) can be used in organo-optoelectronic device fabrication to obtain better performance.


Author(s):  
V. Manikandan ◽  
R. Marnadu ◽  
J. Chandrasekaran ◽  
S. Vigneselvan ◽  
R. S. Mane ◽  
...  

An ultrahigh photosensitive diode was developed using a Cu-doped CeO2 thin film through spray pyrolysis processing, which has made a unique contribution in the field of optoelectronic device fabrication process.


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