Inherent characteristics of ultra-photosensitive Al/Cu–CeO2/p-Si metal oxide semiconductor diodes

2022 ◽  
Author(s):  
V. Manikandan ◽  
R. Marnadu ◽  
J. Chandrasekaran ◽  
S. Vigneselvan ◽  
R. S. Mane ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Spray Pyrolysis ◽  
Optoelectronic Device ◽  
Metal Oxide Semiconductor ◽  
Device Fabrication ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Unique Contribution

An ultrahigh photosensitive diode was developed using a Cu-doped CeO2 thin film through spray pyrolysis processing, which has made a unique contribution in the field of optoelectronic device fabrication process.

Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based onP-/P-Thin-Film Epitaxial Silicon Wafers

1997 ◽  
Vol 36 (Part 1, No. 5A) ◽  
pp. 2565-2570 ◽  
Author(s):  
Hirofumi Shimizu ◽  
Yuji Sugino ◽  
Norio Suzuki ◽  
Shogo Kiyota ◽  
Koichi Nagasawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Silicon Wafers ◽  
Oxide Semiconductor ◽  
Epitaxial Silicon ◽  
Gate Oxide Integrity

Metal-oxide–semiconductor characteristics of thermally grown nitrided SiO2 thin film on 4H-SiC in various N2O ambient

2010 ◽  
Vol 518 (12) ◽  
pp. 3255-3259 ◽  
Author(s):  
Kuan Yew Cheong ◽  
JeongHyun Moon ◽  
Hyeong Joon Kim ◽  
Wook Bahng ◽  
Nam-Kyun Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Sio2 Thin Film ◽  
Thermally Grown
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