Surface analysis by secondary-ion mass spectroscopy during etching with gas-cluster ion beam

2003 ◽  
Vol 21 (1) ◽  
pp. 47-58 ◽  
Author(s):  
D. B. Fenner ◽  
Y. Shao
Keyword(s):  
Surface Analysis ◽  
Mass Spectroscopy ◽  
Ion Beam ◽  
Secondary Ion Mass Spectroscopy ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Secondary Ion

Time-of-flight secondary ion mass spectroscopy for surface analysis of insulators using a cluster ion beam

2003 ◽  
Vol 83 (23) ◽  
pp. 4872-4874 ◽  
Author(s):  
K. Hirata ◽  
Y. Saitoh ◽  
A. Chiba ◽  
K. Narumi ◽  
Y. Kobayashi ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Mass Spectroscopy ◽  
Ion Beam ◽  
Time Of Flight ◽  
Secondary Ion Mass Spectroscopy ◽  
Cluster Ion ◽  
Secondary Ion

Improvement of the gas cluster ion beam-(GCIB)-based molecular secondary ion mass spectroscopy (SIMS) depth profile with O2+ cosputtering

The Analyst ◽  
2016 ◽  
Vol 141 (8) ◽  
pp. 2523-2533 ◽  
Author(s):  
Yi-Hsuan Chu ◽  
Hua-Yang Liao ◽  
Kang-Yi Lin ◽  
Hsun-Yun Chang ◽  
Wei-Lun Kao ◽  
...  
Keyword(s):  
Steady State ◽  
Depth Profile ◽  
Mass Spectroscopy ◽  
Ion Beam ◽  
Depth Profiles ◽  
Tof Sims ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Secondary Ion ◽  
Sims Depth Profile

The Ar2500+ and O2+ cosputter in ToF-SIMS depth profiles retained >95% molecular ion intensity in the steady-state.

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