Physical and electrical properties of metal gate electrodes on HfO[sub 2] gate dielectrics

2003 ◽  
Vol 21 (1) ◽  
pp. 11 ◽  
Author(s):  
J. K. Schaeffer ◽  
S. B. Samavedam ◽  
D. C. Gilmer ◽  
V. Dhandapani ◽  
P. J. Tobin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes

Influence of Metal Gate Electrodes on Electrical Properties of Atomic-Layer-Deposited Al-Rich HfAlO/Ga2O3 MOSCAPs

2020 ◽  
Vol 67 (4) ◽  
pp. 1730-1736
Author(s):  
Hongpeng Zhang ◽  
Lei Yuan ◽  
Xiaoyan Tang ◽  
Jichao Hu ◽  
Jianwu Sun ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes

On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics

2007 ◽  
Vol 102 (7) ◽  
pp. 074511 ◽  
Author(s):  
J. K. Schaeffer ◽  
D. C. Gilmer ◽  
S. Samavedam ◽  
M. Raymond ◽  
A. Haggag ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
High Permittivity ◽  
Gate Electrodes

Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress

2006 ◽  
Vol 46 (1) ◽  
pp. 69-76 ◽  
Author(s):  
S. Chatterjee ◽  
Y. Kuo ◽  
J. Lu ◽  
J.-Y. Tewg ◽  
P. Majhi
Keyword(s):  
Gate Dielectrics ◽  
Constant Voltage ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
High K ◽  
Voltage Stress ◽  
Electrical Reliability

Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2259-2262 ◽  
Author(s):  
G. Lucovsky ◽  
J.L. Whitten
Keyword(s):  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
High K

Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology

2005 ◽  
Vol 80 ◽  
pp. 1-6 ◽  
Author(s):  
Robert Chau ◽  
Justin Brask ◽  
Suman Datta ◽  
Gilbert Dewey ◽  
Mark Doczy ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes

A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme

2012 ◽  
Vol 187 ◽  
pp. 57-60 ◽  
Author(s):  
Guang Yaw Hwang ◽  
J.H. Liao ◽  
S.F. Tzou ◽  
Mark Lin ◽  
Autumn Yeh ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Gate Dielectrics ◽  
Semiconductor Industry ◽  
Wet Etching ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Current ◽  
Gate Electrodes ◽  
Polysilicon Gate ◽  
High K

Beginning at the 45nm node, the semiconductor industry is moving to high-k gate dielectrics and metal gate electrodes for CMOS logic devices [. Although different approaches of building these devices are being pursued, most of the industry has consolidated behind a gate last approach, in which the transistor is built around a dummy poly polysilicon gate, which is subsequently removed and replaced with a metal gate. Current approaches to removing the dummy poly gate include plasma-based dry processes and liquid-phase wet etching.

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

1999 ◽  
Vol 46 (7) ◽  
pp. 1537-1544 ◽  
Author(s):  
B. Cheng ◽  
M. Cao ◽  
R. Rao ◽  
A. Inani ◽  
P. Vande Voorde ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
The Impact

Impact of Galvanic Corrosion on Metal Gate Stacks

2009 ◽  
Vol 145-146 ◽  
pp. 215-218
Author(s):  
Masayuki Wada ◽  
Sylvain Garaud ◽  
I. Ferain ◽  
Nadine Collaert ◽  
Kenichi Sano ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Galvanic Corrosion ◽  
Gate Stacks ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Fermi Level Pinning ◽  
Gate Electrodes ◽  
High K ◽  
Work Functions

High-k gate dielectrics (HK), such as HfO2 or HfSiON, are being considered as the gate dielectric option for the 45nm node and beyond. In order to alleviate the Fermi-level pinning issue and to enhance the CET (Capacitive Effective Thickness) by generating the depletion layer in poly-Silicon gate, metal gate electrodes with proper work functions (WF) have to be used on the high-k dielectrics.

scholarly journals Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks

2019 ◽  
Vol 214 ◽  
pp. 87-92 ◽  
Author(s):  
T.-E. Lee ◽  
K. Kato ◽  
M. Ke ◽  
K. Toprasertpong ◽  
M. Takenaka ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Stacks ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes
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