Energy band gaps of InN containing oxygen and of the In[sub x]Al[sub 1−x]N interface layer formed during InN film growth

AbstractCaF2 films with thicknesses in the monolayer range (<20 Å) were grown on Si(111) by evaporation from a CaF2 source at UHV conditions. They were characterized ex-situ by Heavy-Ion Elastic Recoil Detection Analysis (HI-ERDA), RBS/Channeling, X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM). The F/Ca ratio of the films was found to depend on the growth temperature Ts and to deviate appreciably from the stoichiometric composition (F/Ca=2). Due to an interface reaction which leads to a CaF-interface layer a change from polycrystalline to epitaxial growth occurs at Ts=450°C. At higher temperature film growth started with a closed layer of CaF on top of which CaF2 layers with an increasing fraction of pinholes were formed. By means of a two-step process at different temperatures, the amount of pinholes could be strongly reduced. It was found, that buffer layers of CaF2 with a CaF interface layer introduced in Au/p-Si contacts enhance the barrier height by as much as 0.36eV to values of 0.64eV.

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Composition behaviour of energy band gaps in the alloy AlxGayIn1–x–ySbzAs1–z

The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics ◽

10.1080/14786435.2014.949325 ◽

2014 ◽

Vol 94 (27) ◽

pp. 3088-3097 ◽

Cited By ~ 1

Author(s):

Kyurhee Shim

Keyword(s):

Energy Band ◽

Band Gaps

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High-rate a-Si:H and μc-Si:H Film Growth Studied by Advanced Plasma and in situ Film Diagnostics

MRS Proceedings ◽

10.1557/proc-715-a25.6 ◽

2002 ◽

Vol 715 ◽

Cited By ~ 1

Author(s):

W.M.M. Kessels ◽

P.J. van den Oever ◽

J.P.M. Hoefnagels ◽

J. Hong ◽

I.J. Houston ◽

...

Keyword(s):

Film Growth ◽

Film Studies ◽

Interface Layer ◽

Surface Reactivity ◽

Attenuated Total Reflection ◽

High Rate ◽

High Deposition Rate ◽

Basic Insight ◽

Insight Into

AbstractPlasma and in situ film studies have been applied to the expanding thermal plasma to obtain basic insight into the deposition of a-Si:H and μc-Si:H at high rates (> 10 Å/s). A study of the density of plasma radicals (Si, SiH, SiH3) and of the radicals' surface reactivity has revealed that SiH3 is the most important radical for the growth of both materials. In situ attenuated total reflection infrared spectroscopy and spectroscopic ellipsometry have revealed a thick interface layer and consequently long incubation time for the materials deposited at a high deposition rate.

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Retarded Growth of Sputtered HfO2 Films on Germanium

MRS Proceedings ◽

10.1557/proc-811-d5.5/b5.5 ◽

2004 ◽

Vol 811 ◽

Author(s):

Koji Kita ◽

Masashi Sasagawa ◽

Masahiro Toyama ◽

Kentaro Kyuno ◽

Akira Toriumi

Keyword(s):

Film Growth ◽

Early Stage ◽

Gate Oxide ◽

Interface Layer ◽

Film Deposition ◽

Si Substrate ◽

Equivalent Thickness ◽

Ternary Compounds ◽

Si Substrates

ABSTRACTHfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

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