Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor

2020 ◽  
Vol 46 (8) ◽  
pp. 10121-10129
Author(s):  
Jae-Hwan Kim ◽  
Tran Thi Ngoc Van ◽  
Jiwon Oh ◽  
Seung-Muk Bae ◽  
Sang Ick Lee ◽  
...  
2009 ◽  
Vol 156 (8) ◽  
pp. G89 ◽  
Author(s):  
Jian Liu ◽  
William N. Lennard ◽  
Lyudmila V. Goncharova ◽  
Dolf Landheer ◽  
Xiaohua Wu ◽  
...  

2004 ◽  
Vol 22 (4) ◽  
pp. 1175-1181 ◽  
Author(s):  
Yoshihide Senzaki ◽  
Seung Park ◽  
Hood Chatham ◽  
Lawrence Bartholomew ◽  
Wesley Nieveen

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.


2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document