Removal of chemical–mechanical polishing-induced damage layer in single crystal La[sub 3]Ga[sub 5]SiO[sub 14] by inductively coupled plasma etching
2005 ◽
Vol 23
(5)
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pp. 2236
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pp. 015016
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Vol 39
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pp. 2831-2838
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Vol 355
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2017 ◽
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Vol 34
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pp. 740-745
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