Structural and electrical properties of TixAl1−xOy thin films grown by atomic layer deposition

Author(s):  
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A. A. Chouprik ◽  
S. A. Gudkova ◽  
A. M. Markeev ◽  
Yu. Yu. Lebedinskii ◽  
...  
2012 ◽  
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Yu-Ri Shin ◽  
Won-Sub Kwack ◽  
Yun Chang Park ◽  
Jin-Hyock Kim ◽  
Seung-Yong Shin ◽  
...  

2018 ◽  
Vol 53 (21) ◽  
pp. 15237-15245 ◽  
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Bo-Eun Park ◽  
Yujin Lee ◽  
Il-Kwon Oh ◽  
Wontae Noh ◽  
Satoko Gatineau ◽  
...  

2019 ◽  
Vol 97 ◽  
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Emanuela Schilirò ◽  
Filippo Giannazzo ◽  
Corrado Bongiorno ◽  
Salvatore Di Franco ◽  
Giuseppe Greco ◽  
...  

2002 ◽  
Vol 193 (1-4) ◽  
pp. 120-128 ◽  
Author(s):  
Michel Cassir ◽  
Fabrice Goubin ◽  
Cécile Bernay ◽  
Philippe Vernoux ◽  
Daniel Lincot

2001 ◽  
Vol 685 ◽  
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Won-Jae Lee ◽  
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In-Kyu You ◽  
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AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.


2011 ◽  
Vol 14 (10) ◽  
pp. G45 ◽  
Author(s):  
C. J. Yim ◽  
S. U. Kim ◽  
Y. S. Kang ◽  
M.-H. Cho ◽  
D.-H. Ko

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