Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology
2013 ◽
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pp. 01A134
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2020 ◽
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2019 ◽
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pp. 060903
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Keyword(s):
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pp. 050903
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pp. 1900127
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Vol 51
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pp. 8147-8151
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Vol 40
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pp. 1668-1673
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