Low resistivity CdS thin films grown by flash‐evaporation at low substrate temperature (150–200 °C)

1984 ◽  
Vol 2 (1) ◽  
pp. 9-10 ◽  
Author(s):  
V. Canevari ◽  
N. Romeo ◽  
G. Sberveglieri ◽  
S. Azzi ◽  
A. Tosi ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Flash Evaporation ◽  
Low Resistivity ◽  
Cds Thin Films

Thermally evaporated CdS thin films for CdS/CdTe solar cells: Effect of substrate temperature on CdS layer

2021 ◽  
Vol 273 ◽  
pp. 115406
Author(s):  
A.A.I. Lakmal ◽  
R.K.K.G.R.G. Kumarasinghe ◽  
V.A. Seneviratne ◽  
Jiann-Yeu Chen ◽  
Jenn-Ming Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Substrate Temperature ◽  
Cdte Solar Cells ◽  
Cds Thin Films

Pulsed Laser Deposition of Low-Resistivity Indium Tin Oxide Thin Films at Low Substrate Temperature

1999 ◽  
Vol 38 (Part 1, No. 5A) ◽  
pp. 2710-2716 ◽  
Author(s):  
Frederick Ojo Adurodija ◽  
Hirokazu Izumi ◽  
Tsuguo Ishihara ◽  
Hideki Yoshioka ◽  
Hiroshi Matsui ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Low Resistivity

Low resistivity CdS thin films grown by r.f. sputtering in an Ar-H2 atmosphere

Solar Cells ◽  
1987 ◽  
Vol 22 (1) ◽  
pp. 23-27 ◽  
Author(s):  
N. Romeo ◽  
A. Bosio ◽  
V. Canevari ◽  
D. Seuret
Keyword(s):  
Thin Films ◽  
Low Resistivity ◽  
Cds Thin Films

Highly Transparent and Low Resistivity Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition under Different Oxygen Flow Rates

2013 ◽  
Vol 662 ◽  
pp. 453-458
Author(s):  
Kyoo Ho Kim ◽  
Eun Soo Lee ◽  
Seong Heon Lee
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Flow Rate ◽  
Pulsed Laser ◽  
Oxygen Flow Rate ◽  
Laser Deposition ◽  
Oxygen Flow ◽  
Low Resistivity ◽  
Doped Zno

Polycrystalline Al-doped ZnO (AZO) thin films with a thickness of 1300 Å were grown on Corning 1737 glass by pulsed laser deposition (PLD) at a low substrate temperature. The presence of oxygen gas during deposition led to a remarkable enhancement of the (002) c-axis preferential orientation as well as increased crystallite size. Highly transparent films with a transmittance of 85% could be obtained by controlling the oxygen flow rate, while causing a Burstein-Moss shift toward a shorter wavelength as well. The resistivities of the films were found to be functions of both the oxygen flow rate and substrate temperature, with the lowest value being 2.3 x 10-4 Ωcm (18Ω/sq sheet resistance). It was found that both the oxygen flow rate and substrate temperature are crucial in order to grow superior device quality films with an appropriate degree of crystallinity, less surface roughness, high transmittance and low resistivity, which are characteristics of great technological importance.

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