Determination of the atomic nitrogen flux from a radio frequency plasma nitride source for molecular beam epitaxy systems

AbstractInN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

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RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire

MRS Proceedings ◽

10.1557/proc-831-e4.4 ◽

2004 ◽

Vol 831 ◽

Author(s):

Naoki Hashimoto ◽

Naohiro Kikukawa ◽

Song-Bek Che ◽

Yoshihiro Ishitani ◽

Akihiko Yoshikawa

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Radio Frequency ◽

Growth Mechanism ◽

Molecular Beam ◽

Lattice Relaxation ◽

Radio Frequency Plasma ◽

Mbe Growth ◽

Frequency Plasma ◽

Nominal Coverage

ABSTRACTWe have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

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Rapid thermal annealing of GaNxAs1−x grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence

Journal of Applied Physics ◽

10.1063/1.1454193 ◽

2002 ◽

Vol 91 (8) ◽

pp. 4900-4903 ◽

Cited By ~ 47

Author(s):

W. K. Loke ◽

S. F. Yoon ◽

S. Z. Wang ◽

T. K. Ng ◽

W. J. Fan

Keyword(s):

Molecular Beam Epitaxy ◽

Radio Frequency ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Radio Frequency Plasma ◽

Frequency Plasma

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Two-Step Growth of MgO Films on Sapphire (0001) Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy

Chinese Physics Letters ◽

10.1088/0256-307x/21/2/055 ◽

2004 ◽

Vol 21 (2) ◽

pp. 410-413 ◽

Cited By ~ 5

Author(s):

Mei Zeng-Xia ◽

Du Xiao-Long ◽

Zeng Zhao-Quan ◽

Guo Yang ◽

Wang Jian ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Radio Frequency ◽

Molecular Beam ◽

Radio Frequency Plasma ◽

Frequency Plasma ◽

Step Growth

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Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.301.95 ◽

2006 ◽

Vol 301 ◽

pp. 95-98 ◽

Cited By ~ 2

Author(s):

Masashi Yamashita ◽

Yukari Ishikawa ◽

Hitoshi Ohsato ◽

Noriyoshi Shibata

Keyword(s):

Thin Film ◽

Molecular Beam Epitaxy ◽

Radio Frequency ◽

Photoelectron Spectroscopy ◽

Molecular Beam ◽

High Energy ◽

Radio Frequency Plasma ◽

Group Iii ◽

Frequency Plasma

An AlBN thin film with a boron content (B/(Al+B)) of 0.1 or 0.3 was obtained by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) using EB-guns as group-III element sources and an RF radical source for nitrogen supply. We compared the characteristics of the film with those of AlN and BN films. By reflective high-energy electron diffraction (RHEED), we observed ring patterns in the AlBN film. The X-ray photoelectron spectroscopy (XPS) N1s peak of the AlBN film was observed at a binding energy between the peaks of AlN and BN. There was no evidence for phase separation in the film.

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