scholarly journals Research of one-dimensional discrete chaotic system constructed by the hybrid circuits of single-electron transistor and metal oxide semiconductor

2012 ◽  
Vol 61 (8) ◽  
pp. 080503
Author(s):  
Feng Chao-Wen ◽  
Cai Li ◽  
Yang Xiao-Kuo ◽  
Kang Qiang ◽  
Peng Wei-Dong ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Chaotic System ◽  
Metal Oxide Semiconductor ◽  
Single Electron ◽  
Oxide Semiconductor ◽  
Single Electron Transistor ◽  
One Dimensional

Design of Quaternary Half Adder Using Hybrid SETMOS Cell

2011 ◽  
Vol 110-116 ◽  
pp. 5085-5089
Author(s):  
Khadijeh Feizi ◽  
Ali Shahhoseini
Keyword(s):  
Metal Oxide ◽  
Logic Gates ◽  
Metal Oxide Semiconductor ◽  
Single Electron ◽  
Oxide Semiconductor ◽  
Single Electron Transistor ◽  
Mos Transistor ◽  
Logic Operation ◽  
Half Adder ◽  
Arithmetic Units

Adder is one of the important arithmetic units in computers. In this paper, we investigate the implementation of quaternary half adder based on multiple-valued (MV) logic gates using single electron transistor (SET) and metal-oxide-semiconductor (MOS) transistor. We use hybrid SETMOS universal literal gate which has been proposed by Mahapatra and Ionesco. We apply two 4-radix inputs to the proposed quaternary half adder and obtain sum and carry outputs. The logic operation of the proposed quaternary half adder is verified by using HSPICE simulator. Moreover we compare the performance of our proposed quaternary half adder with the performance of a quaternary half adder based on MOS technology.

Enhancement-mode metal-oxide-semiconductor single-electron transistor on pure silicon

2006 ◽  
Vol 89 (7) ◽  
pp. 073106 ◽  
Author(s):  
G. M. Jones ◽  
B. H. Hu ◽  
C. H. Yang ◽  
M. J. Yang ◽  
Russell Hajdaj ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Single Electron ◽  
Oxide Semiconductor ◽  
Single Electron Transistor ◽  
Pure Silicon ◽  
Enhancement Mode
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