scholarly journals Real-time in situ process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N2/H2 plasma

2021 ◽  
Vol 39 (2) ◽  
pp. 022406
Author(s):  
Deepa Shukla ◽  
Adnan Mohammad ◽  
Saidjafarzoda Ilhom ◽  
Brian G. Willis ◽  
Ali Kemal Okyay ◽  
...  
2015 ◽  
Vol 3 (37) ◽  
pp. 9620-9630 ◽  
Author(s):  
Ali Haider ◽  
Seda Kizir ◽  
Cagla Ozgit-Akgun ◽  
Eda Goldenberg ◽  
Shahid Ali Leghari ◽  
...  

Hollow cathode plasma assisted atomic layer deposited InxGa1−xN alloys show successful tunability of the optical band gap by changing the In concentration in a wide range.


2015 ◽  
Vol 12 (4-5) ◽  
pp. 394-398 ◽  
Author(s):  
Cagla Ozgit-Akgun ◽  
Eda Goldenberg ◽  
Sami Bolat ◽  
Burak Tekcan ◽  
Fatma Kayaci ◽  
...  

2014 ◽  
Vol 2 (12) ◽  
pp. 2123-2136 ◽  
Author(s):  
Cagla Ozgit-Akgun ◽  
Eda Goldenberg ◽  
Ali Kemal Okyay ◽  
Necmi Biyikli

The authors report on the use of hollow cathode plasma for low-temperature plasma-assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1−xN thin films with low impurity concentrations.


2020 ◽  
Vol MA2020-02 (23) ◽  
pp. 1664-1664
Author(s):  
Adnan Mohammad ◽  
Saidjafarzoda Ilhom ◽  
Deepa Shukla ◽  
Brian Willis ◽  
Ali K. Okyay ◽  
...  

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