Real-time in situ process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N2/H2 plasma
2021 ◽
Vol 39
(2)
◽
pp. 022406
Keyword(s):
2019 ◽
Vol 37
(2)
◽
pp. 020927
◽
Keyword(s):
2021 ◽
Vol 39
(4)
◽
pp. 042403
2015 ◽
Vol 12
(4-5)
◽
pp. 394-398
◽
Keyword(s):
Keyword(s):
2014 ◽
Vol 2
(12)
◽
pp. 2123-2136
◽
2014 ◽
Vol 32
(3)
◽
pp. 031508
◽
Keyword(s):
Keyword(s):