scholarly journals Refractive index of laser active region based on InAs/InGaAs quantum dots

2013 ◽  
Vol 7 (1) ◽  
pp. 073087 ◽  
Author(s):  
Nikita Yu Gordeev ◽  
Oleg I. Rumyantsev ◽  
Ivan G. Savenko ◽  
Alexey S. Payusov ◽  
Fedor I. Zubov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Refractive Index ◽  
Active Region

scholarly journals Influence of coating layers on characteristics of microdisk lasers with InAs/InGaAs quantum dots active region

2018 ◽  
Vol 1124 ◽  
pp. 041020
Author(s):  
I Y Agafonov ◽  
N V Kryzhanovskaya ◽  
E I Moiseev ◽  
A S Dragunova ◽  
M V Fetisova ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Microdisk Lasers ◽  
Coating Layers

Effect of the shape of quantum dots on the refractive index changes

2016 ◽  
Vol 502 ◽  
pp. 146-150 ◽  
Author(s):  
Keyin Li ◽  
Kangxian Guo ◽  
Litao Liang
Keyword(s):  
Quantum Dots ◽  
Refractive Index ◽  
Index Changes

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.

2003 ◽  
Vol 794 ◽  
Author(s):  
V.M. Ustinov ◽  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
N.A. Maleev ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Quantum Wells ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Optical Loss ◽  
Threshold Current ◽  
Temperature Threshold

ABSTRACT1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%)and low internal losses (α=3–4 cm ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm (λ=1.29 micron) and 400 A/cm2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.

scholarly journals Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 124 ◽  
Author(s):  
Mourad Baira ◽  
Bassem Salem ◽  
Niyaz Madhar ◽  
Bouraoui Ilahi
Keyword(s):  
Quantum Dots ◽  
Refractive Index ◽  
Absorption Coefficient ◽  
Electron Energy ◽  
Energy State ◽  
Total Absorption ◽  
Absorption Coefficients ◽  
Third Order ◽  
Index Changes ◽  
Total Absorption Coefficient

Intersubband optical transitions, refractive index changes, and absorption coefficients are numerically driven for direct bandgap strained GeSn/Ge quantum dots. The linear, third-order nonlinear and total, absorption coefficients and refractive index changes are evaluated over useful dot sizes’ range ensuring p-like Γ-electron energy state to be lower than s-like L-electron energy state. The results show strong dependence of the total absorption coefficient and refractive index changes on the quantum dot sizes. The third order nonlinear contribution is found to be sensitive to the incident light intensity affecting both total absorption coefficient and refractive index changes, especially for larger dot sizes.

scholarly journals Modeling of the refractive index and composition of luminescent nanometric chlorinated-silicon nitride films with embedded Si-quantum dots

2016 ◽  
Vol 120 (14) ◽  
pp. 145305 ◽  
Author(s):  
A. Rodríguez-Gómez ◽  
L. Escobar-Alarcón ◽  
R. Serna ◽  
F. Cabello ◽  
E. Haro-Poniatowski ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Refractive Index ◽  
Silicon Nitride ◽  
Silicon Nitride Films ◽  
Si Quantum Dots

Enhanced Luminescence Efficiency from Hydrogel Microbead Encapsulated Quantum Dots

2006 ◽  
Vol 959 ◽  
Author(s):  
Arup Neogi ◽  
Santaneel Ghosh ◽  
Jianyou Li ◽  
Tong Cai ◽  
Zhibing Hu
Keyword(s):  
Phase Transition ◽  
Quantum Dots ◽  
Refractive Index ◽  
Optical Properties ◽  
Index Volume ◽  
Volume Density ◽  
Volume Phase Transition ◽  
Thermoresponsive Polymer ◽  
Luminescence Efficiency ◽  
Enhanced Luminescence

ABSTRACTIn this paper, a novel quantum dot (QD) based nanomaterial system is presented for efficient FRET analysis. The quantum dots have been embedded in hydrogel microspheres based on poly(N-isopropylacrylamide) (PNIPAM) a thermoresponsive polymer that undergoes a volume phase transition across the low critical solution (LCST). The optical properties of the quantum dots entrapped within the gel microspheres has been modified due to change in refractive index, volume density of the surrounding hydrogel medium. The QDs encapsulated in the PNIPAM microspheres showed 100–200 % enhancement in the PL efficiency as the microgels shrank at the temperature above the LCST temperature of the gel.

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