Synthesis technique of diamondlike carbon films by laser ablation ion source in atmosphere

1992 ◽  
Author(s):  
Kaoru Suzuki ◽  
Tetsuya Taniyama ◽  
Junji Nakata ◽  
Takaya Masutani
2010 ◽  
Vol 108 (11) ◽  
pp. 113516 ◽  
Author(s):  
A. Sikora ◽  
F. Garrelie ◽  
C. Donnet ◽  
A. S. Loir ◽  
J. Fontaine ◽  
...  

1993 ◽  
Vol 334 ◽  
Author(s):  
I.B. Graff ◽  
R.A. Pugliese ◽  
P.R. Westmoreland

AbstractMolecular-beam mass spectrometry has been used to study plasma-enhanced chemical vapor deposition (PECVD) of diamondlike carbon films. A threshold-ionization technique was used to identify and quantify species in the plasma. Mole fractions of H, H2, CH4, C2H2, C2H6 and Ar were measured in an 83.3% CH4/Ar mixture at a pressure of 0.1 torr and a total flow of 30 sccm. Comparisons were made between mole fractions measured at plasma powers of 25W and 50W. These results were compared to measured concentration profiles and to film growth rates.


2017 ◽  
Vol 743 ◽  
pp. 112-117
Author(s):  
Alexander Zolkin ◽  
Anna Semerikova ◽  
Sergey Chepkasov ◽  
Maksim Khomyakov

In the present study, the Raman spectra of diamond-like amorphous (a-C) and hydrogenated amorphous (a-C:H) carbon films on silicon obtained using the ion-beam methods and the pulse cathodic arc deposition technique were investigated with the aim of elucidating the relation between the hardness and structure of the films. The hardness of the samples used in the present study was 19 – 45 GPa. Hydrogenated carbon films were synthesized using END–Hall ion sources and a linear anode layer ion source (LIS) on single-crystal silicon substrates. The gas precursors were CH4 and C3H8, and the rate of the gas flow fed into the ion source was 4.4 to 10 sccm. The ion energies ranged from 150 to 600 eV. a-C films were deposited onto Si substrates using the pulse cathodic arc deposition technique. The films obtained by the pulse arc technique contained elements with an ordered structure. In the films synthesized using low- (150 eV) and high-energy (600 eV) ions beams, an amorphous phase was the major phase. The significant blurriness of the diffraction rings in the electron diffraction patterns due to a large film thickness (180 – 250 nm) did not allow distinctly observing the signals from the elements with an ordered structure against the background of an amorphous phase.


1992 ◽  
Author(s):  
Taras V. Kononenko ◽  
Vitali I. Konov ◽  
Victor G. Ralchenko ◽  
V. E. Strelnitsky

2017 ◽  
Vol 4 (11) ◽  
pp. 11500-11504
Author(s):  
Alexander Zolkin ◽  
Anna Semerikova ◽  
Sergey Chepkasov ◽  
Maxim Khomyakov
Keyword(s):  

2009 ◽  
Vol 48 (9) ◽  
pp. 092304 ◽  
Author(s):  
Susumu Takabayashi ◽  
Keishi Okamoto ◽  
Tatsuyuki Nakatani ◽  
Hiroyuki Sakaue ◽  
Takayuki Takahagi

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