scholarly journals Multiple scale modeling of Al2O3thin film growth in an ion beam sputtering process

2015 ◽  
Author(s):  
Marcus Turowski ◽  
Marco Jupé ◽  
Thomas Melzig ◽  
Andreas Pflug ◽  
Detlev Ristau
Keyword(s):  
Film Growth ◽  
Ion Beam ◽  
Multiple Scale ◽  
Ion Beam Sputtering ◽  
Scale Modeling ◽  
Beam Sputtering

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

La1−xBaxMnOz thin film growth by ion beam sputtering: effects of oxygen partial pressure

2001 ◽  
Vol 229 (1-4) ◽  
pp. 415-418 ◽  
Author(s):  
M. Tada ◽  
J. Yamada ◽  
V.V. Srinivasu ◽  
V. Sreedevi ◽  
H. Kohmoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

The Structure of Si and Ge Deposited by Ion Beam Sputtering

1985 ◽  
Vol 47 ◽  
Author(s):  
H. Windischmann ◽  
J. M. Cavese ◽  
R. W. Collins ◽  
R. D. Harris ◽  
J. Gonzalez-Hernandez
Keyword(s):  
Crystallization Temperature ◽  
Film Growth ◽  
Ion Beam ◽  
Operating Pressure ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Oxygen Contamination ◽  
Beam Sputtering ◽  
Silicon And Germanium ◽  
Substrate Temperatures

ABSTRACTThe crystallinity for silicon and germanium films deposited by ion beam sputtering (IBS) as a function of substrate temperatures was determined using Raman spectroscopy, spectroscopic ellipsometry, electrical conductivity and x-ray diffraction measurements. The results show that IBS silicon crystallizes between 300–350°C while germanium crystallizes between 20–200°C. Reasonably good agreement is obtained among the four distinctively different characterization techniques in identifying the onset of crystallinity. A direct relationship is observed between the substrate temperature required for crystallization and the log of the operating pressure for various deposition techniques. Energetic particle stimulation during film growth appears to reduce the crystallization temperature at a given operating pressure. Raman data show that the crystallization temperature depends on the deposition rate. A graded structure is observed in films deposited above 300°C, probably due to oxygen contamination.

Ion Beam Induced Growth Structure of Fluorite Type Oxide Films for Biaxially Textured HYSC Coated Conductors

1999 ◽  
Vol 585 ◽  
Author(s):  
Y. Iijima ◽  
M. Kimura ◽  
T. Saitoh
Keyword(s):  
Film Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Coated Conductors ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Fluorite Type ◽  
Pyrochlore Type ◽  
Oxide Crystals

AbstractBiaxially aligned film growth by dual-ion-beam sputtering methods were studied for fluorite type (Zr0.85Y0.15O1.93(YSZ), Hf0.74Yb0.26O1.87, CeO2), pyrochlore type (Zr2Sm2O7), and rare-earth C type (Y2O3, Sm2O3) oxides on polycrystalline Ni-based alloy substrates. Cubetextured (all axes aligned with a <100> axis substrate normal) films were obtained for fluorite and pyrochlore ones by low energy (<300 eV) ion bombardment at low temperatures (< 300 °C). Besides, cube textured Y2O3 films were obtained in far narrower conditions with a quite low energy (150 eV)-ion bombardment at the temperature of 300 °C. The assisting ion energy dependence was discussed in connection with lattice energies for these oxide crystals.

Stannic oxide thin film growth via ion-beam-sputtering

2014 ◽  
Vol 553 ◽  
pp. 26-29 ◽  
Author(s):  
Martin Becker ◽  
Robert Hamann ◽  
Angelika Polity ◽  
Bruno K. Meyer
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Oxide Thin Film ◽  
Stannic Oxide ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Deposition of tin oxides by Ion-Beam-Sputtering

2012 ◽  
Vol 1494 ◽  
pp. 153-158 ◽  
Author(s):  
Martin Becker ◽  
Angelika Polity ◽  
Davar Feili ◽  
Bruno K. Meyer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Tin Oxide ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Ion Beam Sputtering ◽  
Oxide Thin Films ◽  
Beam Sputtering ◽  
P Type

ABSTRACTSynthesis of both p-type and n-type oxide semiconductors is required to develop oxide-based electronic devices. Tin monoxide (SnO) recently has received increasing attention as an alternative p-type oxide semiconductor because it is a simple binary compound consisting of abundant elements. Another phase of the tin oxygen system, SnO2, is of great technological interest as transparent electrodes and as heat-reflecting filters. The preparation of tin oxide thin films has been performed by many different procedures. Radio-frequency (RF) ion-thrusters, as designed for propulsion applications, are also qualified for thin film deposition and surface etching, because different gas mixtures, extraction voltages and RF power can be applied. Tin oxide thin films were grown by ion beam sputtering (IBS) using a 3” metallic tin target. Different aspects of the thin film growth and properties of the tin oxide phases were investigated in relation to flux of oxygen fed into the gas discharge in the ion thruster. Results on thin film growth by IBS will be presented, structural, vibrational and optical properties of the films will be discussed.

Ion Beam Induced Growth Structure of Fluorite Type Oxide Films for Biaxially Textured htsc Coated Conductors

1999 ◽  
Vol 587 ◽  
Author(s):  
Y. Iijima ◽  
M. Kimura ◽  
T. Saitoh
Keyword(s):  
Film Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Coated Conductors ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Fluorite Type ◽  
Pyrochlore Type ◽  
Oxide Crystals

AbstractBiaxially aligned film growth by dual-ion-beam sputtering method were studied for fluorite type (Zr0.85Y0.15O1.93(YSZ), Hf0.74Yb0.26O1.87, CeO2), pyrochlore type (Zr2Sm2O7), and rare-earth C type (Y2O3, Sm2O3) oxides on polycrystalline Ni-based alloy substrates. Cube-textured (all axes aligned with a <100> axis substrate normal) films were obtained for fluorite and pyrochlore ones by low energy (<300 eV) ion bombardment at low temperatures (< 300 °C). Besides, cube textured Y2O3 films were obtained in far narrow conditions with a quite low energy (150 eV)-ion bombardment at the temperature of 300°C. The assisting ion energy dependence was discussed in connection with lattice energies for these oxide crystals.

Effects of O2 Ion Bombardment of Y-Ba-Cu-Oxide during Thin Film Growth

1989 ◽  
Vol 157 ◽  
Author(s):  
G. Metzger ◽  
C. B. Fleddermann
Keyword(s):  
Oxygen Content ◽  
Film Growth ◽  
Ion Beam ◽  
Optical Emission ◽  
Beam Current ◽  
Ion Beam Sputtering ◽  
Low Oxygen ◽  
Oxygen Ion ◽  
Beam Sputtering ◽  
Direct Incorporation

ABSTRACTOxygen ion beam bombardment has been studied as a means for incorporating oxygen into thin films of Y-Ba-Cu-oxide either by enhancing the transport of oxygen to substrates during ion-beam sputtering, or by direct incorporation of oxygen with ion-assisted deposition. Optical emission spectroscopy was used to study the ion-beam bombardment of bulk superconducting targets as the oxygen content of the ion beam was varied. This study showed that oxygen did not directly combine with metallic elements in the target to increase the oxygen content of the stream of particles moving toward the substrate. Addition of a second ion beam directing oxygen ions toward the substrate during film growth caused large variations in the stoichiometry of the deposited films. At low oxygen ion currents, no increase in the oxygen content of the films was detected, while at relatively high currents, the oxygen incorporation increased. However, the sputtering of the metallic components of the film increased as the oxygen beam current increased, leading to very low growth rates.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Sign in / Sign up

Export Citation Format

Share Document