Polarization in CdTe radiation detectors at high X-ray photon fluxes (Conference Presentation)

2016 ◽  
Author(s):  
Jan Franc ◽  
Václav Dedic ◽  
Jakub Pekárek ◽  
Eduard Belas ◽  
Jan Tous
Keyword(s):  
Radiation Detectors ◽  
X Ray

scholarly journals Synthesis and Characterisation of Thin Films of Bismuth Triiodide for Semiconductor Radiation Detectors

2014 ◽  
Vol 2014 ◽  
pp. 1-3 ◽  
Author(s):  
Alka Garg ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Room Temperature ◽  
Active Material ◽  
Visible Region ◽  
Radiation Detectors ◽  
Radiation Absorption ◽  
X Rays ◽  
X Ray ◽  
Bismuth Iodide

Bismuth iodide is a potentially active material for room temperature radiation detector, as it is well reported in the literature that it has both wide energy band gap and high atomic absorption coefficient. Crystalline films of high atomic number and high radiation absorption coefficient can absorb the X-rays and convert them directly into electrical charges which can be read by imaging devices. Therefore, it was proposed to grow thin films of Bismuth iodide on glass substrate using thermal evaporation technique in vacuum to avoid the inclusion of impurities in the films. The structural studies of the films were carried out using XRD and optical absorption measurement was carried out in the UV/VIS region using spectrophotometer. All Bismuth iodide films grown at room temperature are polycrystalline and show X-ray diffraction peaks at angles reported in research papers. The optical transmission spectra of BiI3 films show a high transmission of about 80% in visible region with a sharp fall near the fundamental absorption at 650 nm. Resistivity of the as-grown film was found to be around 1012 ohm-cm suitable value for X-ray detection application. Films were subjected to scanning electron microscopy to study the growth features of both as-grown and annealed films.

scholarly journals Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films

2021 ◽  
pp. 81-86
Author(s):  
Sharifa Utamuradova ◽  
Sultanposha Muzafarova ◽  
Abdulla Abdugafurov ◽  
Kakhramon Fayzullaev ◽  
Elmira Naurzalieva ◽  
...  
Keyword(s):  
Room Temperature ◽  
Specific Resistance ◽  
Radiation Detectors ◽  
Columnar Structure ◽  
Nuclear Materials ◽  
X Ray ◽  
Molybdenum Substrate ◽  
Cdznte Detectors ◽  
And Control ◽  
Polycrystalline Semiconductor

Based on CdTe and CdZnTe detectors a number of promising devices were created, which found their application in metallurgy, in solving the problems of customs control and control of nuclear materials, as well as matrix detectors created for the manufacture of medical devices and devices for space research. Detectors, created on the basis of polycrystalline semiconductor CdTe and CdZnTe films with a columnar structure on a molybdenum substrate with a thickness d = 30150 μm, had a specific resistance p > 10^5 10^8 W-cm. The energy resolution of the CdTe and CdZnTe detectors at room temperature reached ~ 5 keV on the 59.6 keV 241Am line.

High radiation resistant crystals for x-ray and γ-radiation detectors

2021 ◽  
Author(s):  
Valery M. Skliarchuk ◽  
Petro M. Fochuk ◽  
Aleksey E. Bolotnikov ◽  
Ralph B. James
Keyword(s):  
Radiation Detectors ◽  
High Radiation ◽  
Γ Radiation ◽  
X Ray ◽  
Radiation Resistant

Mass spectrometric study of the leak tightness of products made of technical sintered beryllium

2021 ◽  
Vol 87 (4) ◽  
pp. 26-31
Author(s):  
A. N. Fokanov ◽  
V. F. Podurazhnaya ◽  
A. V. Tebyakin
Keyword(s):  
Raw Materials ◽  
Flaw Detection ◽  
Mass Spectrometric Study ◽  
Radiation Energy ◽  
Radiation Detectors ◽  
Mass Spectrometric ◽  
High Tech ◽  
Vacuum Equipment ◽  
X Ray ◽  
Leak Tightness

Beryllium products exhibiting a low level of absorption of the radiation energy are widely used in scientific instrumentation design (x-ray technology, radiation detectors, etc.). We present the results of studying the leak tightness of products (disks, plates) made of technical sintered beryllium of standard purity and foil obtained by «warm» rolling from high-purity beryllium. The relevant standards and requirements for testing are given. The leak tightness control was performed using mass spectrometric helium leak detectors with forevacuum backing pumps (oil and dry diaphragm pumps) and specialized vacuum equipment. The parameters of tightness of samples made of technical sintered beryllium were determined. The level of the helium signal during blowing was (0.6 – 7.4) × 10–11 Pa · m3/sec, which corresponds to the tightness standard of foreign analogues and matches the requirements of domestic manufacturers of x-ray equipment. The data spread tended to increase due to the growth of the background value. The obtained results can be used to improve high-tech equipment intended for flaw detection, medical devices, rapid analysis of ore raw materials, radiation safety equipment, etc.

Effects of Quasiparticle Diffusion in Nb-Based Superconducting Tunnel Junctions Under X-Rays Irradiation

1999 ◽  
Vol 13 (09n10) ◽  
pp. 1247-1252
Author(s):  
Emanuela Esposito ◽  
Luigi Frunzio ◽  
Loredana Parlato ◽  
Roberto Cristiano ◽  
Mikhall Lisitskii ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Signal Amplitude ◽  
Radiation Detectors ◽  
Superconducting Tunnel Junctions ◽  
X Rays ◽  
Theoretical Limit ◽  
X Ray ◽  
Operational Temperature ◽  
Amplitude Spectra ◽  
Quasiparticle Diffusion

A novel class of sensors is constituted by radiation detectors based on superconducting tunnel junctions, which could lead in the next future to an advanced instrumentation with an interesting fall out for applications. So far, this area is restricted to LTc superconductors. Among them, niobium has the highest critical temperature and is therefore less demanding in terms of operational temperature. The best performances achieved so far in pure Nb-based junction are far away from the expected theoretical limit. The reason of this discrepancy could be attributed to various problems. Quasiparticle diffusion and edge losses seem to be responsible for the broadening of the signal amplitude spectra so often observed and reported in literature. In this paper we report on efforts to investigate the response to X-Ray of Nb-based superconducting tunnel junctions in terms of a model which includes the quasiparticle diffusion and the edge losses. Our model takes into account the contribution from both the electrodes of the junction and well reproduces the experimental data.

The Fabrication of Mercuric Iodide Detectors for Use in Wavelength Dispersive X-Ray Analysers and Backscatter Photon Measurements

1982 ◽  
Vol 16 ◽  
Author(s):  
John H. Howes ◽  
John Watling
Keyword(s):  
Room Temperature ◽  
Gamma Ray ◽  
Surface Passivation ◽  
Electrical Contact ◽  
Scintillation Counter ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Gamma Ray Spectrometry ◽  
Mercuric Iodide ◽  
X Ray

ABSTRACTThis paper describes the fabrication of mercuric iodide nuclear radiation detectors suitable for X and gamma ray spectrometry at room temperature. The active area of the detectors studied are between 0.2 and 1.5cm sq and they are up to 0.5mm thick. The method of producing a stable electrical contact to the crystal using sputtered germanium has been studied. The X-ray resolution of a 1.5cm sq. area detector at 32 keV is 2.3 keV FWHM when operated at room temperature in conjunction with a time variant filter amplifier. A factor which is important in the fabrication of the detector is the surface passivation necessary to achieve a useful detector life.This type of detector has been used on a wavelength dispersive X-ray spectrometer for energy measurements between 10 and 100 keV. The advantages over the scintillation counter, more commonly used, is the improved resolution of the HgI2 detector and its smaller size. The analyser is primarily used for the detection of low levels of heavy metals on particulate filters. The detectors have also been used on an experimental basis for gamma ray backscatter measurements in the medical field.

Silicon Material Growth for Nuclear Radiation Detectors

1982 ◽  
Vol 16 ◽  
Author(s):  
P. A. Glasow ◽  
B. O. Kolbesen
Keyword(s):  
Electronic Devices ◽  
Base Material ◽  
Radiation Detectors ◽  
High Energy ◽  
Nuclear Radiation ◽  
High Energy Particle ◽  
Energy Particle ◽  
Particle Detectors ◽  
X Ray ◽  
Nuclear Radiation Detectors

As a base material for semiconductor devices, silicon is more widely used than any other semiconductor. The physical properties, in particular the bandgap which is significantly larger than that of germanium, makes the material extremely important for electronic devices. The world's total annual production of silicon is at present some 2000 t [1]. Compared with this, the 10 kg/year of silicon that is used for detectors is rather modest. However, since work on semiconductor radiation detectors started 25 years ago, silicon in addition to germanium forms the centre of interest as the basis for production of nuclear radiation spectrometers, mainly as high energy particle detectors, but also as X-ray detectors.

Water based scintillator ink for printed X-ray radiation detectors

2018 ◽  
Vol 69 ◽  
pp. 26-31 ◽  
Author(s):  
J. Oliveira ◽  
P.M. Martins ◽  
V. Correia ◽  
L. Hilliou ◽  
D. Petrovykh ◽  
...  
Keyword(s):  
Radiation Detectors ◽  
X Ray ◽  
Water Based

Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors

2009 ◽  
Vol 615-617 ◽  
pp. 845-848 ◽  
Author(s):  
Giuseppe Bertuccio ◽  
S. Caccia ◽  
Filippo Nava ◽  
Gaetano Foti ◽  
Donatella Puglisi ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
State Of The Art ◽  
Reverse Current ◽  
Radiation Detectors ◽  
Low Noise ◽  
Active Volume ◽  
X Ray ◽  
Pixel Detectors ◽  
Schottky Junctions ◽  
Sic Wafer

The design and the experimental results of some prototypes of SiC X-ray detectors are presented. The devices have been manufactured on a 2’’ 4H-SiC wafer with 115 m thick undoped high purity epitaxial layer, which constitutes the detection’s active volume. Pad and pixel detectors based on Ni-Schottky junctions have been tested. The residual doping of the epi-layer was found to be extremely low, 3.7 x 1013 cm-3, allowing to achieve the highest detection efficiency and the lower specific capacitance of the detectors. At +22°C and in operating bias condition, the reverse current densities of the detector’s Schottky junctions have been measured to be between J=0.3 pA/cm2 and J=4 pA/cm2; these values are more than two orders of magnitude lower than those of state of the art silicon detectors. With such low leakage currents, the equivalent electronic noise of SiC pixel detectors is as low as 0.5 electrons r.m.s at room temperature, which represents a new state of the art in the scenario of semiconductor radiation detectors.

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