scholarly journals Synthesis and Characterisation of Thin Films of Bismuth Triiodide for Semiconductor Radiation Detectors

2014 ◽  
Vol 2014 ◽  
pp. 1-3 ◽  
Author(s):  
Alka Garg ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Room Temperature ◽  
Active Material ◽  
Visible Region ◽  
Radiation Detectors ◽  
Radiation Absorption ◽  
X Rays ◽  
X Ray ◽  
Bismuth Iodide

Bismuth iodide is a potentially active material for room temperature radiation detector, as it is well reported in the literature that it has both wide energy band gap and high atomic absorption coefficient. Crystalline films of high atomic number and high radiation absorption coefficient can absorb the X-rays and convert them directly into electrical charges which can be read by imaging devices. Therefore, it was proposed to grow thin films of Bismuth iodide on glass substrate using thermal evaporation technique in vacuum to avoid the inclusion of impurities in the films. The structural studies of the films were carried out using XRD and optical absorption measurement was carried out in the UV/VIS region using spectrophotometer. All Bismuth iodide films grown at room temperature are polycrystalline and show X-ray diffraction peaks at angles reported in research papers. The optical transmission spectra of BiI3 films show a high transmission of about 80% in visible region with a sharp fall near the fundamental absorption at 650 nm. Resistivity of the as-grown film was found to be around 1012 ohm-cm suitable value for X-ray detection application. Films were subjected to scanning electron microscopy to study the growth features of both as-grown and annealed films.

scholarly journals Can Smartphones Measure Radiation Exposures?

2015 ◽  
Vol 8 (1) ◽  
Author(s):  
Lawrence Y. Pang
Keyword(s):  
Ionizing Radiation ◽  
Incident Angle ◽  
Normal Incidence ◽  
Radiation Detectors ◽  
Calibration Factor ◽  
Radiation Absorption ◽  
X Rays ◽  
X Ray ◽  
The Public ◽  
Standard Detector

Ionizing radiation, such as X-rays, is potentially harmful to humans. Ionizing radiation can be detected by radiation detectors, which are not easily available to the public. Thus, the feasibility of using smartphones to detect and measure X-ray exposures was investigated in this work. Two sets of experiments were conducted using an Apple iPhone 4 smartphone. For one experiment, the smartphone was used as an X-ray source, while the second experiment tested the use of the iPhone as an exposure meter. Using the iPhone 4, it was found that when videos were taken during X-ray exposures, white tracks appeared in the videos, which indicated a radiation absorption event. By counting the total number of tracks in the videos (using image processing software), X-ray exposures could be determined using a calibration factor obtained from the first set of experiments. It was found that the calibration factor was strongly dependent on the video settings, but weakly dependent on the incident angle of X-rays on the phone as long as the incident angle was within ±45 degrees from the normal incidence. It was observed that, as an exposure meter, the iPhone 4 was ±20% accurate compared to a standard detector used by hospitals. The results of this work suggest that it is feasible to use an iPhone 4 to measure radiation exposures.Les rayonnements ionisants comme les rayons X, peuvent être nuisible sans être sensiblement distingués par des humains. La faisabilité de l’utilisation des smartphones qui peuvent détecter des rayons X, et ce, en mesurant l’exposition à de tels rayons faisait l’objet de cet étude. Deux séries d’expériences ont été fait avec un iPhone4. Une série portait sur le calibrage de l’iPhone avec une source de rayon X. L’autre série portait sur l’utilisation de l’iPhone comme dispositif de photométrie. L’expérience a révélé que lors de la prise de vidéo pendant une exposition aux rayons X, des brillantes traces blanches se sont apparues dans les vidéos dont chacune a indiqué un événement d’absorption de radiation. En comptant le nombre total de traces dans les vidéos (utilisant un logiciel de traitement d’image), des expositions radiographiques pourraient être déterminées en utilisant un facteur de calibrage obtenu de la première série d’expériences. Les paramètres de vidéo ont eu une importante influence sur le facteur de calibrage, tandis que l’influence de l’angle d’incident de radiographies au téléphone leur signifiait moins tant que l’angle d’incident était d’environ ±45 degrés de l’incidence normale. L’iPhone comme dispositif de photométrie révélait être d’environ ±20 % précis par rapport à un détecteur standard utilisé dans des hôpitaux.

scholarly journals Study on the Physical Properties of Pulsed Laser Deposited Doped Copper Oxide (Cu2 O) Thin Films for Optical Device Applications

2020 ◽  
pp. 1-6
Author(s):  
Gurpreet Kaur ◽  
◽  
Anirban Mitra ◽  
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Room Temperature ◽  
Energy Gap ◽  
Visible Region ◽  
Pulsed Laser ◽  
Practical Applications ◽  
Wide Range ◽  
Cu2o Films ◽  
Cu2o Thin Films

Cuprous oxide, (Cu2O) is a promising p-type semiconductor, finds practical applications in a wide range of optoelectronic devices. In this paper, pulsed laser deposition technique is employed to deposit doped Cu2O thin films. The influence of doping of silver (Ag), aluminium (Al) and co-doping of (Ag+Al) in Cu2O thin films is illustrated. X-ray diffraction pattern depicts cubic crystal structure and polycrystalline nature of grown thin films, having small crystallite size (~50 nm). Atomic force microscopy (AFM) obtained surface images of the films portrait uniform grain morphology with low surface roughness. The room temperature optical characterizations of the thin films, the transmittance versus wavelength in the UV-Visible region exhibits low transmission values upto 10–20%, illustrates the large absorption coefficient (α), numerical values varying from 104 to 105cm-1 for doped Cu2O films. The large values of absorption coefficient facilitate the optical and photovoltaic applications of the doped Cu2O films. The addition of dopant species Ag and Al, the optical band gap is increased and it varies in the range of 2.65−2.84 eV. The increased energy gap is attributed to the substitution of Al and Ag ions for the oxygen ions reduce the width of valence band to widen the energy gap. The I−V characteristics plot obtained at room temperature indicates low electrical resistivity (ρ ~ 10-2Ω- cm) of the films. The obtained results are of high relevance and indicate potential applications of the grown thin films in semiconductor devices such as solar cells, photodetectors and optical sources

Some studies on Molybdenum doped Indium oxide thin films rf sputtered at room temperature

2006 ◽  
Vol 928 ◽  
Author(s):  
E. Elangovan ◽  
P Barquinha ◽  
A Pimental ◽  
A. S. Viana ◽  
R Martins ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Indium Oxide ◽  
Room Temperature ◽  
Optical Band Gap ◽  
X Ray Diffraction ◽  
Volume Percentage ◽  
Transmittance Spectra ◽  
X Ray ◽  
Glass Substrates

ABSTRACTThin films of molybdenum doped indium oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of oxygen volume percentage (OVP) ranging 1.4 - 10.0 % in the sputtering chamber. The thickness of the films found varying between 180 and 260 nm. The X-ray diffraction pattern showed the films are polycrystalline with the peaks corresponding to (222) and (400) planes and one among them showing as a preferential orientation. It is observed that the preferred orientation changes from (222) plane to (400) as the OVP increases from 1.4 to 10.0 %. The transmittance spectra were found to be in the range of 77 to 89 %. The optical band gap calculated from the absorption coefficient of transmittance spectra was around 3.9 eV. The negative sign of Hall coefficient confirmed the films were n-type conducting. The bulk resistivity increased from 2.26 × 10−3 to 4.08 × 10−1 Ω−cm for the increase in OVP from 1.4 to 4.1 %, and thereafter increased dramatically so as the Hall coefficients were not detectable. From the AFM morphologies it is evaluated that the RMS roughness of the films ranges from 0.9 to 3.2 nm.

Bandgap tuning in ZnO thin films and enhanced n-type properties through Mn doping synthesized by a simple spray pyrolysis

2021 ◽  
pp. 2150155
Author(s):  
Md. Khorshed Alam ◽  
Mehnaz Sharmin ◽  
Jiban Podder
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Room Temperature ◽  
Visible Region ◽  
Zno Thin Films ◽  
Bandgap Energy ◽  
Chemical Compositions ◽  
Mn Doping ◽  
X Ray ◽  
Mn Doped

Undoped and manganese (Mn)-doped zinc oxide (ZnO) thin films have been deposited onto glass substrates at 300[Formula: see text]C using a low cost spray pyrolysis technique. Structural, optical and electrical properties of the as-deposited films have been investigated. Scanning electron microscopy images show the existence of clusters with well-defined nucleation centers consisting of highly dense ganglia-like fibers over a large area around the nucleation center. Chemical compositions of the ZnO and Mn-doped ZnO thin films are studied by using energy dispersive X-ray (EDX) analysis. X-ray diffraction spectra depict that the films have polycrystalline wurtzite structure. The average crystallite sizes are calculated in the range of 8–16 nm by Williamson–Hall method and found in good agreement with Scherer method. Optical transmittance of the films is about 80% in the visible region. Bandgap energy is tuned to 2.83 eV from 3.10 eV with increasing Mn doping. Electrical resistivity at room-temperature decreases significantly with increasing Mn doping as well as increasing temperature from 300–440 K. The activation energies in the temperature ranges 300–350 K and 350–440 K are found to be in the range of 0.25–0.16 eV and 0.35–0.59 eV, respectively. Hall Effect measurements show that the thin films have negative Hall co-efficient indicating [Formula: see text]-type conductivity at room-temperature. Carrier concentration is found to be of the order of 10[Formula: see text] cm[Formula: see text].

Effect of trytophan as dopant on potassium acid phthalate single crystals

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Visible Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Slow Evaporation Technique ◽  
Absorption Studies ◽  
Evaporation Technique ◽  
Potassium Acid Phthalate ◽  
Acid Phthalate

Optically transparent single crystals of potassium acid phthalate (KAP, 0.5 g) 0.05 g and 0.1 g (1 and 2 mol %) trytophan were grown in aqueous solution by slow evaporation technique at room temperature. Single crystal X- ray diffraction analysis confirmed the changes in the lattice parameters of the doped crystals. The presence of functional groups in the crystal lattice has been determined qualitatively by FTIR analysis. Optical absorption studies revealed that the doped crystals possess very low absorption in the entire visible region. The dielectric constant has been studied as a function of frequency for the doped crystals. The thermal stability was evaluated by TG-DSC analysis.

Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

2012 ◽  
Vol 501 ◽  
pp. 236-241 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah ◽  
Ramadan E. Shaiboub
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Vibrating Sample Magnetometer ◽  
X Ray ◽  
Garnet Phase ◽  
Sol Gel Process ◽  
Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

How to Use the Features of Total Reflection of X-Rays for Energy Dispersive XRF

1988 ◽  
Vol 32 ◽  
pp. 105-114 ◽  
Author(s):  
H. Schwenke ◽  
W. Berneike ◽  
J. Knoth ◽  
U. Weisbrod
Keyword(s):  
Thin Films ◽  
Penetration Depth ◽  
Fluorescence Analysis ◽  
Total Reflection ◽  
X Rays ◽  
X Ray ◽  
Characteristic Features ◽  
Respective Characteristic ◽  
Nanometer Regime ◽  
Sensitive Method

AbstractThe total reflection of X-rays is mainly determined by three parameters , that is the orltical angle, the reflectivity and the penetration depth. For X-ray fluorescence analysis the respective characteristic features can be exploited in two rather different fields of application. In the analysis of trace elements in samples placed as thin films on optical flats, detection limits as low as 2 pg or 0.05 ppb, respectively, have been obtained. In addition, a penetration depth in the nanometer regime renders Total Reflection XRF an inherently sensitive method for the elemental analysis of surfaces. This paper outlines the main physical and constructional parameters for instrumental design and quantitation in both branches of TXRF.

Structure and Conductivity of Iodine-Doped C60 Thin Films

1994 ◽  
Vol 359 ◽  
Author(s):  
Jun Chen ◽  
Haiyan Zhang ◽  
Baoqiong Chen ◽  
Shaoqi Peng ◽  
Ning Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Thermally Activated ◽  
Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

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