Study on the stress field characteristics of single crystal silicon irradiated by composite high-energy pulsed laser

2021 ◽  
Author(s):  
Zechen Xue ◽  
Lihong Yang ◽  
Yinzi Wu ◽  
Guanwen Chen ◽  
Menghan Li
Keyword(s):  
Stress Field ◽  
Single Crystal ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
High Energy ◽  
Crystal Silicon

Oxidation Effects During the Formation of Buried Sb Dopant Profiles in Silicon Using Pulsed Laser Epitaxy

1991 ◽  
Vol 235 ◽  
Author(s):  
Randall J. Carolissen ◽  
R. Pretorius
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Oxidation Kinetics ◽  
Ruby Laser ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Heating Time ◽  
No Oxidation ◽  
Crystal Silicon ◽  
Oxygen Concentrations

ABSTRACTSevere oxidation inhibited epitaxy when buried Sb profiles in single crystal silicon were formed from evaporated layers irradiated in atmosphere with a pulsed Q-switched ruby laser. Oxygen concentrations as high as 5×1017atoms/cm2 (equivalent to 105nm SiO2) were measured. However, structures prepared without the Sb layer and irradiated under identical conditions, showed no oxidation. Oxidation of Sb as a source of the measured oxygen was ruled out, while the total heating time during laser irradiation is so short (nano- to milliseconds) that normal oxidation kinetics cannot account for the amount of SiO2 measured. Irradiations in vacuum and in a helium ambient showed that the oxygen responsible for these effects is supplied from the ambient in which irradiations are carried out. Also no oxidation was observed when structures, prepared on a substrate heated to 350°C, were irradiated in atmosphere. A model to account for these oxidation effects is proposed.

Raman Scattering Characterization of Bonding Defects in Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
Raphael Tsu
Keyword(s):  
Energy Density ◽  
Raman Scattering ◽  
Single Crystal ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Raman Peak ◽  
Crystal Silicon ◽  
Amorphous Si ◽  
Phonon Structure

ABSTRACTRaman scattering is used for the characterization of defects in Si. Damage is produced in single crystal silicon by ion-implantation of As and Si. The phonon structure of the damaged layer is that of the typical amorphous Si. After irradiation by pulsed laser(10ns,532nm) at energy density of approximately 0.1J/cm2, a Raman peak appears at a frequency between 508 cm−1 and 517 cm−1 depending on implant dosage. The higher the implant dosage, the lower is the frequency. We explain this in terms of the residual bonding defects caused by the presence of extraneous atoms such as oxygen. On the other hand, irradiation at an energy density in excess of 0.5 J/cm2, a Raman peak appears at a frequency close to that of the single crystal except for small shifts due to Fano-shift. For implant dosage in excess of 4×1016 As/cm2 , we have found additional peaks at 222 cm−1 and 267 cm−1 which are close to the metallic arsenic modes indicating the presence of arsenic clusters.

scholarly journals Nanosecond Pulsed Laser Processing of Ion Implanted Single Crystal Silicon Carbide Thin Layers

2014 ◽  
Vol 56 ◽  
pp. 933-943 ◽  
Author(s):  
Tuğrul Özel ◽  
Thanongsak Thepsonthi ◽  
Voshadhi P. Amarasinghe ◽  
George K. Celler
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Laser Processing ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Thin Layers ◽  
Crystal Silicon ◽  
Nanosecond Pulsed Laser ◽  
Pulsed Laser Processing ◽  
Ion Implanted

scholarly journals X-Ray Interferometry of Volume Changes in C+Implanted Silicon

1973 ◽  
Vol 28 (5) ◽  
pp. 654-656b ◽  
Author(s):  
G. H. Schwuttke ◽  
K. Brack
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Radiation Damage ◽  
Single Crystal Silicon ◽  
High Energy ◽  
Volume Changes ◽  
Crystal Silicon ◽  
X Ray

High energy C+ implantation is used to construct a two crystal monolithic X-ray interferometer. The X-ray interferometer technique is applied to in-situ studies of radiation damage annealing in the interferometer. Volume changes in the crystal due to the transformation of single crystal silicon to amorphous silicon and due to the formation of silicon carbide are measured.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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