Dependence of silicon thin-film growth characteristics on substrate temperature

2010 ◽  
Author(s):  
Longzhi Lin ◽  
Haojie Zhang ◽  
Shaoji Jiang
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Film Growth ◽  
Growth Characteristics ◽  
Thin Film Growth ◽  
Silicon Thin Film

Textured (111) crystalline silicon thin film growth on flexible glass by e-beam evaporation

2015 ◽  
Vol 158 ◽  
pp. 269-273 ◽  
Author(s):  
Shane McMahon ◽  
Ashok Chaudhari ◽  
Zhouying Zhao ◽  
Harry Efstathiadis
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Crystalline Silicon ◽  
Thin Film Growth ◽  
Silicon Thin Film

The Analysis of the Film Morphology

2013 ◽  
Vol 734-737 ◽  
pp. 2377-2381
Author(s):  
Bo Xiong Zhao ◽  
Yu Jian Du ◽  
Xin Sui
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Film Growth ◽  
Ybco Film ◽  
Thin Film Growth ◽  
Schematic Diagram ◽  
Film Morphology ◽  
Crystal Film ◽  
New Type

Thin film technologies are widely used in modern scientific and technological fields .The theory of thin film growth is guidance for developing a new-type materials and improving the properties of custom thin film materials .In this article , the studies of thin film growth are carried out. The studies are made a simulation of surface growth of the GaxIn1-xAs1-ySbyand YBCO film, Schematic diagram of the surface morphology under different substrate temperature of thin film growth are obtained and analyzed .Many significant results are found. First of all ,the background of the topic ,research purpose and significance are described in this article .Then the studies of thin film growth are carried out ，to analyse the effects of different elements on the surface of the crystal film.

EFFECT OF SURFACTANT AND SUBSTRATE TEMPERATURE ON THE GROWTH OF Ag FILMS ON A SAPPHIRE SURFACE

1997 ◽  
Vol 04 (02) ◽  
pp. 219-222 ◽  
Author(s):  
T. LEWOWSKI ◽  
P. WIECZOREK
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Sapphire Substrate ◽  
Metal Film ◽  
Film Growth ◽  
Substrate Surface ◽  
Thin Metal Film ◽  
Thin Film Growth ◽  
Sapphire Surface ◽  
Electrically Conducting

The possibility of modification of the thin film growth on an insulating (sapphire) substrate by using a Ga monolayer as a "surfactant" was studied. We found that the films grown in this way are electrically conducting and can emit photoelectrons at much lower thickness than those deposited on a pure substrate. The surfactant stabilizes the positions of Ag atoms on the substrate surface and inhibits the coalescence of small nuclei into bigger islands, even when the film is annealed to 450 K. This fact may be very important for thin metal film technology.

Modeling of Epitaxial Silicon Thin‐Film Growth on a Rotating Substrate in a Horizontal Single‐Wafer Reactor

1995 ◽  
Vol 142 (12) ◽  
pp. 4272-4278 ◽  
Author(s):  
Hitoshi Habuka ◽  
Takatoshi Nagoya ◽  
Masatake Katayama ◽  
Manabu Shimada ◽  
Kikuo Okuyama
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Epitaxial Silicon ◽  
Silicon Thin Film

Ultrathin-Film Growth ofpara-Sexiphenyl (I): Submonolayer Thin-Film Growth as a Function of the Substrate Temperature

2008 ◽  
Vol 112 (26) ◽  
pp. 7816-7820 ◽  
Author(s):  
Junliang Yang ◽  
Tong Wang ◽  
Haibo Wang ◽  
Feng Zhu ◽  
Gao Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Film Growth ◽  
Ultrathin Film ◽  
Thin Film Growth

Molecular-Dynamics Simulations of Hydrogenated Amorphous Silicon Thin-Film Growth

1995 ◽  
Vol 408 ◽  
Author(s):  
T. Ohira ◽  
O. Ukai ◽  
M. Noda ◽  
Y. Takeuchi ◽  
M. Murata ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Film Growth ◽  
Hydrogenated Amorphous Silicon ◽  
Md Simulations ◽  
Thin Film Growth ◽  
Silicon Thin Film ◽  
Radical Migration ◽  
Hydrogenated Amorphous

AbstractWe have performed molecular-dynamics (MD) simulations of hydrogenated amorphous silicon (a-Si:H) thin-film growth using realistic many-body semiclassical potentials developed to describe Si-H interactions. In our MD model, it was assumed that SiH3, SiH2 and the H radicals are main precursors for the thin-film growth. In MD simulations of a-Si:H thin-film growth by many significant precursor SiH3 radicals, we have evaluated average radical migration distances, defect ratios, hydrogen contents, and film growth rates as a function of different incident radical energies to know the effect of the radical energization on the properties. As a result of the comparison between the numerical and experimental results, it was observed that the agreement is fairly good, and that an increase of radical migration distance due to the radical energization is effective on a- Si:H thin-film growth with a low defect.

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