EFFECT OF SURFACTANT AND SUBSTRATE TEMPERATURE ON THE GROWTH OF Ag FILMS ON A SAPPHIRE SURFACE

1997 ◽  
Vol 04 (02) ◽  
pp. 219-222 ◽  
Author(s):  
T. LEWOWSKI ◽  
P. WIECZOREK

The possibility of modification of the thin film growth on an insulating (sapphire) substrate by using a Ga monolayer as a "surfactant" was studied. We found that the films grown in this way are electrically conducting and can emit photoelectrons at much lower thickness than those deposited on a pure substrate. The surfactant stabilizes the positions of Ag atoms on the substrate surface and inhibits the coalescence of small nuclei into bigger islands, even when the film is annealed to 450 K. This fact may be very important for thin metal film technology.

2013 ◽  
Vol 734-737 ◽  
pp. 2377-2381
Author(s):  
Bo Xiong Zhao ◽  
Yu Jian Du ◽  
Xin Sui

Thin film technologies are widely used in modern scientific and technological fields .The theory of thin film growth is guidance for developing a new-type materials and improving the properties of custom thin film materials .In this article , the studies of thin film growth are carried out. The studies are made a simulation of surface growth of the GaxIn1-xAs1-ySbyand YBCO film, Schematic diagram of the surface morphology under different substrate temperature of thin film growth are obtained and analyzed .Many significant results are found. First of all ,the background of the topic ,research purpose and significance are described in this article .Then the studies of thin film growth are carried out ,to analyse the effects of different elements on the surface of the crystal film.


Vacuum ◽  
2000 ◽  
Vol 56 (3) ◽  
pp. 185-190 ◽  
Author(s):  
Helin Wei ◽  
Zuli Liu ◽  
Kailun Yao

2002 ◽  
Vol 17 (2) ◽  
pp. 302-305 ◽  
Author(s):  
D. X. Huang ◽  
Y. Nakamura ◽  
Y. Yamada ◽  
I. Hirabayshi

By combining the cross-sectional observation of the randomly oriented film areas and the analyses of the film microstructural influence by the substrate-surface morphology, we achieved a novel understanding of the YBa2Cu3O7–x (YBCO) thin film growth process, which leads to an explanation of different microstructures formed in YBCO thin films. Selective and competitive growth of YBa2Cu3O7–x and Ba–Cu–O/Cu–O was found to occur in the whole film growth process depending on the local surface roughness in which the interfacial energy played a controlling role.


2008 ◽  
Vol 112 (26) ◽  
pp. 7816-7820 ◽  
Author(s):  
Junliang Yang ◽  
Tong Wang ◽  
Haibo Wang ◽  
Feng Zhu ◽  
Gao Li ◽  
...  

2006 ◽  
Vol 200 (12-13) ◽  
pp. 4027-4031 ◽  
Author(s):  
D.M. Zhang ◽  
L. Guan ◽  
Z.H. Li ◽  
G.J. Pan ◽  
H.Z. Sun ◽  
...  

2011 ◽  
Vol 320 ◽  
pp. 373-376
Author(s):  
Zhi Qiang Liu ◽  
Jie Li ◽  
Nai Gen Zhou ◽  
Jian Ning Wei

In this paper, the growth process of Ni deposited on the Cu() surface at 300K and 700K was simulated by molecular dynamics. The impact of the substrate temperature on the growth pattern and structure of thin film was investigated. The simulation results show that, at the higher substrate temperature, the surface of thin film is smoother and the growth pattern of thin film is two-dimensional layer, however, at the lower temperature, the growth mode of thin film is three-dimensional island.


2019 ◽  
Vol 19 (9) ◽  
pp. 5088-5096 ◽  
Author(s):  
Samir K. Saha ◽  
Rahul Kumar ◽  
Andrian Kuchuk ◽  
Mohammad Z. Alavijeh ◽  
Yurii Maidaniuk ◽  
...  

1994 ◽  
Vol 75 (8) ◽  
pp. 3964-3967 ◽  
Author(s):  
C. J. Sun ◽  
P. Kung ◽  
A. Saxler ◽  
H. Ohsato ◽  
K. Haritos ◽  
...  

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