Guanine as a gate dielectric/passivation layer for graphene-based sensors

SPIE Newsroom ◽  
2016 ◽  
Author(s):  
Adrienne D. Williams ◽  
Fahima Ouchen ◽  
James Grote
Keyword(s):  
Gate Dielectric ◽  
Passivation Layer

DNA-nucleobases: gate dielectric/passivation layer for flexible GFET-based sensor applications

2015 ◽  
Author(s):  
Adrienne D. Williams ◽  
Fahima Ouchen ◽  
Steve S. Kim ◽  
Said Elhamri ◽  
Rajesh R. Naik ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Passivation Layer ◽  
Sensor Applications ◽  
Dna Nucleobases

Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

2008 ◽  
Vol 516 (5) ◽  
pp. 770-772 ◽  
Author(s):  
S.P. Tiwari ◽  
P. Srinivas ◽  
S. Shriram ◽  
Nitin S. Kale ◽  
S.G. Mhaisalkar ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectric ◽  
Passivation Layer ◽  
Organic Fets

scholarly journals Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer

2014 ◽  
Vol 61 (4) ◽  
pp. 211-214 ◽  
Author(s):  
S. C. Liu ◽  
Y.-Y. Wong ◽  
Y.-C. Lin ◽  
E. Y. Chang
Keyword(s):  
Gate Dielectric ◽  
Passivation Layer ◽  
Low Leakage ◽  
Current Collapse

Ultrathin TiO2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient

1999 ◽  
Vol 567 ◽  
Author(s):  
H. F. Luan ◽  
A. Y. Mao ◽  
S. J. Lee ◽  
T. Y. Luo ◽  
D. L. Kwong
Keyword(s):  
Nitric Oxide ◽  
Leakage Current ◽  
Gate Dielectric ◽  
Passivation Layer ◽  
No Oxidation ◽  
Oxidation Temperature ◽  
High Quality ◽  
Si Substrates ◽  
High Oxidation

ABSTRACTWe have fabricated very thin TiO2 film (Teq∼20Å) by RTP oxidation of sputtered Ti in NO ambient on nitrogen passivated Si substrates. The leakage current is about two orders magnitude lower than SiO2 of identical Teq. Results show that NO passivation layer prior to sputtering is critical in reducing the leakage current. XPS results show that the temperature RTP NO oxidation of sputtered Ti is very important for achieving high quality TiO2 films. high oxidation temperature an SiO2 layer is formed at the interface between TiO2 and Si and the leakage current is approaching to that of SiO2.

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