Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer

ECS Transactions ◽

10.1149/06104.0211ecst ◽

2014 ◽

Vol 61 (4) ◽

pp. 211-214 ◽

Author(s):

S. C. Liu ◽

Y.-Y. Wong ◽

Y.-C. Lin ◽

E. Y. Chang

Keyword(s):

Gate Dielectric ◽

Passivation Layer ◽

Low Leakage ◽

Current Collapse

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Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer

ECS Meeting Abstracts ◽

10.1149/ma2014-01/41/1530 ◽

2014 ◽

Keyword(s):

Gate Dielectric ◽

Passivation Layer ◽

Low Leakage ◽

Current Collapse

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Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer

IEEE Electron Device Letters ◽

10.1109/led.2019.2945175 ◽

2019 ◽

Vol 40 (12) ◽

pp. 1921-1924 ◽

Author(s):

Sheng Gao ◽

Quanbin Zhou ◽

Xiaoyi Liu ◽

Hong Wang

Keyword(s):

Dielectric Layer ◽

Gate Dielectric ◽

Passivation Layer ◽

Gan Hemt ◽

Current Collapse

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Effect of Ultrathin Si Passivation Layer for Ge MOS Structure with La2O3 Gate Dielectric

ECS Meeting Abstracts ◽

10.1149/ma2008-02/25/1945 ◽

2008 ◽

Keyword(s):

Gate Dielectric ◽

Passivation Layer ◽

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Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2786225 ◽

2018 ◽

Vol 65 (2) ◽

pp. 680-686 ◽

Author(s):

Cheng-Jung Lee ◽

Ke-Jing Lee ◽

Yu-Chi Chang ◽

Li-Wen Wang ◽

Der-Wei Chou ◽

...

Keyword(s):

Leakage Current ◽

Gate Dielectric ◽

Organic Transistors ◽

Barium Zirconate ◽

Low Leakage ◽

Low Leakage Current

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Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

Applied Physics Letters ◽

10.1063/1.4967186 ◽

2016 ◽

Vol 109 (19) ◽

pp. 193504 ◽

Author(s):

Yong Huang ◽

Jing-Ping Xu ◽

Lu Liu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

Passivation Layer ◽

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High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.051001 ◽

2016 ◽

Vol 55 (5) ◽

pp. 051001 ◽

Author(s):

Yu Sheng Chiu ◽

Jen Ting Liao ◽

Yueh Chin Lin ◽

Shin Chien Liu ◽

Tai Ming Lin ◽

...

Keyword(s):

Cerium Oxide ◽

Electron Mobility ◽

Molecular Beam ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Passivation Layer ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Deposition ◽

Beam Deposition

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Guanine as a gate dielectric/passivation layer for graphene-based sensors

SPIE Newsroom ◽

10.1117/2.1201601.006267 ◽

2016 ◽

Author(s):

Adrienne D. Williams ◽

Fahima Ouchen ◽

James Grote

Keyword(s):

Gate Dielectric ◽

Passivation Layer

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DNA-nucleobases: gate dielectric/passivation layer for flexible GFET-based sensor applications

10.1117/12.2190913 ◽

2015 ◽

Author(s):

Adrienne D. Williams ◽

Fahima Ouchen ◽

Steve S. Kim ◽

Said Elhamri ◽

Rajesh R. Naik ◽

...

Keyword(s):

Gate Dielectric ◽

Passivation Layer ◽

Sensor Applications ◽

Dna Nucleobases

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Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications

RSC Advances ◽

10.1039/c4ra01517g ◽

2014 ◽

Vol 4 (36) ◽

pp. 18493-18502 ◽

Author(s):

Jagan Singh Meena ◽

Min-Ching Chu ◽

Ranjodh Singh ◽

Chung-Shu Wu ◽

Umesh Chand ◽

...

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Gate Dielectric ◽

High Surface ◽

Thin Film Transistor ◽

Plastic Substrate ◽

Low Leakage ◽

Low Leakage Current ◽

High Surface Energy ◽

Low Temperature Process

Low-temperature process PS-b-PMMA composite film as gate dielectric deposited over plastic substrate, which exhibits high surface energy, high air stability, very low leakage current and better dielectric constant compared to their conventional polymer dielectrics for use in ZnO–TFT applications.

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Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

Thin Solid Films ◽

10.1016/j.tsf.2007.06.048 ◽

2008 ◽

Vol 516 (5) ◽

pp. 770-772 ◽

Author(s):

S.P. Tiwari ◽

P. Srinivas ◽

S. Shriram ◽

Nitin S. Kale ◽

S.G. Mhaisalkar ◽

...

Keyword(s):

Silicon Nitride ◽

Gate Dielectric ◽

Passivation Layer ◽

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