High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices

2016 ◽  
Vol 55 (5) ◽  
pp. 051001 ◽  
Author(s):  
Yu Sheng Chiu ◽  
Jen Ting Liao ◽  
Yueh Chin Lin ◽  
Shin Chien Liu ◽  
Tai Ming Lin ◽  
...  
Keyword(s):  
Cerium Oxide ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Gate Dielectric ◽  
High Electron Mobility Transistor ◽  
Passivation Layer ◽  
High Electron ◽  
High Electron Mobility ◽  
Molecular Beam Deposition ◽  
Beam Deposition

A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor

2018 ◽  
Vol 913 ◽  
pp. 870-875 ◽  
Author(s):  
Hui Wang ◽  
Ling Li Jiang ◽  
Ning Wang ◽  
Hong Yu Yu ◽  
Xin Peng Lin
Keyword(s):  
Electron Mobility ◽  
Gate Dielectric ◽  
High Electron Mobility Transistor ◽  
Charge Storage ◽  
High Electron ◽  
High Electron Mobility ◽  
Charge Trap ◽  
Enhancement Mode ◽  
A Charge ◽  
The Impact

In this work, a charge storage based enhancement mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. A stacked gate dielectrics, consisting of a tunnel oxide, a charge trap layer and a blocking oxide are applied in the HEMT structure. The E-mode can be realized by negative charge storage within the charge trap layer during the programming process. The impact of the programming condition and the thickness of the dielectrics on the threshold voltage (Vth) are simulated systematically. It is found that the Vth increases with the increasing programming voltage and time due to the increase of the storage charge. Under proper programming condition, the Vth can be increased to more than 2 V. Moreover, It is also found that the Vth increases with the decrease of the thickness of the dielectrics. In addition, it is found that the breakdown voltage of such HEMT can be adjusted by varying the gate dielectric stacks.

Sign in / Sign up

Export Citation Format

Share Document