Stress Sensitivity of Piezoelectric Ceramics: Part 3. Sensitivity to Compressive Stress Perpendicular to the Polar Axis

1968 ◽  
Vol 43 (3) ◽  
pp. 583-591 ◽  
Author(s):  
Helmut H. A. Krueger
Keyword(s):  
Compressive Stress ◽  
Piezoelectric Ceramics ◽  
Polar Axis ◽  
Stress Sensitivity

scholarly journals Electric polarization and crystal orientation of lead zirconate titanate under mechanical stress due to embedding in a metal matrix

2021 ◽  
Vol 3 (10) ◽  
Author(s):  
Tetsuro Yanaseko ◽  
Hiroshi Sato ◽  
Fumio Narita ◽  
Hiroshi Asanuma
Keyword(s):  
Residual Stresses ◽  
Compressive Stress ◽  
Lead Zirconate Titanate ◽  
Metal Matrix ◽  
Crystal Orientation ◽  
Piezoelectric Ceramic ◽  
Aluminum Matrix ◽  
Piezoelectric Ceramics ◽  
Ceramic Composites ◽  
Before And After

AbstractThe mechanical characteristics of piezoelectric ceramic fibers can be improved by embedding the fibers in a metal matrix. The compressive stress generated during the embedding process, however, limits the polarization of piezoelectric ceramic composites. To study and determine the relationship between the mechanical and piezoelectric properties of piezoelectric ceramics, we analyzed the crystallographic orientation of piezoelectric ceramics embedded in an aluminum matrix via electron backscatter diffraction. The orientation of the crystals before and after the polarization of the piezoelectric fibers, in which residual stresses were generated during embedding, was evaluated. Furthermore, the residual stresses were reduced by heat treatment, and the resultant angle of orientation was evaluated before and after polarization. Results showed that, as the residual stresses were relieved, the orientation of the piezoelectric ceramic crystals changed to reveal increased polarization. Our analysis shows that the crystal orientation of piezoelectric ceramics is impacted by the residual compressive stress that arises from embedding the piezoelectric fiber in the aluminum matrix; it also illustrates the hindering effect of residual stress on the polarization of piezoelectric ceramics.

Uniaxial compressive stress and temperature dependent mechanical behavior of (1- x )BiFeO 3 - x BaTiO 3 lead-free piezoelectric ceramics

2017 ◽  
Vol 43 (12) ◽  
pp. 9092-9098 ◽  
Author(s):  
Neamul H. Khansur ◽  
Julia Glaum ◽  
Oliver Clemens ◽  
Hailong Zhang ◽  
John E. Daniels ◽  
...  
Keyword(s):  
Mechanical Behavior ◽  
Compressive Stress ◽  
Piezoelectric Ceramics ◽  
Lead Free ◽  
Temperature Dependent ◽  
Uniaxial Compressive Stress

Effect of Uniaxial Compressive Stress on the Partially Fatigued Soft Lead Zirconate Titanate Piezoelectric Ceramics

2014 ◽  
Vol 602-603 ◽  
pp. 817-821 ◽  
Author(s):  
Bin Peng ◽  
Zhen Xing Yue
Keyword(s):  
Electric Field ◽  
Compressive Stress ◽  
Lead Zirconate Titanate ◽  
Domain Walls ◽  
Piezoelectric Ceramics ◽  
Lead Zirconate ◽  
Switching Behavior ◽  
Zirconate Titanate ◽  
Depolarization Effect ◽  
Uniaxial Compressive Stress

Uniaxial compressive stress was applied during fatigue process of soft lead zirconate titanate piezoelectric ceramics and their fatigue resistance was improved when the stress was larger than 20MPa. Before fatigue, compressive stress had a strong depolarization effect and restricted domains switching behavior under large electric field and domain walls motion under small electric field. However, in a partially fatigued state, while domains switching behavior was still restricted by compressive stress, domain walls motion was enhanced. Removal of the applied stress after partial fatigue induced the remnant polarization restored significantly.

Static characteristics of piezoelectric ceramics under high compressive stress

2020 ◽  
Vol 558 (1) ◽  
pp. 165-174
Author(s):  
Weidong Diao ◽  
Qiaosheng Pan ◽  
Zhihua Feng
Keyword(s):  
Compressive Stress ◽  
Piezoelectric Ceramics ◽  
Static Characteristics

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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