Damage Evaluation of Piezoelectric Ceramics from the Variation of the Elastic Coefficient under Static Compressive Stress

2009 ◽  
Vol 19 (3) ◽  
pp. 375-390 ◽  
Author(s):  
Mamoru Mizuno ◽  
Mitsuhiro Okayasu ◽  
Nozomi Odagiri
2021 ◽  
Vol 3 (10) ◽  
Author(s):  
Tetsuro Yanaseko ◽  
Hiroshi Sato ◽  
Fumio Narita ◽  
Hiroshi Asanuma

AbstractThe mechanical characteristics of piezoelectric ceramic fibers can be improved by embedding the fibers in a metal matrix. The compressive stress generated during the embedding process, however, limits the polarization of piezoelectric ceramic composites. To study and determine the relationship between the mechanical and piezoelectric properties of piezoelectric ceramics, we analyzed the crystallographic orientation of piezoelectric ceramics embedded in an aluminum matrix via electron backscatter diffraction. The orientation of the crystals before and after the polarization of the piezoelectric fibers, in which residual stresses were generated during embedding, was evaluated. Furthermore, the residual stresses were reduced by heat treatment, and the resultant angle of orientation was evaluated before and after polarization. Results showed that, as the residual stresses were relieved, the orientation of the piezoelectric ceramic crystals changed to reveal increased polarization. Our analysis shows that the crystal orientation of piezoelectric ceramics is impacted by the residual compressive stress that arises from embedding the piezoelectric fiber in the aluminum matrix; it also illustrates the hindering effect of residual stress on the polarization of piezoelectric ceramics.


2017 ◽  
Vol 43 (12) ◽  
pp. 9092-9098 ◽  
Author(s):  
Neamul H. Khansur ◽  
Julia Glaum ◽  
Oliver Clemens ◽  
Hailong Zhang ◽  
John E. Daniels ◽  
...  

2014 ◽  
Vol 602-603 ◽  
pp. 817-821 ◽  
Author(s):  
Bin Peng ◽  
Zhen Xing Yue

Uniaxial compressive stress was applied during fatigue process of soft lead zirconate titanate piezoelectric ceramics and their fatigue resistance was improved when the stress was larger than 20MPa. Before fatigue, compressive stress had a strong depolarization effect and restricted domains switching behavior under large electric field and domain walls motion under small electric field. However, in a partially fatigued state, while domains switching behavior was still restricted by compressive stress, domain walls motion was enhanced. Removal of the applied stress after partial fatigue induced the remnant polarization restored significantly.


2020 ◽  
Vol 558 (1) ◽  
pp. 165-174
Author(s):  
Weidong Diao ◽  
Qiaosheng Pan ◽  
Zhihua Feng

2011 ◽  
Vol 305 ◽  
pp. 348-352 ◽  
Author(s):  
Zhong Hua Zhang ◽  
Guang Ming Cheng ◽  
Jun Wu Kan ◽  
Ping Zeng ◽  
Jian Ming Wen

The development of new materials and the performance improvement of existing materials become an important subject from different aspects. In this paper, based on the theoretical research results of multiple piezoelectric effects, the influence of multiple piezoelectric effects on elastic coefficient of piezoelectric ceramics is studied. Theoretical analysis indicates that it is multiple piezoelectric effects that make piezoelectrics have two kinds of elastic and they result in the decrease of elastic compliance coefficients. Experimental validation is performed through PZT-5. Experimental results show that elastic compliance coefficient grows decreased by 0.912 times.


Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.


Sign in / Sign up

Export Citation Format

Share Document