Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe

Science ◽  
2020 ◽  
Vol 369 (6503) ◽  
pp. 542-545 ◽  
Author(s):  
Tian-Ran Wei ◽  
Min Jin ◽  
Yuecun Wang ◽  
Hongyi Chen ◽  
Zhiqiang Gao ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Room Temperature ◽  
Van Der Waals ◽  
Indium Selenide ◽  
Dislocation Slip ◽  
Cross Layer ◽  
Single Crystalline ◽  
Inorganic Semiconductors ◽  
Bulk Semiconductors ◽  
Inorganic Semiconductor

Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.

Wafer-Bonding and Thinning Technologies

MRS Bulletin ◽  
1998 ◽  
Vol 23 (12) ◽  
pp. 30-34 ◽  
Author(s):  
Cynthia A. Desmond-Colinge ◽  
Ulrich Gösele
Keyword(s):  
Gallium Arsenide ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Van Der Waals ◽  
Van Der Waals Forces ◽  
Crystalline Material ◽  
Single Crystalline ◽  
Fusion Bonding

“Wafer bonding” refers to the phenomenon in which mirror-polished, flat, and clean wafers of almost any material—when brought into contact at room temperature—are locally attracted to each other by van der Waals forces and adhere or “bond” to each other. Wafer bonding is alternatively also known as “direct bonding” or “fusion bonding,” or more colloquially as “gluing without glue.” Although this is by no means required, in most cases, the wafers involved in actual applications are typical semiconductor wafers consisting of single-crystalline material used in microelectronics or optoelectronics such as silicon or gallium arsenide.

scholarly journals Quantized electronic transitions in electrodeposited copper indium selenide nanocrystalline homojunctions

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shalini Menezes ◽  
Anura P. Samantilleke ◽  
Bryon W. Larson
Keyword(s):  
Scale Up ◽  
Indium Selenide ◽  
State Density ◽  
Single Step ◽  
Copper Indium Selenide ◽  
Ambient Atmosphere ◽  
Inorganic Semiconductors ◽  
3 Dimensional ◽  
Roll To Roll ◽  
Copper Indium

AbstractPairing semiconductors with electrochemical processing offers an untapped opportunity to create novel nanostructures for practical devices. Here we report the results of one such pairing: the in-situ formation of highly-doped, interface-matched, sharp nanocrystalline homojunctions (NHJs) with single step electrodeposition of two copper-indium-selenide (CISe) compounds on flexible foil. It produces a homogenous film, comprising inherently ordered, 3-dimensional interconnected network of pn-CISe NHJs. These CISe NHJs exhibit surprising non-linear emissions, quantized transitions, large carrier mobility, low trap-state-density, long carrier lifetime and possible up-conversion. They facilitate efficient separation of minority carriers, reduce recombination and essentially function like quantum materials. This approach mitigates the material issues and complex fabrication of incumbent nanoscale heterojunctions; it also overcomes the flexibility and scale-up challenges of conventional planar pn junctions. The self-stabilized CISe NHJ film can be roll-to-roll processed in ambient atmosphere, thus providing a promising platform for a range of optoelectronic technologies. This concept exemplified by CISe compounds can be adapted to create nano-scale pn junctions with other inorganic semiconductors.

scholarly journals Mid infrared polarization engineering via sub-wavelength biaxial hyperbolic van der Waals crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saurabh Dixit ◽  
Nihar Ranjan Sahoo ◽  
Abhishek Mall ◽  
Anshuman Kumar
Keyword(s):  
Room Temperature ◽  
Extinction Ratio ◽  
Polarization State ◽  
Van Der Waals ◽  
Photonic Devices ◽  
Mid Infrared ◽  
Precise Control ◽  
Electromagnetic Simulations ◽  
Frequency Regime ◽  
Sub Wavelength

AbstractMid-infrared (IR) spectral region is of immense importance for astronomy, medical diagnosis, security and imaging due to the existence of the vibrational modes of many important molecules in this spectral range. Therefore, there is a particular interest in miniaturization and integration of IR optical components. To this end, 2D van der Waals (vdW) crystals have shown great potential owing to their ease of integration with other optoelectronic platforms and room temperature operation. Recently, 2D vdW crystals of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2 \hbox {O}_5$$ V 2 O 5 have been shown to possess the unique phenomenon of natural in-plane biaxial hyperbolicity in the mid-infrared frequency regime at room temperature. Here, we report a unique application of this in-plane hyperbolicity for designing highly efficient, lithography free and extremely subwavelength mid-IR photonic devices for polarization engineering. In particular, we show the possibility of a significant reduction in the device footprint while maintaining an enormous extinction ratio from $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 based mid-IR polarizers. Furthermore, we investigate the application of sub-wavelength thin films of these vdW crystals towards engineering the polarization state of incident mid-IR light via precise control of polarization rotation, ellipticity and relative phase. We explain our results using natural in-plane hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 via both analytical and full-wave electromagnetic simulations. This work provides a lithography free alternative for miniaturized mid-infrared photonic devices using the hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 .

scholarly journals Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals

2019 ◽  
Vol 3 (3) ◽  
Author(s):  
Hugo Henck ◽  
Debora Pierucci ◽  
Jihene Zribi ◽  
Federico Bisti ◽  
Evangelos Papalazarou ◽  
...  
Keyword(s):  
Band Gap ◽  
Van Der Waals ◽  
Indium Selenide ◽  
Two Dimensional ◽  
Electronic Band ◽  
Electronic Band Gap

Engineering an Indium Selenide van der Waals Interface for Multilevel Charge Storage

2021 ◽  
Vol 13 (3) ◽  
pp. 4618-4625
Author(s):  
Yi-Ying Lu ◽  
Yu-Ting Peng ◽  
Yan-Ting Huang ◽  
Jia-Ni Chen ◽  
Jie Jhou ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Indium Selenide ◽  
Charge Storage

scholarly journals Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions

2014 ◽  
Vol 2 (11) ◽  
pp. 1064-1069 ◽  
Author(s):  
Nilanthy Balakrishnan ◽  
Zakhar R. Kudrynskyi ◽  
Michael W. Fay ◽  
Garry W. Mudd ◽  
Simon A. Svatek ◽  
...  
Keyword(s):  
Room Temperature ◽  
Van Der Waals

Fabrication and magnetic-electronic properties of van der Waals Cr4Te5 ferromagnetic film

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weiyuan Wang ◽  
Jiyu Fan ◽  
Hao Liu ◽  
Huan Zheng ◽  
Chuanlan Ma ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Van Der Waals ◽  
Ferromagnetic Film ◽  
Ferromagnetic Materials ◽  
Two Dimensional ◽  
Actual Number ◽  
Intrinsic Ferromagnetism

Exploiting two-dimensional room temperature ferromagnetic materials is always a significant and valuable work. However, the actual number of satisfied materials with intrinsic ferromagnetism is very limited. Here, the van der...

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