Wafer-Bonding and Thinning Technologies

MRS Bulletin ◽  
1998 ◽  
Vol 23 (12) ◽  
pp. 30-34 ◽  
Author(s):  
Cynthia A. Desmond-Colinge ◽  
Ulrich Gösele

“Wafer bonding” refers to the phenomenon in which mirror-polished, flat, and clean wafers of almost any material—when brought into contact at room temperature—are locally attracted to each other by van der Waals forces and adhere or “bond” to each other. Wafer bonding is alternatively also known as “direct bonding” or “fusion bonding,” or more colloquially as “gluing without glue.” Although this is by no means required, in most cases, the wafers involved in actual applications are typical semiconductor wafers consisting of single-crystalline material used in microelectronics or optoelectronics such as silicon or gallium arsenide.

2021 ◽  
Vol 2083 (2) ◽  
pp. 022066
Author(s):  
Pengying Niu ◽  
Beibei Liu ◽  
Huanjun Li

Abstract With the development of flexible wearable electronic devices, researches on self-healing conductive materials have become prevalent. However, the self-healing performance of most conductive self-healing materials is commonly achieved by the external stimulus that may cause damage to the equipment. Pparticularly, these self-healing materials may lose the self-healing properties when exposed to a high-humidity environment. Here, we adopted two hydrophobic monomers (2-methoxyethyl acrylate and ethyl methacrylate) to obtain a self-healing elastomer that could display self-healing properties in air or under water though van der Waals forces. The quality and mechanical properties of the elastomer material could keep stable after stored under water for half a month. This elastomer material was capable of self-healing in different environments with self-repair efficiencies more than 50% in deionized water, strong acid solution and strong alkaline solution. The self-repair efficiencies were up to 77% at room temperature(T=25°C) and 64% at low temperature (T=-20°C) in air.


Science ◽  
2020 ◽  
Vol 369 (6503) ◽  
pp. 542-545 ◽  
Author(s):  
Tian-Ran Wei ◽  
Min Jin ◽  
Yuecun Wang ◽  
Hongyi Chen ◽  
Zhiqiang Gao ◽  
...  

Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.


2020 ◽  
Author(s):  
Daniel B. Straus ◽  
Robert J. Cava

The design of new chiral materials usually requires stereoselective organic synthesis to create molecules with chiral centers. Less commonly, achiral molecules can self-assemble into chiral materials, despite the absence of intrinsic molecular chirality. Here, we demonstrate the assembly of high-symmetry molecules into a chiral van der Waals structure by synthesizing crystals of C<sub>60</sub>(SnI<sub>4</sub>)<sub>2</sub> from icosahedral buckminsterfullerene (C<sub>60</sub>) and tetrahedral SnI4 molecules through spontaneous self-assembly. The SnI<sub>4</sub> tetrahedra template the Sn atoms into a chiral cubic three-connected net of the SrSi<sub>2</sub> type that is held together by van der Waals forces. Our results represent the remarkable emergence of a self-assembled chiral material from two of the most highly symmetric molecules, demonstrating that almost any molecular, nanocrystalline, or engineered precursor can be considered when designing chiral assemblies.


Small ◽  
2021 ◽  
pp. 2102585
Author(s):  
Sofie Cambré ◽  
Ming Liu ◽  
Dmitry Levshov ◽  
Keigo Otsuka ◽  
Shigeo Maruyama ◽  
...  

RSC Advances ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 1916-1927
Author(s):  
Jianmei Huang ◽  
Qiang Wang ◽  
Pengfei Liu ◽  
Guang-hui Chen ◽  
Yanhui Yang

The evolution of the interface and interaction of h-BN and graphene/h-BN (Gr/h-BN) on Cu(111)–Ni and Ni(111)–Cu surface alloys versus the Ni/Cu atomic percentage on the alloy surface were comparatively studied by DFT-D2, including critical long-range van der Waals forces.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saurabh Dixit ◽  
Nihar Ranjan Sahoo ◽  
Abhishek Mall ◽  
Anshuman Kumar

AbstractMid-infrared (IR) spectral region is of immense importance for astronomy, medical diagnosis, security and imaging due to the existence of the vibrational modes of many important molecules in this spectral range. Therefore, there is a particular interest in miniaturization and integration of IR optical components. To this end, 2D van der Waals (vdW) crystals have shown great potential owing to their ease of integration with other optoelectronic platforms and room temperature operation. Recently, 2D vdW crystals of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2 \hbox {O}_5$$ V 2 O 5 have been shown to possess the unique phenomenon of natural in-plane biaxial hyperbolicity in the mid-infrared frequency regime at room temperature. Here, we report a unique application of this in-plane hyperbolicity for designing highly efficient, lithography free and extremely subwavelength mid-IR photonic devices for polarization engineering. In particular, we show the possibility of a significant reduction in the device footprint while maintaining an enormous extinction ratio from $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 based mid-IR polarizers. Furthermore, we investigate the application of sub-wavelength thin films of these vdW crystals towards engineering the polarization state of incident mid-IR light via precise control of polarization rotation, ellipticity and relative phase. We explain our results using natural in-plane hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 via both analytical and full-wave electromagnetic simulations. This work provides a lithography free alternative for miniaturized mid-infrared photonic devices using the hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 .


2014 ◽  
Vol 2 (11) ◽  
pp. 1064-1069 ◽  
Author(s):  
Nilanthy Balakrishnan ◽  
Zakhar R. Kudrynskyi ◽  
Michael W. Fay ◽  
Garry W. Mudd ◽  
Simon A. Svatek ◽  
...  

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