Calculation of the low-field mobility of quasi-two-dimensional electrons in a GaAs/Al0.36Ga0.64As superlattice at temperatures in the region of 77 K

2002 ◽  
Vol 36 (7) ◽  
pp. 808-815 ◽  
Author(s):  
S. I. Borisenko
Keyword(s):  
Two Dimensional ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

scholarly journals Analysis of Mobility in Graded-Channel SOI Transistors Aiming at Circuit Simulation

2020 ◽  
Vol 15 (2) ◽  
pp. 1-5
Author(s):  
Lucas Mota Barbosa da Silva ◽  
Bruna Cardoso Paz ◽  
Michelly De Souza
Keyword(s):  
Experimental Data ◽  
Numerical Simulations ◽  
Circuit Simulation ◽  
Two Dimensional ◽  
Soi Mosfet ◽  
Low Field ◽  
Field Mobility ◽  
Effective Mobility ◽  
Low Field Mobility

This work presents an analysis of the behavior of the effective mobility of graded-channel FD SOI transistors using an Y-Function-based technique. Low field mobility, linear and quadratic attenuation factors were extracted from two-dimensional numerical simulations. The influence of the length of both channel regions over these parameters was analyzed. The parameters extracted from experimental data were used in a SPICE simulator, showing that it is possible to simulated GC SOI MOSFET using a regular SOI MOSFET model, by adjusting its parameters.

scholarly journals Low-field mobility in ultrathin silicon nanowire junctionless transistors

2011 ◽  
Vol 99 (23) ◽  
pp. 233509 ◽  
Author(s):  
Bart Sorée ◽  
Wim Magnus ◽  
William Vandenberghe
Keyword(s):  
Silicon Nanowire ◽  
Low Field ◽  
Field Mobility ◽  
Junctionless Transistors ◽  
Low Field Mobility
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