Effect of carrier low-field mobility model on low-temperature drain current-voltage simulation of CMOS devices

1999 ◽  
Author(s):  
Wei-Lee Lu ◽  
Jenn-Gee Lo ◽  
Ting-Huan Chang
Keyword(s):  
Low Temperature ◽  
Drain Current ◽  
Mobility Model ◽  
Low Field ◽  
Current Voltage ◽  
Field Mobility ◽  
Low Field Mobility

LOW-FIELD MOBILITY MODEL ON PARABOLIC BAND ENERGY OF GRAPHENE NANORIBBON

2011 ◽  
Vol 25 (04) ◽  
pp. 281-290 ◽  
Author(s):  
N. AZIZIAH AMIN ◽  
ZAHARAH JOHARI ◽  
MOHAMMAD TAGHI AHMADI ◽  
RAZALI ISMAIL
Keyword(s):  
Carrier Mobility ◽  
Carrier Transport ◽  
Mobility Model ◽  
Graphene Nanoribbon ◽  
Band Energy ◽  
Low Field ◽  
Field Mobility ◽  
Increasing Temperature ◽  
Degenerate Regime ◽  
Low Field Mobility

The carrier mobility in low-field specifically in parabolic energy region of one-dimensional graphene nanoribbon (GNR) band energy is presented in this work. Low-field mobility model describe the carrier transport and its dependency factors when dealing with degenerate and non-degenerate principals. The result shows that the low-field mobility strongly depends on the temperature in the non-degenerate regime in which it sharply decreases with increasing temperature in the range of 10–250 K but the mobility is less affected by the temperature above 250 K. The effect of varying the GNR width to the mobility is also demonstrated in this work. In addition, it is also shown that the mobility depends on the carrier concentration in degenerate domain in which it increases at higher carrier concentrations.

scholarly journals On the Variability of the Low-Frequency Noise in UTBOX SOI nMOS-FETs

2013 ◽  
Vol 8 (2) ◽  
pp. 71-77
Author(s):  
Eddy Simoen ◽  
Maria G. C. Andrade ◽  
Luciano M. Almeida ◽  
M. Aoulaiche ◽  
C. Caillat ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Silicon Film ◽  
Low Frequency ◽  
Drain Current ◽  
Silicon On Insulator ◽  
Current Fluctuations ◽  
Frequency Noise ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

The variability of the low-frequency (LF) noise in n-channel MOSFETs fabricated on an Ultra-Thin Buried Oxide (UTBOX) Silicon-on-Insulator (SOI) substrate has been studied and compared with the variability in the threshold voltage and low-field mobility of the same devices. No correlation has been found between the noise magnitude and the DC parameters, suggesting that the traps responsible for the current fluctuations do not affect the latter. A possible explanation is that the LF noise is dominated by Generation-Recombination (GR) centers in the silicon film, which have less impact on the drain current.

scholarly journals A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations

2010 ◽  
Vol 57 (12) ◽  
pp. 3287-3294 ◽  
Author(s):  
Luca Silvestri ◽  
Susanna Reggiani ◽  
Elena Gnani ◽  
Antonio Gnudi ◽  
Giorgio Baccarani
Keyword(s):  
Mobility Model ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

scholarly journals Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 163-167 ◽  
Author(s):  
F. M. Bufler ◽  
P. D. Yoder ◽  
W. Fichtner
Keyword(s):  
Electron Transport ◽  
Drain Current ◽  
Channel Length ◽  
Deep Submicron ◽  
Strain Dependence ◽  
Saturation Velocity ◽  
Low Field ◽  
Field Mobility ◽  
Maximum Improvement ◽  
Low Field Mobility

The strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs is investigated by full-band Monte Carlo simulation. On the bulk level, the drift velocity at medium field strengths is still enhanced above Ge-contents of 20% in the substrate, where the low-field mobility is already saturated, while the saturation velocity remains unchanged under strain. In an n-MOSFET with a metallurgical channel length of 50nm, the saturation drain current is enhanced by up to 11%, but this maximum improvement is essentially already achieved at a Ge-content of 20% emphasizing the role of the low-field mobility as a key indicator of device performance in the deep-submicron regime.

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