Carbothermal synthesis of nanoparticulate silicon carbide in a self-contained protective atmosphere

2016 ◽  
Vol 52 (7) ◽  
pp. 655-660 ◽  
Author(s):  
V. N. Anfilogov ◽  
A. S. Lebedev ◽  
V. M. Ryzhkov ◽  
I. A. Blinov
Keyword(s):  
Silicon Carbide ◽  
Protective Atmosphere ◽  
Carbothermal Synthesis

Carbothermal synthesis of nanosized silicon carbide under an autonomous protective atmosphere

2015 ◽  
Vol 460 (1) ◽  
pp. 10-12 ◽  
Author(s):  
V. N. Anfilogov ◽  
A. S. Lebedev ◽  
V. M. Ryzhkov
Keyword(s):  
Silicon Carbide ◽  
Protective Atmosphere ◽  
Carbothermal Synthesis

Silicon Carbide Vertical JFET Operating at High Temperature

2008 ◽  
Vol 600-603 ◽  
pp. 1063-1066 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Keith P. Hilton ◽  
Nicolas G. Wright ◽  
Michael J. Uren ◽  
A.G. Munday ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Temperature Dependence ◽  
Power Law ◽  
Current Density ◽  
Electron Mobility ◽  
Room Temperature ◽  
Protective Atmosphere ◽  
State Resistance ◽  
A Current

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p+-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RO-S ) of 8 mW×cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 °C and without any protective atmosphere. The change of RO-S with temperature rising from 20 to 500 °C followed a power law (~ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC.

scholarly journals Thermodynamic analysis of the interaction of components in the Si–C–O system in the carbothermic synthesis of silicon carbide

2019 ◽  
Vol 484 (5) ◽  
pp. 559-562
Author(s):  
A. S. Lebedev ◽  
V. E. Eremyashev ◽  
E. A. Trofimov ◽  
V. N. Anfilogov
Keyword(s):  
Silicon Carbide ◽  
Phase Equilibria ◽  
Gas Phase ◽  
Silicon Oxide ◽  
Synthesis Temperature ◽  
Protective Atmosphere ◽  
Optimal Conditions ◽  
Oxide Melt ◽  
Interaction Of Components ◽  
Carbothermic Synthesis

Phase equilibria in the Si–C–O system at temperatures of 1400–1700°C were modeled to theoretically determine the optimal conditions for implementing our proposed method of carbothermic synthesis of silicon carbide in reactors with an autonomous protective atmosphere. It was found that, depending on the ratio between the initial components and the synthesis temperature, the equilibrium products of the synthesis can be various combinations of silicon carbide, a gas phase, residual amounts of silicon oxide and carbon, andan oxide melt formed at high temperatures.

Carbothermal Synthesis of Boron Nitride Coatings on Silicon Carbide

2003 ◽  
Vol 86 (11) ◽  
pp. 1830-1837 ◽  
Author(s):  
Linlin Chen ◽  
Haihui Ye ◽  
Yury Gogotsi ◽  
Michael J. McNallan
Keyword(s):  
Silicon Carbide ◽  
Boron Nitride ◽  
Carbothermal Synthesis ◽  
Nitride Coatings

Carbothermal synthesis of porous silicon carbide using mesoporous silicas

2016 ◽  
Vol 52 (7) ◽  
pp. 3917-3926 ◽  
Author(s):  
Nataliya D. Shcherban ◽  
Svitlana M. Filonenko ◽  
Pavel S. Yaremov ◽  
Sergii A. Sergiienko ◽  
Volodymir G. Ilyin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Mesoporous Silicas ◽  
Porous Silicon Carbide ◽  
Carbothermal Synthesis

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Microstructural Evaluation of Silicon Carbide Whisker Reinforced Alumina Fabricated with Carbon-Coated Whiskers

1991 ◽  
Vol 49 ◽  
pp. 920-921
Author(s):  
K. B. Alexander ◽  
P. F. Becher
Keyword(s):  
Silicon Carbide ◽  
High Resolution Electron Microscopy ◽  
Ceramic Composites ◽  
Interface Debonding ◽  
Resolution Electron ◽  
Microstructural Evaluation ◽  
Carbon Coated ◽  
Electron Energy Loss ◽  
Interfacial Films ◽  
Debonding Process

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.

TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

1995 ◽  
Vol 53 ◽  
pp. 350-351
Author(s):  
L. A. Giannuzzi ◽  
C. A. Lewinsohn ◽  
C. E. Bakis ◽  
R. E. Tressler
Keyword(s):  
Silicon Carbide ◽  
Creep Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Primary Creep ◽  
Excess Carbon ◽  
Silicon Carbide Fibers ◽  
Sic Fiber ◽  
Carbon Core ◽  
Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

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