Studies of Zinc and Zinc Oxide Nanofilms of Different Thickness Prepared by Magnetron Sputtering and Thermal Oxidation

Author(s):  
V. V. Tomaev ◽  
V. A. Polischuk ◽  
T. A. Vartanyan ◽  
S. V. Mjakin ◽  
N. B. Leonov ◽  
...  
2021 ◽  
Vol 129 (7) ◽  
pp. 937
Author(s):  
V.V. Tomaev ◽  
V.A. Polischuk ◽  
T.A. Vartanyan ◽  
S.V. Mjakin ◽  
N.B. Leonov ◽  
...  

Polycrystalline zinc films with the thickness of about 20, 40, 60, and 80 nm and mainly granular morphology comprising nearly spherical particles involving hexagonal crystals are obtained by magnetron sputtering on cover glass supports. Subsequently, the prepared layers were subjected to thermal oxidation in the air to obtain transparent zinc oxide layers. The synthesized films are studied by SEM and UV-vis spectroscopy. Based on the obtained spectra, optical properties of the layers are studied as a function of their thickness. The optical band gap Eg for the films with the thickness from 40 to 80 nm is estimated on the level about 3.28 eV similar to the reference value 3.3 eV for bulk zinc oxide, while for the thickness of 20 nm Eg slightly drops to about 3.24 eV. Keywords: zinc; zinc oxide; nanolayers; magnetron; oxidation; surface morphology; transparency; optical bandgap.


2007 ◽  
Vol 46 (6A) ◽  
pp. 3319-3323 ◽  
Author(s):  
Takahiro Hiramatsu ◽  
Mamoru Furuta ◽  
Hiroshi Furuta ◽  
Tokiyoshi Matsuda ◽  
Takashi Hirao

2005 ◽  
Vol 148 (1) ◽  
pp. 37-41 ◽  
Author(s):  
I. Sayago ◽  
M. Aleixandre ◽  
A. Martínez ◽  
M.J. Fernández ◽  
J.P. Santos ◽  
...  

2014 ◽  
Vol 908 ◽  
pp. 124-128 ◽  
Author(s):  
S.B. Chen ◽  
Z.Y. Zhong

Thin films of transparent conducting gallium and titanium doped zinc oxide (GTZO) were prepared on glass substrates by magnetron sputtering technique using a sintered ceramic target. The microstructural properties of the deposited thin films were characterized with X-ray diffraction (XRD). The results demonstrated that the polycrystalline GTZO thin films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the working pressure significantly affects the crystal structures of the thin films. The GTZO thin film deposited at the working pressure of 0.4 Pa has the best crystallinity, the largest grain size and the lowest stress.


2007 ◽  
Vol 124-126 ◽  
pp. 999-1002 ◽  
Author(s):  
Han Na Cho ◽  
Jang Woo Lee ◽  
Su Ryun Min ◽  
Chee Won Chung

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.


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