Effect of Holstein Electron-Phonon Coupling on Thermoelectric Properties of Gapped Graphene Structure

2019 ◽  
Vol 93 (5) ◽  
pp. 909-916 ◽  
Author(s):  
Parisa Zare ◽  
H. Rezania
Author(s):  
Gautam Sharma ◽  
Vineet Kumar Pandey ◽  
Shouvik Datta ◽  
Prasenjit Ghosh

Thermoelectric materials are used for conversion of waste heat to electrical energy. The transport coefficients that determine their thermoelectric properties depend on the band structure and the relaxation time of...


2019 ◽  
Vol 7 (20) ◽  
pp. 6120-6128 ◽  
Author(s):  
Liping Peng ◽  
Zhitian Liu

Polarons of PEDOT:PSS contribute to the surface polarization effect in a metal/PEDOT:PSS/metal structure device. The polarons of PEDOT:PSS contribute to surface polarization due to the electron–phonon coupling. Surface polarization as a new driving force can develop the Seebeck effect based on a metal/semi-metal/metal design.


2021 ◽  
Vol 12 (6) ◽  
pp. 1690-1695
Author(s):  
Zhongyu Liu ◽  
Yingwei Li ◽  
Wonyong Shin ◽  
Rongchao Jin

2021 ◽  
Vol 103 (2) ◽  
Author(s):  
I.Yu. Sklyadneva ◽  
R. Heid ◽  
P. M. Echenique ◽  
E. V. Chulkov

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rui Su ◽  
Zhaojian Xu ◽  
Jiang Wu ◽  
Deying Luo ◽  
Qin Hu ◽  
...  

AbstractThe performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.


2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Qing Dong ◽  
Quanjun Li ◽  
Shujia Li ◽  
Xuhan Shi ◽  
Shifeng Niu ◽  
...  

AbstractThe adoption of high pressure not only reinforces the comprehension of the structure and exotic electronic states of transition metal dichalcogenides (TMDs) but also promotes the discovery of intriguing phenomena. Here, 1T-TaS2 was investigated up to 100 GPa, and re-enhanced superconductivity was found with structural phase transitions. The discovered I4/mmm TaS2 presents strong electron–phonon coupling, revealing a good superconductivity of the nonlayered structure. The P–T phase diagram shows a dome shape centered at ~20 GPa, which is attributed to the distortion of the 1T structure. Accompanied by the transition to nonlayered structure above 44.5 GPa, the superconducting critical temperature shows an increasing trend and reaches ~7 K at the highest studied pressure, presenting superior superconductivity compared to the original layered structure. It is unexpected that the pressure-induced re-enhanced superconductivity was observed in TMDs, and the transition from a superconductor with complicated electron-pairing mechanism to a phonon-mediated superconductor would expand the field of pressure-modified superconductivity.


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