Effect of recoil atoms on radiation-defect formation in semiconductors under 1–10-MeV proton irradiation

2016 ◽  
Vol 10 (4) ◽  
pp. 693-697 ◽  
Author(s):  
V. V. Kozlovski ◽  
A. E. Vasil’ev ◽  
A. A. Lebedev
Keyword(s):  
Radiation Defect ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Recoil Atoms

Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 369-372
Author(s):  
Alexander M. Ivanov ◽  
Alexander A. Lebedev ◽  
V.V. Kozlovski
Keyword(s):  
Silicon Carbide ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Radiation Defects ◽  
Proton Scattering ◽  
Silicon Carbide Film ◽  
Low Energies ◽  
Simulated Distribution ◽  
Recoil Atoms ◽  
Mev Protons

The irradiation with 0.9 MeV electrons and with 8 MeV and 15 MeV protons were performed for studying radiation defects. Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature

2019 ◽  
Vol 963 ◽  
pp. 730-733
Author(s):  
Alexander A. Lebedev ◽  
Klavdya S. Davydovskaya ◽  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Radiation Defect ◽  
Room Temperature ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Removal Rate ◽  
Irradiation Temperature ◽  
Structural Defects ◽  
Radiation Defects

The influence of 15 MeV proton irradiation temperatures (room temperature (RT) - 700 ° C) on the processes of defect formation in commercially available 4H-SiC JBS structures has been studied. It has been shown that the carrier removal rate does not depend on the irradiation temperature. At the same time, the irradiation temperature affected on the spectrum of introduced radiation defects. The conclusion about the possible influence of SiC crystal lattice structural defects on the processes of radiation defect formation has been made.

Radiation defect formation in lithium tetraborate (LTB) single crystals

1994 ◽  
Vol 132 (4) ◽  
pp. 371-376 ◽  
Author(s):  
A. O. Matkovskii ◽  
D. Yu. Sugak ◽  
Ya. V. Burak ◽  
G. I. Malovichko ◽  
V. G. Grachov
Keyword(s):  
Single Crystals ◽  
Radiation Defect ◽  
Defect Formation ◽  
Lithium Tetraborate

scholarly journals Relationship between Markov Chains and Radiation Defect Formation Processes by Ion Irradiation

2014 ◽  
Vol 9 (3) ◽  
Author(s):  
Anatoly Ivanovich Kupchishin ◽  
Evgeniy Vladimirovich Shmygalev ◽  
Tatyana Alexandrovna Shmygaleva ◽  
Almaz Binuruli Jorabayev
Keyword(s):  
Markov Chains ◽  
Radiation Defect ◽  
Defect Formation ◽  
Ion Irradiation ◽  
Formation Processes

Effect of the interface on radiation defect formation in gallium arsenide

1979 ◽  
Vol 42 (3-4) ◽  
pp. 249-251 ◽  
Author(s):  
O. Yu. Borkovskaya ◽  
N. L. Dmitruk ◽  
R. V. Konakova ◽  
V. G. Litovchenko ◽  
Yu. A. Tkhorik ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Radiation Defect ◽  
Defect Formation
Sign in / Sign up

Export Citation Format

Share Document