Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature

2019 ◽  
Vol 963 ◽  
pp. 730-733
Author(s):  
Alexander A. Lebedev ◽  
Klavdya S. Davydovskaya ◽  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Radiation Defect ◽  
Room Temperature ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Removal Rate ◽  
Irradiation Temperature ◽  
Structural Defects ◽  
Radiation Defects

The influence of 15 MeV proton irradiation temperatures (room temperature (RT) - 700 ° C) on the processes of defect formation in commercially available 4H-SiC JBS structures has been studied. It has been shown that the carrier removal rate does not depend on the irradiation temperature. At the same time, the irradiation temperature affected on the spectrum of introduced radiation defects. The conclusion about the possible influence of SiC crystal lattice structural defects on the processes of radiation defect formation has been made.

scholarly journals Radiation Defects in Heterostructures 3C-SiC/4H-SiC

Crystals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 115 ◽  
Author(s):  
A.A. Lebedev ◽  
G.A. Oganesyan ◽  
V.V. Kozlovski ◽  
I.A. Eliseyev ◽  
P.V. Bulat
Keyword(s):  
Silicon Carbide ◽  
Hall Effect ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Structural Defects ◽  
Radiation Defects ◽  
Photoluminescence Spectra ◽  
Radiation Induced ◽  
Cubic Silicon Carbide ◽  
Effect Method

The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm−1, which is close to Vd in 4H-SiC. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3C-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes.

Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 369-372
Author(s):  
Alexander M. Ivanov ◽  
Alexander A. Lebedev ◽  
V.V. Kozlovski
Keyword(s):  
Silicon Carbide ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Radiation Defects ◽  
Proton Scattering ◽  
Silicon Carbide Film ◽  
Low Energies ◽  
Simulated Distribution ◽  
Recoil Atoms ◽  
Mev Protons

The irradiation with 0.9 MeV electrons and with 8 MeV and 15 MeV protons were performed for studying radiation defects. Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.

The Effect of Photoexcitation on Formation of Radiation Defects in Si

1990 ◽  
Vol 201 ◽  
Author(s):  
V. N. Mordkovich ◽  
A. B. Danilin ◽  
Yu. N. Erokhin ◽  
S. N. Boldyrev
Keyword(s):  
Ion Implantation ◽  
Radiation Damage ◽  
Radiation Defect ◽  
Damage Accumulation ◽  
Defect Formation ◽  
Charge Carriers ◽  
Light Illumination ◽  
Radiation Defects ◽  
Electronic Subsystem ◽  
Nonequilibrium Electron

AbstractPhotoexcitation of the Si electronic subsystem during ion implantation was found to be able to control radiation damage accumulation. Conditions when additional light illumination during ion bombardment suppresses radiation defect formation are determined. The model of effect observed taking into account recombination of nonequilibrium electron and holes is proposed. Coefficient between the change in amount of damage accumulated and the rate of nonequilibrium charge carriers generation is estimated.

RADIATION EFFECTS ON OPTICAL CHARACTERISTICS OF PbWO4

2008 ◽  
Vol 22 (21) ◽  
pp. 3695-3707 ◽  
Author(s):  
V. YEVSEYEV
Keyword(s):  
Optical Properties ◽  
Radiation Effects ◽  
Large Scale ◽  
Essential Role ◽  
Proton Irradiation ◽  
Defect Formation ◽  
High Energy ◽  
Radiation Defects ◽  
Lead Tungstate ◽  
High Energy Particles

The results of a study on the effect of γ- Co 60, fast (1 MeV) reactor neutron and 1 GeV proton irradiation on optical properties of lead tungstate ( PbWO 4) are presented. The peculiarities of optical absorption in PbWO 4 under these three types of irradiation are revealed. It is shown that in the case of irradiation of PbWO 4 with high energy particles 1 GeV protons, an essential role is played by large-scale radiation defects — disordered regions — and, related to it, fluctuating electrostatic potential. It is established that the efficiency of defect formation increases at the transition from gamma to neutron and further to proton irradiation.

Tie Effect of Rare-Earth Elements on the Entroy of Radiation Defects Ionization in N-Type Go

1993 ◽  
Vol 301 ◽  
Author(s):  
V.V. Petrov ◽  
T.D. Kharohenko ◽  
V.Yu. Yavid
Keyword(s):  
Rare Earth ◽  
Rare Earth Elements ◽  
Rare Earth Element ◽  
Radiation Defect ◽  
Earth Element ◽  
Defect Formation ◽  
Fold Increase ◽  
Local Deformation ◽  
Radiation Defects ◽  
Enthalpy And Entropy

ABSTRACTTe analyses of the processes of radiation defect formation in germanium doped with phosphorus in the presence of rare-earth element neodimium and without it has been carried out.It has been shown that the presence of neodimium in n-Ge results in the change of enthalpy and entropy of the major radiation defect ionization (complex with the level being near EB-0.20 eV). The change of enthalpy by 0.03-0.04 eV as well as more than six fold increase of entropy of the complex ionization in Ge:Nd has been stated to be connected with the local deformation of the lattice around defect formed in the process of irradiation.

The effect of structural defects in quartz crystals on radiation defect formation

Atomic Energy ◽  
1999 ◽  
Vol 87 (2) ◽  
pp. 607-610
Author(s):  
Sh. T. Boboyarova ◽  
Sh. A. Vakhidov ◽  
Zh. D. Ibragimov ◽  
R. T. Turdiev ◽  
O. B. Khushvakov
Keyword(s):  
Radiation Defect ◽  
Defect Formation ◽  
Structural Defects ◽  
Quartz Crystals

scholarly journals Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 4976
Author(s):  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
Klavdia S. Davydovskaya ◽  
Mikhail E. Levinshtein
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Irradiation Temperature ◽  
Radiation Hardness ◽  
Main Mechanism ◽  
Deep Acceptor ◽  
High Temperature Electronics ◽  
Temperature Electron

The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the probability of the formation of these centers decreases, and they are partly annealed out. As a result, the carrier removal rate in SiC becomes ~6 orders of magnitude lower in the case of irradiation at 500 °C. Once again, this proves that silicon carbide is promising as a material for high-temperature electronics devices.

The influence of irradiation temperature upon the radiation defect formation and conductivity compensation of n-GaAs

1996 ◽  
Vol 138 (1-2) ◽  
pp. 63-73 ◽  
Author(s):  
V. V. Kozlovski ◽  
L. F. Zakharenkov ◽  
T. I. Kol'Chenko ◽  
V. M. Lomako
Keyword(s):  
Radiation Defect ◽  
Defect Formation ◽  
Irradiation Temperature

Photoluminescence and Magnetic Properties of Undoped and (Mn, Co) co-doped ZnO Nanoparticles

2020 ◽  
Vol 16 (4) ◽  
pp. 655-666
Author(s):  
Mona Rekaby
Keyword(s):  
Magnetic Properties ◽  
Zno Nanoparticles ◽  
Room Temperature ◽  
Magnetic Measurements ◽  
Structural Defects ◽  
Ferromagnetic Behavior ◽  
Secondary Phases ◽  
Antiferromagnetic Ordering ◽  
Doped Zno ◽  
Co Doped

Objective: The influence of Manganese (Mn2+) and Cobalt (Co2+) ions doping on the optical and magnetic properties of ZnO nanoparticles was studied. Methods: Nanoparticle samples of type ZnO, Zn0.97Mn0.03O, Zn0.96Mn0.03Co0.01O, Zn0.95Mn0.03 Co0.02O, Zn0.93Mn0.03Co0.04O, and Zn0.91Mn0.03Co0.06O were synthesized using the wet chemical coprecipitation method. Results: X-ray powder diffraction (XRD) patterns revealed that the prepared samples exhibited a single phase of hexagonal wurtzite structure without any existence of secondary phases. Transmission electron microscope (TEM) images clarified that Co doping at high concentrations has the ability to alter the morphologies of the samples from spherical shaped nanoparticles (NPS) to nanorods (NRs) shaped particles. The different vibrational modes of the prepared samples were analyzed through Fourier transform infrared (FTIR) measurements. The optical characteristics and structural defects of the samples were studied through Photoluminescence (PL) spectroscopy. PL results clarified that Mn2+ and Co2+ doping quenched the recombination of electron-hole pairs and enhanced the number of point defects relative to the undoped ZnO sample. Magnetic measurements were carried out at room temperature using a vibrating sample magnetometer (VSM). (Mn, Co) co-doped ZnO samples exhibited a ferromagnetic behavior coupled with paramagnetic and weak diamagnetic contributions. Conclusion: Mn2+ and Co2+ doping enhanced the room temperature Ferromagnetic (RTFM) behavior of ZnO. In addition, the signature for antiferromagnetic ordering between the Co ions was revealed. Moreover, a strong correlation between the magnetic and optical behavior of the (Mn, Co) co-doped ZnO was analyzed.

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