Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy

2019 ◽  
Vol 53 (11) ◽  
pp. 1524-1528 ◽  
Author(s):  
E. A. Lipkova ◽  
A. I. Efimova ◽  
K. A. Gonchar ◽  
D. E. Presnov ◽  
A. A. Eliseev ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Silicon Nanowires ◽  
Free Charge Carrier ◽  
Charge Carrier Concentration ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Free Charge ◽  
Boron Doped ◽  
Doped Silicon

Infrared Diagnostics of Free Charge Carriers in Silicon Nanowires

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940030 ◽  
Author(s):  
A. I. Efimova ◽  
E. A. Lipkova ◽  
K. A. Gonchar ◽  
A. A. Eliseev ◽  
V. Yu. Timoshenko
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Free Charge Carrier ◽  
Charge Carrier Concentration ◽  
Attenuated Total Reflection ◽  
Free Charge ◽  
Cross Sectional ◽  
Text Type ◽  
Cross Sectional Size ◽  
Potential Applications

Free charge carrier concentration in arrays of silicon nanowires (SiNWs) with cross-sectional size of the order of 100[Formula: see text]nm was quantitatively studied by means of the infrared spectroscopy in an attenuated total reflection mode. SiNWs were formed on lightly-doped [Formula: see text]-type crystalline silicon substrates by metal-assisted chemical etching followed by additional doping through thermoactivated diffusion of boron at 900–1000∘C. The latter process was found to increase the concentration of free holes in SiNWs up to [Formula: see text][Formula: see text]cm[Formula: see text]. Potential applications of highly doped SiNWs in thermoelectric energy converters and infrared plasmonic devices are discussed.

scholarly journals Определение концентрации свободных носителей заряда в легированных бором кремниевых нанонитях при помощи инфракрасной спектроскопии в режиме нарушенного полного внутреннего отражения

2019 ◽  
Vol 53 (11) ◽  
pp. 1557
Author(s):  
Е.А. Липкова ◽  
А.И. Ефимова ◽  
К.А. Гончар ◽  
Д.Е. Преснов ◽  
А.А. Елисеев ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Annealing Temperature ◽  
Hole Concentration ◽  
Free Charge Carrier ◽  
Transverse Dimension ◽  
Charge Carrier Concentration ◽  
Attenuated Total Reflection ◽  
Free Charge ◽  
Free Hole ◽  
P Type

Attenuated total reflection infrared spectroscopy was used to determine the free charge carrier concentration in the arrays of silicon nanowires of characteristic transverse dimension of 50–100 nm and the length of the order of 10 μm which were formed on low-doped crystalline p-type silicon via metal-stimulated chemical etching and subjected to additional thermodiffusion boron doping at the temperatures 850–1000 оС. It was found out that the free hole concentration varies from 5•1018 to 3•1019 cm-3 depending on the annealing temperature and reaches it’s maximum at 900–950 оС. The results can be used to expand the scope of silicon nanowires application in photonics, sensorics and thermoelectric power converters.

Multivariate determination of glucose in whole blood by attenuated total reflection infrared spectroscopy

1989 ◽  
Vol 61 (18) ◽  
pp. 2009-2015 ◽  
Author(s):  
H. M. Heise ◽  
Ralf. Marbach ◽  
Guenter. Janatsch ◽  
J. D. Kruse-Jarres
Keyword(s):  
Infrared Spectroscopy ◽  
Whole Blood ◽  
Total Reflection ◽  
Attenuated Total Reflection
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