Optical Parameters of Both As2S3 and As2Se3 Thin Films from Ultraviolet to the Near-Infrared via Variable-Angle Spectroscopic Ellipsometer

2020 ◽  
Vol 54 (11) ◽  
pp. 1430-1438
Author(s):  
F. Abdel-Wahab ◽  
I. M. Ashraf ◽  
F. B. M. Ahmed
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Optical Parameters ◽  
Spectroscopic Ellipsometer ◽  
Variable Angle

ANNEALED In2S3 THIN FILMS PREPARED BY SPRAY TECHNIQUE: REPORT ON THE STRUCTURAL, OPTICAL AND DISPERSION ENERGY PARAMETERS

2019 ◽  
Vol 26 (07) ◽  
pp. 1850223
Author(s):  
Y. BCHIRI ◽  
N. BOUGUILA ◽  
M. KRAINI ◽  
S. ALAYA
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Near Infrared ◽  
Spray Pyrolysis Technique ◽  
Dielectric Constants ◽  
Index Formula ◽  
Optical Parameters ◽  
Dispersion Parameters ◽  
Dispersion Energy ◽  
Molar Ratios

In2S3 thin films with different S/In molar ratios (from 1.5 to 3.5) were deposited via a spray pyrolysis technique on glass substrates at 340∘C. Then, the obtained films were annealed at the same temperature 400∘C for 2[Formula: see text]h. X-ray diffraction study reveals the formation of cubic [Formula: see text]-In2S3 phase with (400) as preferred orientation. The crystallite size varies in the range 64–97[Formula: see text]nm. Optical analysis exhibits that transmittance in visible and near infrared regions is higher than 65% for all films. The optical band gap varied from 2.58[Formula: see text]eV to 2.67[Formula: see text]eV. The optical parameters (refractive index, extinction coefficient, dielectric constants) were calculated through the transmittance ([Formula: see text]) and reflectance ([Formula: see text]). Dispersion parameters ([Formula: see text], [Formula: see text]), high frequency dielectric constant ([Formula: see text]), refractive index ([Formula: see text]), oscillator length strength ([Formula: see text]), average oscillator wavelength ([Formula: see text]) and optical moments ([Formula: see text]) were determined by Wemple–DiDomenico model. The surface and volume energy losses with photon energy were also calculated. The optical and electrical conductivities were estimated. These properties of In2S3 films are important for photovoltaic applications.

Optical parameters of X-ray irradiated Cu7GeS5I thin films

2016 ◽  
Vol 39 (0) ◽  
pp. 51-56
Author(s):  
I. P. Studenyak ◽  
A. V. Bedak ◽  
V. Yu. Izai ◽  
А. М. Solomon ◽  
P. Kúš ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Parameters ◽  
X Ray

Study of optical parameters of Sulphur doped Se-As thin films as optical materials

Optik ◽  
2021 ◽  
pp. 167447
Author(s):  
Anjani Kumar ◽  
R.K. Shukla ◽  
Rajeev Gupta
Keyword(s):  
Thin Films ◽  
Optical Materials ◽  
Optical Parameters

scholarly journals High performing flexible optoelectronic devices using thin films of topological insulator

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Animesh Pandey ◽  
Reena Yadav ◽  
Mandeep Kaur ◽  
Preetam Singh ◽  
Anurag Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Nonlinear Optical Properties ◽  
Metallic Surface ◽  
Strong Light ◽  
High Performing ◽  
Decay Times

AbstractTopological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

Optical Properties and Zinc Nitride Thin Films Prepared Using Magnetron Reactive Sputtering

2014 ◽  
Vol 940 ◽  
pp. 11-15
Author(s):  
Jun Qin Feng ◽  
Jun Fang Chen
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Near Infrared ◽  
Fluorescence Emission ◽  
Emission Spectra ◽  
Sem Images ◽  
Fluorescence Emission Spectra ◽  
Glass Substrates ◽  
Zinc Nitride ◽  
Direct Band

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.

scholarly journals Two-dimensional perovskites with alternating cations in the interlayer space for stable light-emitting diodes

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Yiyue Zhang ◽  
Masoumeh Keshavarz ◽  
Elke Debroye ◽  
Eduard Fron ◽  
Miriam Candelaria Rodríguez González ◽  
...  
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Interlayer Space ◽  
High Current Density ◽  
Operational Stability ◽  
Infrared Light ◽  
Two Dimensional ◽  
Commercial Development ◽  
Light Emitting

Abstract Lead halide perovskites have attracted tremendous attention in photovoltaics due to their impressive optoelectronic properties. However, the poor stability of perovskite-based devices remains a bottleneck for further commercial development. Two-dimensional perovskites have great potential in optoelectronic devices, as they are much more stable than their three-dimensional counterparts and rapidly catching up in performance. Herein, we demonstrate high-quality two-dimensional novel perovskite thin films with alternating cations in the interlayer space. This innovative perovskite provides highly stable semiconductor thin films for efficient near-infrared light-emitting diodes (LEDs). Highly efficient LEDs with tunable emission wavelengths from 680 to 770 nm along with excellent operational stability are demonstrated by varying the thickness of the interlayer spacer cation. Furthermore, the best-performing device exhibits an external quantum efficiency of 3.4% at a high current density (J) of 249 mA/cm2 and remains above 2.5% for a J up to 720 mA cm−2, leading to a high radiance of 77.5 W/Sr m2 when driven at 6 V. The same device also shows impressive operational stability, retaining almost 80% of its initial performance after operating at 20 mA/cm2 for 350 min. This work provides fundamental evidence that this novel alternating interlayer cation 2D perovskite can be a promising and stable photonic emitter.

Electro-Optic Properties of (100)-Oriented (Pb,La(Zr,Ti)O3 Thin Film

2012 ◽  
Vol 185 ◽  
pp. 60-64
Author(s):  
Min Min Zhu ◽  
Ze Hui Du ◽  
Jan Ma
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Infrared Light ◽  
Single Crystal Substrate ◽  
Light Wavelength ◽  
Prism Coupler ◽  
Electro Optic ◽  
Crystal Substrate ◽  
Tm Model ◽  
Plzt Thin Films

(100)-oriented PLZT ((Pb1-x, Lax) (Zry,Ti1-y)1-x/4O3, x/y=9/65) films of up to ~ 1.23 μm have been developed on LaAlO3single crystal substrate by magnetron sputtering. The as-grown PLZT thin films exhibit high optical transparency in visible and near-infrared light wavelength and high quadratic (Kerr) EO coefficients. Prism coupler measurements reveal that the PLZT thin films possess large refractive index, as high as 2.524 in TE model and 2.481 in TM model. The transparency of >70% in the range of λ= 500-1200 nm, the optic band gap of 3.42 eV and the quadratic electro-optic (EO) coefficient of 3.38 x 10-17(m/V)2have been measured in the films. Due to the large EO coefficient and the micrometric thickness, the as-developed PLZT films have great potential in developing longitudinal-or transverse-type EO devices in electric and optic field

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