Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates

2016 ◽  
Vol 58 (7) ◽  
pp. 1448-1452 ◽  
Author(s):  
S. A. Kukushkin ◽  
A. V. Osipov ◽  
A. I. Romanychev
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
Si Substrates ◽  
Layer Deposition

Pulsed heating atomic layer deposition (PH-ALD) for epitaxial growth of zinc oxide thin films on c-plane sapphire

2021 ◽  
Author(s):  
Brandon Deane Piercy ◽  
Jamie Pearce Wooding ◽  
Shawn Gregory ◽  
Mark D. Losego
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Temperature Sensitive ◽  
Pulsed Heating ◽  
Layer Deposition

An in situ pulsed heating atomic layer deposition (PH-ALD) technique is used to grow heteroepitaxial ZnO thin films on c-plane sapphire from temperature-sensitive metalorganic precursors. During metalorganic precursor delivery, the...

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

2021 ◽  
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Aluminum Oxide ◽  
Thin Layer ◽  
Visible Light ◽  
Atomic Layer ◽  
Zno Films ◽  
Additional Layer ◽  
Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

scholarly journals Kinetic Monte Carlo Study of the Atomic Layer Deposition of Zinc Oxide

2018 ◽  
Vol 122 (47) ◽  
pp. 27044-27058 ◽  
Author(s):  
Timo Weckman ◽  
Mahdi Shirazi ◽  
Simon D. Elliott ◽  
Kari Laasonen
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Study ◽  
Atomic Layer ◽  
Layer Deposition

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

scholarly journals Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition

Nano Letters ◽  
2016 ◽  
Vol 16 (12) ◽  
pp. 7650-7654 ◽  
Author(s):  
Xiabing Lou ◽  
Hong Zhou ◽  
Sang Bok Kim ◽  
Sami Alghamdi ◽  
Xian Gong ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Contactless Measurement ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

scholarly journals RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

2013 ◽  
Vol 123 (5) ◽  
pp. 899-903 ◽  
Author(s):  
R. Ratajczak ◽  
A. Stonert ◽  
E. Guziewicz ◽  
S. Gierałtowska ◽  
T.A. Krajewski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Layer Deposition
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