State equations and properties of various polymorphous modifications of silicon and germanium

2017 ◽  
Vol 59 (6) ◽  
pp. 1085-1093 ◽  
Author(s):  
M. N. Magomedov
Keyword(s):  
State Equations ◽  
Silicon And Germanium ◽  
Polymorphous Modifications

Investigation of irradiation-induced nucleation processes in silicon and germanium

1995 ◽  
Vol 53 ◽  
pp. 224-225
Author(s):  
Harry A. Atwater ◽  
C.M. Yang ◽  
K.V. Shcheglov
Keyword(s):  
Room Temperature ◽  
Crystal Size ◽  
Initial Distribution ◽  
Engineering Control ◽  
Size Evolution ◽  
Silicon And Germanium ◽  
Ge Quantum Dot ◽  
And Control ◽  
Germanium Quantum Dots ◽  
Kinetics Of

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.

Electron paramagnetic resonance in silicon and germanium

1964 ◽  
Vol 83 (7) ◽  
pp. 433-502 ◽  
Author(s):  
L.D. Bogomolova ◽  
V.N. Lazukin ◽  
I.V. Chepeleva
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Paramagnetic Resonance ◽  
Silicon And Germanium ◽  
Electron Paramagnetic

scholarly journals Creation of pure non-crystalline diamond nanostructures via room temperature ion irradiation and subsequent thermal annealing

2021 ◽  
Author(s):  
Federico Picollo ◽  
Alfio Battiato ◽  
Federico Bosia ◽  
Fabio Scaffidi Muta ◽  
Paolo Olivero ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Group Iv ◽  
Chemical Bonds ◽  
Group Iv Elements ◽  
Silicon And Germanium ◽  
Subsequent Thermal Annealing

Carbon exhibits a remarkable range of structural forms, due to the availability of sp3, sp2 and sp1 chemical bonds. Contrarily to other group IV elements such as silicon and germanium,...

O,O-Monochelate complexes of silicon and germanium halides: The derivatives of l-mandelic N,N-dimethylamide

2009 ◽  
Vol 694 (2) ◽  
pp. 244-248 ◽  
Author(s):  
S.Yu. Bylikin ◽  
A.G. Shipov ◽  
E.P. Kramarova ◽  
Vad.V. Negrebetsky ◽  
A.A. Korlyukov ◽  
...  
Keyword(s):  
Silicon And Germanium ◽  
Derivatives Of
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