Variation with Fermi level of the hole cyclotron masses in silicon and germanium

1975 ◽  
Vol 16 (7) ◽  
pp. 891-894 ◽  
Author(s):  
N. Garcia ◽  
L.M. Falicov
Keyword(s):  
Fermi Level ◽  
Silicon And Germanium

Investigation of irradiation-induced nucleation processes in silicon and germanium

1995 ◽  
Vol 53 ◽  
pp. 224-225
Author(s):  
Harry A. Atwater ◽  
C.M. Yang ◽  
K.V. Shcheglov
Keyword(s):  
Room Temperature ◽  
Crystal Size ◽  
Initial Distribution ◽  
Engineering Control ◽  
Size Evolution ◽  
Silicon And Germanium ◽  
Ge Quantum Dot ◽  
And Control ◽  
Germanium Quantum Dots ◽  
Kinetics Of

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.

Electronic States near the Fermi Level in the Antiferromagnetic and Ferromagnetic Spinels of Zn 1− x Cu x Cr 2 Se 4 ; 0.0 ≤ x ≤ 1.0

2002 ◽  
Vol 75 (4-5) ◽  
pp. 359-371
Author(s):  
M. Hidaka ◽  
N. Tokiwa ◽  
M. Yoshimura ◽  
H. Fujii ◽  
Jae-Young Choi ◽  
...  
Keyword(s):  
Fermi Level ◽  
Electronic States

Electron paramagnetic resonance in silicon and germanium

1964 ◽  
Vol 83 (7) ◽  
pp. 433-502 ◽  
Author(s):  
L.D. Bogomolova ◽  
V.N. Lazukin ◽  
I.V. Chepeleva
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Paramagnetic Resonance ◽  
Silicon And Germanium ◽  
Electron Paramagnetic

Effect of proximity of the Fermi level to singular points in the band structure on the kinetic and lattice properties of metals and alloys

1988 ◽  
Vol 154 (3) ◽  
pp. 525 ◽  
Author(s):  
V.P. Antropov ◽  
Valentin G. Vaks ◽  
M.I. Katsnel'son ◽  
V.G. Koreshkov ◽  
A.I. Likhtenshtein ◽  
...  
Keyword(s):  
Band Structure ◽  
Fermi Level ◽  
Metals And Alloys ◽  
Singular Points

Family-dependent magnetism in atomic boron adsorbed armchair graphene nanoribbons

2019 ◽  
Vol 7 (21) ◽  
pp. 6241-6245 ◽  
Author(s):  
Wei-Wei Yan ◽  
Xiao-Fei Li ◽  
Xiang-Hua Zhang ◽  
Xinrui Cao ◽  
Mingsen Deng
Keyword(s):  
Fermi Level ◽  
Graphene Nanoribbons ◽  
Spin Splitting ◽  
Localized State ◽  
The Family ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene ◽  
Boron Adsorption

Boron adsorption induces a heavily localized state right at the Fermi level only in the family of W = 3p + 1 and thus spin-splitting occurs spontaneously.

scholarly journals Restructured single parabolic band model for quick analysis in thermoelectricity

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Jianbo Zhu ◽  
Xuemei Zhang ◽  
Muchun Guo ◽  
Jingyu Li ◽  
Jinsuo Hu ◽  
...  
Keyword(s):  
Fermi Level ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Optimization Design ◽  
State Of The Art ◽  
Band Model ◽  
Carrier Effective Mass ◽  
Intermediate Variables ◽  
Level Calculation ◽  
Spb Model

AbstractThe single parabolic band (SPB) model has been widely used to preliminarily elucidate inherent transport behaviors of thermoelectric (TE) materials, such as their band structure and electronic thermal conductivity, etc. However, in the SPB calculation, it is necessary to determine some intermediate variables, such as Fermi level or the complex Fermi-Dirac integrals. In this work, we establish a direct carrier-concentration-dependent restructured SPB model, which eliminates Fermi-Dirac integrals and Fermi level calculation and emerges stronger visibility and usability in experiments. We have verified the reliability of such restructured model with 490 groups of experimental data from state-of-the-art TE materials and the relative error is less than 2%. Moreover, carrier effective mass, intrinsic carrier mobility and optimal carrier concentration of these materials are systematically investigated. We believe that our work can provide more convenience and accuracy for thermoelectric data analysis as well as instructive understanding on future optimization design.

The sensitive tunability of superconducting critical temperature in high-buckled plumbene by shifting Fermi level

2021 ◽  
Vol 130 ◽  
pp. 114688
Author(s):  
Binyuan Zhang ◽  
Fei Guo ◽  
Mingfeng Zhu ◽  
Lanting Feng ◽  
Yisong Zheng
Keyword(s):  
Critical Temperature ◽  
Fermi Level

scholarly journals Independently Tunable Multipurpose Absorber with Single Layer of Metal-Graphene Metamaterials

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 284
Author(s):  
Chen Han ◽  
Renbin Zhong ◽  
Zekun Liang ◽  
Long Yang ◽  
Zheng Fang ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Fermi Level ◽  
Potential Application ◽  
Single Layer ◽  
Wide Band ◽  
Metamaterial Absorber ◽  
Unit Cell ◽  
Perfect Absorption ◽  
Solar Energy Harvesting ◽  
Band Absorption

This paper reports an independently tunable graphene-based metamaterial absorber (GMA) designed by etching two cascaded resonators with dissimilar sizes in the unit cell. Two perfect absorption peaks were obtained at 6.94 and 10.68 μm with simple single-layer metal-graphene metamaterials; the peaks show absorption values higher than 99%. The mechanism of absorption was analyzed theoretically. The independent tunability of the metamaterial absorber (MA) was realized by varying the Fermi level of graphene under a set of resonators. Furthermore, multi-band and wide-band absorption were observed by the proposed structure upon increasing the number of resonators and resizing them in the unit cell. The obtained results demonstrate the multipurpose performance of this type of absorber and indicate its potential application in diverse applications, such as solar energy harvesting and thermal absorbing.

scholarly journals Giant Rashba system on a semiconductor substrate with tunable Fermi level: Bi/GaSb(110)–(2×1)

2019 ◽  
Vol 3 (12) ◽  
Author(s):  
Takuto Nakamura ◽  
Yoshiyuki Ohtsubo ◽  
Naoki Tokumasu ◽  
Patrick Le Fèvre ◽  
François Bertran ◽  
...  
Keyword(s):  
Fermi Level ◽  
Semiconductor Substrate
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