Influence of the Microwave Amplitude on the Spin Current at the Pt/YIG Interface

Author(s):  
K. Y. Constantinian ◽  
G. A. Ovsyannikov ◽  
K. L. Stankevich ◽  
T. A. Shaikhulov ◽  
V. A. Shmakov ◽  
...  
Keyword(s):  
Author(s):  
K. Ando ◽  
E. Saitoh

This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.


2021 ◽  
Vol 103 (14) ◽  
Author(s):  
Lina Chen ◽  
Yaoyu Gu ◽  
Kaiyuan Zhou ◽  
Zishuang Li ◽  
Liyuan Li ◽  
...  

2021 ◽  
pp. 2100038
Author(s):  
Shuyuan Shi ◽  
Jie Li ◽  
Chuang‐Han Hsu ◽  
Kyusup Lee ◽  
Yi Wang ◽  
...  
Keyword(s):  

2021 ◽  
Vol 118 (23) ◽  
pp. 232401
Author(s):  
Qi Zhang ◽  
Zhuangzhuang Chen ◽  
Huafeng Shi ◽  
Xin Chen ◽  
Abhishek Talapatra ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Peng Zhang ◽  
Ryo Noguchi ◽  
Kenta Kuroda ◽  
Chun Lin ◽  
Kaishu Kawaguchi ◽  
...  

AbstractA quantum spin Hall (QSH) insulator hosts topological states at the one-dimensional (1D) edge, along which backscattering by nonmagnetic impurities is strictly prohibited. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces. The enhanced confinement could provide a route for dissipationless current and better advantages for applications relative to strong topological insulators (STIs). However, the topological side surface is usually not cleavable and is thus hard to observe. Here, we visualize the topological states of the WTI candidate ZrTe5 by spin and angle-resolved photoemission spectroscopy (ARPES): a quasi-1D band with spin-momentum locking was revealed on the side surface. We further demonstrate that the bulk band gap is controlled by external strain, realizing a more stable WTI state or an ideal Dirac semimetal (DS) state. The highly directional spin-current and the tunable band gap in ZrTe5 will provide an excellent platform for applications.


2021 ◽  
Vol 4 (1) ◽  
Author(s):  
X. R. Wang

AbstractSpin current is a very important tensor quantity in spintronics. However, the well-known spin-Hall effect (SHE) can only generate a few of its components whose propagating and polarization directions are perpendicular with each other and to an applied charge current. It is highly desirable in applications to generate spin currents whose polarization can be in any possible direction. Here anomalous SHE and inverse spin-Hall effect (ISHE) in magnetic systems are predicted. Spin currents, whose polarisation and propagation are collinear or orthogonal with each other and along or perpendicular to the charge current, can be generated, depending on whether the applied charge current is along or perpendicular to the order parameter. In anomalous ISHEs, charge currents proportional to the order parameter can be along or perpendicular to the propagating or polarization directions of the spin current.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jie Zhang ◽  
Eric P. Fahrenthold

AbstractThe spin current transmission properties of narrow zigzag graphene nanoribbons (zGNRs) have been the focus of much computational research, investigating the potential application of zGNRs in spintronic devices. Doping, fuctionalization, edge modification, and external electric fields have been studied as methods for spin current control, and the performance of zGNRs initialized in both ferromagnetic and antiferromagnetic spin states has been modeled. Recent work has shown that precise fabrication of narrow zGNRs is possible, and has addressed long debated questions on their magnetic order and stability. This work has revived interest in the application of antiferromagnetic zGNR configurations in spintronics. A general ab initio analysis of narrow antiferromagnetic zGNR performance under a combination of bias voltage and transverse electric field loading shows that their current transmission characteristics differ sharply from those of their ferromagnetic counterparts. At relatively modest field strengths, both majority and minority spin currents react strongly to the applied field. Analysis of band gaps and current transmission pathways explains the presence of negative differential resistance effects and the development of spatially periodic electron transport structures in these nanoribbons.


Sign in / Sign up

Export Citation Format

Share Document