Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction

2014 ◽  
Vol 59 (12) ◽  
pp. 1839-1843 ◽  
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M. V. Dorokhin ◽  
E. I. Malysheva ◽  
B. N. Zvonkov ◽  
A. V. Zdoroveishchev ◽  
Yu. A. Danilov ◽  
...  
2017 ◽  
Vol 816 ◽  
pp. 012035
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M V Dorokhin ◽  
M V Ved’ ◽  
E I Malysheva ◽  
P B Demina ◽  
A V Zdoroveyshchev ◽  
...  

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Ya-Hsuan Shih ◽  
Jih-Yuan Chang ◽  
Yen-Lung Huang ◽  
Jinn-Kong Sheu ◽  
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2006 ◽  
Vol 99 (7) ◽  
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N. C. Gerhardt ◽  
S. Hövel ◽  
C. Brenner ◽  
M. R. Hofmann ◽  
F.-Y. Lo ◽  
...  

Nano Letters ◽  
2020 ◽  
Vol 20 (6) ◽  
pp. 4162-4168 ◽  
Author(s):  
Yong-Ho Ra ◽  
Cheul-Ro Lee

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L502-L504 ◽  
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Pol Van Dorpe ◽  
Vasyl F. Motsnyi ◽  
Mayke Nijboer ◽  
Etienne Goovaerts ◽  
Viacheslav I. Safarov ◽  
...  

2017 ◽  
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M. P. Hoffmann ◽  
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A. Dadgar ◽  
...  

2005 ◽  
Vol 892 ◽  
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Elton Graugnard ◽  
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AbstractThe developments of two major components of a three terminal dual wavelength LED for excitation of multiple phosphors are described. Such a configuration will be novel Broadband Spectrally Dynamic Light Emitting Diode (BSDLED). First, work towards a functional tunnel junction in the GaN system is discussed. The developments of p+ and n+ GaN layers are specifically discussed in relation to their use in a buried current spreading contact layer. Second, the analysis of several phosphors and their application in a spectrally dynamic source is explored. The response to multiple wavelengths of the phosphors is analyzed to create a light source that can be tuned in “real time” to a wide range of correlated color temperatures.


2002 ◽  
Vol 80 (11) ◽  
pp. 1933-1935 ◽  
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Seong-Ran Jeon ◽  
Chang Sok Oh ◽  
Jeon-Wook Yang ◽  
Gye Mo Yang ◽  
Byueng-Su Yoo

Nano Letters ◽  
2017 ◽  
Vol 17 (2) ◽  
pp. 1212-1218 ◽  
Author(s):  
S. M. Sadaf ◽  
S. Zhao ◽  
Y. Wu ◽  
Y.-H. Ra ◽  
X. Liu ◽  
...  

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