scholarly journals Особенности согласования нижнего электрода с высокочастотным генератором смещения при реактивно-ионном травлении массивных подложек

2021 ◽  
Vol 91 (4) ◽  
pp. 657
Author(s):  
С.Д. Полетаев ◽  
А.И. Любимов
Keyword(s):  
Numerical Simulation ◽  
Reactive Ion Etching ◽  
Experimental Results ◽  
Substrate Holder ◽  
Rf Power ◽  
Special Design ◽  
Reactive Component ◽  
Lower Electrode ◽  
Ion Etching ◽  
Simulation Results

This paper presents theoretical and experimental results on reactive ion etching of massive substrates in freon-14 with RF bias at the lower electrode. A hypothesis is proposed according to which a large-sized substrate violates the matching of the lower electrode with the RF generator by adding an additional reactive component to the impedance of the lower electrode. A numerical simulation of reactive ion etching with substrates of various sizes in a CF4 environment is performed . The simulation results showed a significant increase in the reactive component of RF power at the lower electrode if the substrate area exceeds 50% of the area of the lower electrode, which is consistent with the proposed hypothesis. It has been experimentally shown that the etching of massive substrates violates the matching of the lower electrode with the RF generator. A special design of the substrate holder for massive substrates has been developed. It is shown that such a substrate holder significantly improves the matching of the RF generator with the lower electrode, especially when adding 0.3-0.9 l/h argon to the plasma-forming mixture.

scholarly journals Влияние металлических масок на согласование нижнего электрода с высокочастотным генератором смещения при реактивно-ионном травлении массивных подложек

2021 ◽  
Vol 47 (11) ◽  
pp. 44
Author(s):  
С.Д. Полетаев ◽  
А.И. Любимов
Keyword(s):  
Reflection Coefficient ◽  
High Frequency ◽  
Reactive Power ◽  
Reactive Ion Etching ◽  
Substrate Holder ◽  
Lower Electrode ◽  
Ion Etching ◽  
Power Reflection Coefficient ◽  
Power Component

The effect of metal masks on the matching of the lower electrode with a high-frequency bias generator during selective reactive-ion etching through the mask of massive substrates in freon-14 has been studied theoretically and experimentally. It is shown that masks with a substrate coating above 30% lead to an increase in the reactive power component at distances from the center close to the substrate radius. The absence of influence on the specific reactive power of the thickness and material of the masks is established. It is experimentally shown that masks with any practically significant coating coefficient of the substrate, connected to the lower electrode through the substrate holder, improve the matching, reducing the power reflection coefficient.

Reactive Ion Etching Induced Surface Damage of Silicon Carbide

2005 ◽  
Vol 483-485 ◽  
pp. 765-768 ◽  
Author(s):  
Jun Hai Xia ◽  
E. Rusli ◽  
R. Gopalakrishnan ◽  
S.F. Choy ◽  
Chin Che Tin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Reactive Ion Etching ◽  
Surface Damage ◽  
Textured Surface ◽  
Rf Power ◽  
Power Devices ◽  
Ion Etching ◽  
Maximum Value ◽  
Wide Range ◽  
Coarse Surface

Reactive ion etching of SiC induced surface damage, e.g., micromasking effect induced coarse and textured surface, is one of the main concerns in the fabrication of SiC based power devices [1]. Based on CHF3 + O2 plasma, 4H-SiC was etched under a wide range of RF power. Extreme coarse and textured etched surfaces were observed under certain etching conditions. A super-linear relationship was found between the surface roughness and RF power when the latter was varied from 40 to 160 W. A further increase in the RF power to 200 W caused the surface roughness to drop abruptly from its maximum value of 182.4 nm to its minimum value of 1.3 nm. Auger electron spectroscopy (AES) results revealed that besides the Al micromasking effect, the carbon residue that formed a carbon-rich layer, could also play a significant role in affecting the surface roughness. Based on the AES results, an alternative explanation on the origin of the coarse surface is proposed.

scholarly journals Numerical Simulations of V-Shaped Plates Subjected to Blast Loadings: A Validation Study

2016 ◽  
Vol 10 (11) ◽  
pp. 203
Author(s):  
Mohd Zaid Othman ◽  
Qasim H. Shah ◽  
Muhammad Akram Muhammad Khan ◽  
Tan Kean Sheng ◽  
M. A. Yahaya ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Numerical Simulations ◽  
Variable Mass ◽  
Blast Loading ◽  
Experimental Results ◽  
Average Difference ◽  
Simulation Results ◽  
Blast Loadings ◽  
Carrier Vehicle ◽  
Good Agreement

A series of numerical simulations utilizing LS-DYNA was performed to determine the mid-point deformations of V-shaped plates due to blast loading. The numerical simulation results were then compared with experimental results from published literature. The V-shaped plate is made of DOMEX 700 and is used underneath an armour personal carrier vehicle as an anti-tank mine to mitigate the effects of explosion from landmines in a battlefield. The performed numerical simulations of blast loading of V-shaped plates consisted of various angles i.e. 60°, 90°, 120°, 150° and 180°; variable mass of explosives located at the central mid-point of the V-shaped vertex with various stand-off distances. It could be seen that the numerical simulations produced good agreement with the experimental results where the average difference was about 26.6%.

scholarly journals MEMS-Based Integrated Triaxial Electrochemical Seismometer

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1156
Author(s):  
Wenjie Qi ◽  
Bowen Liu ◽  
Tian Liang ◽  
Jian Chen ◽  
Deyong Chen ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Ground Motion ◽  
Small Volume ◽  
Three Dimensional ◽  
Experimental Results ◽  
Good Prospect ◽  
High Symmetry ◽  
Noise Levels ◽  
Sensitivity Curves ◽  
Simulation Results

This paper presents a micro-electromechanical systems (MEMS)-based integrated triaxial electrochemical seismometer, which can detect three-dimensional vibration. By integrating three axes, the integrated triaxial electrochemical seismometer is characterized by small volume and high symmetry. The numerical simulation results inferred that the integrated triaxial electrochemical seismometer had excellent independence among three axes. Based on the experimental results, the integrated triaxial electrochemical seismometer had the advantage of small axial crosstalk and could detect vibration in arbitrary directions. Furthermore, compared with the uniaxial electrochemical seismometer, the integrated triaxial electrochemical seismometer had similar sensitivity curves ranging from 0.01 to 100 Hz. In terms of random ground motion response, high consistencies between the developed integrated triaxial electrochemical seismometer and the uniaxial electrochemical seismometer could be easily observed, which indicated that the developed integrated triaxial electrochemical seismometer produced comparable noise levels to those of the uniaxial electrochemical seismometer. These results validated the performance of the integrated triaxial electrochemical seismometer, which has a good prospect in the field of deep geophysical exploration and submarine seismic monitoring.

Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

2014 ◽  
Vol 909 ◽  
pp. 91-94
Author(s):  
Jun Gou ◽  
Hui Ling Tai ◽  
Jun Wang ◽  
De En Gu ◽  
Xiong Bang Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Taguchi Method ◽  
Vanadium Oxide ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Optimum Process ◽  
Rf Power ◽  
Ion Etching ◽  
Vanadium Oxide Thin Film

A high selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOxthin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOxetch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N2. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOxetch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4selectivity of 5 and a SiO2selectivity of 10.

An Analysis of the Evaluation Methods for Thermal Transmittance of Curtain Wall System Based on Simulators

2017 ◽  
Vol 865 ◽  
pp. 383-389 ◽  
Author(s):  
Min Jung Bae ◽  
Yu Min Kim ◽  
Gyeong Seok Choi ◽  
Jae Sik Kang ◽  
Hyun Jung Choi
Keyword(s):  
Numerical Simulation ◽  
Evaluation System ◽  
Evaluation Methods ◽  
Experimental Results ◽  
Curtain Wall ◽  
Performance Evaluation System ◽  
Thermal Transmittance ◽  
Simulation Results ◽  
Primary Evaluation ◽  
Wall System

With the window rating system being enforced, window companies are required to assign window ratings to their products. As the window ratings is based on the experimental results of fenestration, they are required to spend a lot of time and money conducting laboratory tests in order to assign window ratings to all their products. Through the window performance evaluation system using simulation, the thermal transmittance of products calculated based on numerical simulation can be used in place of experimental results to obtain the window rating. To ensure the credibility of simulation results, it is necessary to use the correct evaluation methods and primary information derived from in use practice should be available for the numerical simulation. The purpose of this paper is to investigate the evaluation methods that the simulator actually uses for the thermal performance of fenestration in WINDOW/THERM. The evaluation methods used by twenty-one simulators were investigated using primary evaluation methods for numerical simulation as the criteria. This study found that most of the simulation results were not trustworthy even though they were similar to experimental results because the evaluation methods used by simulators are incorrect. Furthermore, to enhance the credibility of simulation results, the simulator should be provided with the detailed information used in practice related to the evaluation performance of numerical simulation.

Reactive ion Etching of PbZrxTi1−xO3 and Ruo2 Tein Films

1993 ◽  
Vol 310 ◽  
Author(s):  
Dilip P. Vijay ◽  
Seshu B. Desu ◽  
Wei Pan
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Gas Pressure ◽  
Limiting Factor ◽  
Rf Power ◽  
Ion Etching ◽  
Pzt Thin Films ◽  
Etch Rates

AbstractIn this work, we have identified a suitable etch gas (CCI2,F2 ) for Reactive Ion Etching (RIE) of PZT thin films on RuO2 electrodes. The etch rate and anisotropy have been studied as a function of etching conditions. The effect of gas pressure, RF power and O2 concentration on the etch rate have been determined. It was found that ion bombardment effects are primarily responsible for the etching of both PZT and RuO2 thin films. Etch rates of the order of 20-30 nm/min were obtained for PZT thin films under low gas pressure and high RF power conditions. The etch residues and the relative etch rates of the components of the PZT solid solution were determined using XPS. The results show that the etching of PbO is the limiting factor in the etch process. For RuO2 thin films, etch rates of the order of 8-10 nm/min were obtained when O2 was added to the etch gas.

Reactive Ion Etching of TaSix in a CF4-O2 Discharge

1991 ◽  
Vol 240 ◽  
Author(s):  
C. P. Chen ◽  
K. S. Din ◽  
F. S. Huang
Keyword(s):  
Total Pressure ◽  
Etch Rate ◽  
Gas Flow ◽  
Reactive Ion Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Gaas Mesfet ◽  
Maximum Value ◽  
Oxygen Percentage ◽  
Sem Micrograph

ABSTRACTIn the self-alignment technology for GaAs MESFET, the pattern technique for refractory suicide gate is needed. Reactive ion etching (RIE) of TaSix on GaAs has been performed in a mixture of CF4 and O2 Etching properties have been studied as function of oxygen percentage, total pressure and power. The samples were then examined in Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to understand the surface morphology and constitution. It is found that the etch rate of TaSixincreased with increasing oxygen percentage initially, reached a maximum value near 10∼15% O2, then started to decrease with increasing oxygen at applied power 100 watt, pressure 50 mtorr, and total gas flow 40 seem. This etch rate also increases with RF power and total pressure in CF4 + O2 15% gas at gas flow rate 40 sccm. For GaAs etching, the rate is independent of oxygen percentage. This etch rate of GaAs also increases with power, but decreases with total pressure. Meanwhile, the SEM micrograph shows no undercut for sample after RIE at the applied power 140 watt with the pressure of 20 mtorr.

Efficiency Metallic Leading Edge Structure Bird Strike Resistant Design

2011 ◽  
Vol 338 ◽  
pp. 84-89 ◽  
Author(s):  
Mei Ying Zhao ◽  
Jing Jing Li
Keyword(s):  
Numerical Simulation ◽  
Absorption Rate ◽  
Leading Edge ◽  
Experimental Results ◽  
Structural Quality ◽  
Bird Strike ◽  
Edge Structure ◽  
Simulation Based ◽  
Simulation Results ◽  
Resistant Structure

This article investigated a new metallic leading edge bird strike resistant structure, using corrugate board as its enhanced component to absorb more bird kinetic energy. This structure was called as Corrugate Board Leading Edge (CBLE) structure. To verify the structure’s bird strike resistant ability, numerical simulation based on the LS-DYNA was carried out, and succeeding experiments were performed. However, the experimental results were not exciting. They were not as the simulation results we expected. The reasons were analyzed through this article. Finally a rivet-relative model was created considering the influence of riveting. This model was proved to be accurate by comparing with experimental results. Based on the analysis above, an Optimized CBLE (O-CBLE) structure was used to optimize the bird strike resistant ability, the energy absorption rate of O-CBLE structure increased 11.4% while the structural quality was only slightly increased.

Interaction Relationship Analysis of Surface Roughness on Aluminium Etched Wafer Using RIE

2014 ◽  
Vol 487 ◽  
pp. 214-217
Author(s):  
Zaliman Sauli ◽  
Vithyacharan Retnasamy ◽  
Aaron Koay Terr Yeow ◽  
Ng Wei Wei
Keyword(s):  
Surface Roughness ◽  
Factorial Design ◽  
Design Of Experiment ◽  
Reactive Ion Etching ◽  
Full Factorial Design ◽  
Strong Interactions ◽  
Rf Power ◽  
Ion Etching ◽  
Relationship Analysis ◽  
Full Factorial

This paper presents the interaction relationships between Tetrafluoromethane (CF4) gas, Oxygen (O2) gas, and RF power in response to the surface roughness of an Aluminium deposited wafer after being etched using Reactive Ion Etching (RIE). The investigation was done using the three factors full factorial design of experiment (DOE). Analysis was done qualitatively by plotting the main interaction plots. The results suggest that strong interactions are present between CF4 and RF power, CF4 and O2, and also O2 and RF power due to the intersection of the graphs. This implies that all three factors have interaction between each other towards the surface roughness on the deposited Aluminium after RIE.

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