THE CHEMICAL BOND IN SEMICONDUCTORS: THE GROUP V B TO VII B ELEMENTS AND COMPOUNDS FORMED BETWEEN THEM

1956 ◽  
Vol 34 (12A) ◽  
pp. 1369-1376 ◽  
Author(s):  
E. Mooser ◽  
W. B. Pearson
Keyword(s):  
Optical Properties ◽  
Chemical Bond ◽  
Chemical Bonding ◽  
Valence Bond ◽  
Electrical And Optical Properties ◽  
Group V ◽  
New Model ◽  
Bond Model

A brief review is first given of the developments which led to an understanding of the important role played by chemical bonding in semiconductors. The properties of the Group V B to VII B elements and of some compounds formed between these elements are then considered according to the valence bond model of Pauling. This leads to the conclusion that the band scheme in these substances is somewhat different to that which has been generally accepted, and we discuss the new model in relation to their electrical and optical properties.

High-Quality InGaAsP Crystals Grown by MOVPE Using TBA and TBP

1990 ◽  
Vol 216 ◽  
Author(s):  
A. Kuramata ◽  
S. Yasmazaki ◽  
K. Nakajima
Keyword(s):  
Optical Properties ◽  
Growth Conditions ◽  
Band Edge Emission ◽  
Photoluminescence Spectra ◽  
Edge Emission ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Group V ◽  
Movpe Growth ◽  
The Relationship

ABSTRACTTBA and TBP are attractive candidates for group V sources for MOVPE growth from the viewpoint of safety. We studied how the composition of InGaAsP crystals depends on growth conditions, and investigated its electrical and optical properties. The relationship between group V sources and crystals indicates that TBA and TBP decompose into AsH and PH. Since there is no carbon in AsH and PH, carbon contamination in the crystals is expected to be small. Carrier concentrations ranged from 5×1014 cm−3 to 1.5×1015 cm−3. Photoluminescence spectra at 4.2K showed strong band-edge emission with no acceptor-related emission. Based on the electrical and optical properties of the crystals, we conclude that high-quality InGaAsP crystals can be grown using TBA and TBP.

Electrical and Optical Properties of n-type and p-type ZnO

2004 ◽  
Vol 829 ◽  
Author(s):  
D. C. Look ◽  
B. Claflin
Keyword(s):  
Optical Properties ◽  
Uv Light ◽  
Detailed Knowledge ◽  
Free Electrons ◽  
Electrical And Optical Properties ◽  
Group V ◽  
Light Emitting ◽  
P Type ◽  
Uv Leds ◽  
Dominant Acceptor

ABSTRACTIn recent years, ZnO has been proposed for new electronic and optoelectronic devices, such as transparent transistors and UV light-emitting diodes (LEDs). The LED application will require both n-type and p-type ZnO, but the latter is difficult to produce, and progress in this area will require a detailed knowledge of the various impurities and defects that affect the electrical and optical properties. The dominant donors in as-grown ZnO are usually thought to be interstitial H and substitutional AlZn, with activation energies of about 40 and 65 meV, respectively. However, interstitial Zn and its associated complexes may also contribute free electrons. The dominant acceptor, at least in vapor-phase-grown material, is the Zn vacancy; however, substitutional NO is also present, although sometimes passivated by H. To produce p-type ZnO, it is necessary to dope with acceptor-type impurities, and some success has been achieved with N, P, As, and Sb. However, only N has been proven to have simple substitutional character (NO), and more complicated acceptor structures, such as AsZn-2VZn, have been proposed for some of the other group V elements. Both homostructural and heterostructural UV LEDs have been fabricated, although not of high luminescent power so far. The main objective of this paper is to review the Hall-effect and photoluminescence results on n-type and p-type ZnO.

Effects of Surfactants N and Br on Ordering in GaInP

2003 ◽  
Vol 794 ◽  
Author(s):  
D.C. Chapman ◽  
A.D. Howard ◽  
L. Rieth ◽  
R.R. Wixom ◽  
G.B Stringfellow
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Order Parameter ◽  
The Other ◽  
Ordered Structure ◽  
Electrical And Optical Properties ◽  
Group V ◽  
Step Velocity ◽  
Interesting Class ◽  
Thermodynamic Effects

ABSTRACTFormation of the CuPt ordered structure during the organometallic vapor phase epitaxial (OMVPE) growth of GaInP has significant effects on the electrical and optical properties, necessitating control of ordering. Formation of the CuPt structure is thermodynamically driven by the surface structure during growth. This has led to the study of the use of surfactants as a way of controlling ordering. To date, these studies have centered on the group V elements isoelectronic with P. Sb and Bi are both larger than P. This leads to less ordering. N, on the other hand, is smaller than P, which makes it potentially interesting. The other disordering mechanism, observed for Te as a surfactant in GaInP, is kinetic. Rapid step propagation leads to a reduction in ordering. This suggests another potentially interesting class of surfactants, the group VII elements, such as Br, that have been reported to increase the step velocity during OMVPE growth. This paper describes the results of the addition of the surfactants N and Br during the OMVPE growth of GaInP. Addition of N (DMHy) results in a clear reduction in order parameter, due to thermodynamic effects. The addition of Br (CBr4) is also observed to systematically decrease the amount of CuPt ordering and is found to correspond to a significant roughening of the surface, which is postulated to be the origin of the reduction in order parameter.

Electrical and Optical Properties of Cd2SnO4Thin Film Depending on its Chemical Bond

2011 ◽  
Vol 551 (1) ◽  
pp. 123-129
Author(s):  
Woo-Jin Jung ◽  
Sang-Hwan Lee ◽  
Soon-Yong Park ◽  
Eun-Woo Lee ◽  
Joon-Hak Bae ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Bond ◽  
Electrical And Optical Properties

ELECTRICAL AND OPTICAL PROPERTIES OF UHV SUBLIMED a-As

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties
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