The preparation and some properties of transparent conducting ZnO for use in solar cells

1982 ◽  
Vol 60 (10) ◽  
pp. 1387-1390 ◽  
Author(s):  
J. H. Morgan ◽  
D. E. Brodie
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Room Temperature ◽  
Evaporation Rate ◽  
Dc Glow Discharge ◽  
Electron Carrier ◽  
Glass Substrates ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Evaporation Technique

The fabrication of transparent conducting films of ZnO is described. These films are deposited on room temperature glass substrates using an enhanced reactive evaporation technique in which the power in a dc glow discharge, the oxygen pressure, and the zinc evaporation rate are controlled separately. Each of these parameters is adjusted to optimize the required film property.Films with ρ = 0.0014 Ω cm and an absorption of ~ 1% at 550 nm and 40 Ω/ have been prepared with no annealing. The electron carrier densities are ~ 1.3 × 1020 cm−3 and the mobilities are ~ 34 cm2/(Vs) with a variation of less than ~ 15% between −120 and +150 °C.

scholarly journals Preparation of SnO2 Transparent Conducting Films for Dye-Sensitized Solar Cells by SPD Technique

2008 ◽  
Vol 76 (2) ◽  
pp. 132-135 ◽  
Author(s):  
Masayuki OKUYA ◽  
Kenji OHASHI ◽  
Takafumi YAMAMOTO ◽  
János MADARÁSZ
Keyword(s):  
Solar Cells ◽  
Dye Sensitized Solar Cells ◽  
Dye Sensitized ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Sensitized Solar Cells

Study of InAlN thin films deposited on silicon, ITO/PET, and ITO/GLASS substrates at room temperature for its possible use in solar cells

2021 ◽  
Author(s):  
L. F. Mulcue Nieto ◽  
W. Saldarriaga ◽  
W. de la Cruz ◽  
E. Restrepo ◽  
M. S. Ospina ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Room Temperature ◽  
Glass Substrates ◽  
Ito Glass

Bandgap Engineering of ZnO Transparent Conducting Films

2003 ◽  
Vol 763 ◽  
Author(s):  
K. Matsubara ◽  
H. Tampo ◽  
A. Yamada ◽  
P. Fons ◽  
K. Iwata ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
Bandgap Engineering ◽  
Trade Off ◽  
Glass Substrates ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Average Optical Transmittance ◽  
Mg Content

AbstractLow resistivity and transparent Al doped ZnMgO films were deposited on glass substrates by a pulsed laser deposition system. For up to 32 atm% of Mg content, segregation of a MgO phase was not observed. The bandgap of these films could be widened to about 4 eV with increasing Mg content. The relation between bandgap and resistivity was found to be a trade-off; i.e. the larger the bandgap, the higher the resistivity. The maximum bandgap among films with an electrical resistivity of less than 10-3 Ω cm was 3.94 eV. The average optical transmittance of these films was more than 90 % for wavelengths λ between 400 and 1100 nm. The transmittance around λ = 330 nm was still 50 %.

scholarly journals Effect of Pb dopant On A.C mechanism of ZnS thin films

2019 ◽  
Vol 12 (25) ◽  
pp. 80-88
Author(s):  
Salma M. Shaban
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Atomic Weight ◽  
Thickness Effect ◽  
Frequency Effect ◽  
Frequency Range ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Vacuum Evaporation Technique ◽  
Effect Of Doping

Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric constant within frequency range (10 KHz - 10 MHz) are measured. The frequency dependence of a.c conductivity is matched with correlated barrier hoping especially at higher frequency. Effect of doping on behavior of a.c mechanism within temperature range 298-473 K was studied.

Optical and electrical properties of transparent conducting In2O3–ZrO2 films

2000 ◽  
Vol 15 (1) ◽  
pp. 21-24 ◽  
Author(s):  
S. B. Qadri ◽  
H. Kim ◽  
H. R. Khan ◽  
A. Piqué ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Thin Films ◽  
Zirconium Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Electrical Conductivities ◽  
Electrical Resistivities

The optical transparencies and electrical conductivities of thin films of In2O3 mixed with ZrO2 have been investigated. These films were deposited on glass substrates at room temperature using pulsed-laser deposition. Indium–zirconium oxide films with a ZrO2 content up to a 15 wt% were conducting and more than 80% transparent from 450 to 700 nm. As the ZrO2 content increased from 0 to 15 wt%, the electrical resistivities increased from 1.28 × 10−3 to 6.48 × 10−2 Ω cm, the carrier densities were decreased from 2.14 × 1020 to 1.0 × 1018/cm3, and the Hall mobilities decreased from 21 to 5 cm2 V−1 s−1, all monotonically.

scholarly journals Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Sin-Liang Ou ◽  
Feng-Min Lai ◽  
Lun-Wei Yuan ◽  
Da-Long Cheng ◽  
Kuo-Sheng Kao
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Visible Region ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Deposition Parameters ◽  
Sample Position ◽  
Doped Zno

The off-axis sputtering technique was used to deposit Al-doped ZnO (AZO) films on glass substrates at room temperature. For the illustration of the sample position in the sputtering chamber, the value ofR/ris introduced. Here,ris the radius of AZO target and R is the distance between the sample and the center of substrate holder. A systematic study for the effect of deposition parameters on structural, optical, and electrical properties of AZO films has been investigated in detail. As the sample position ofR/ris fixed at 1.8, it is found that the as-deposited AZO film has relatively low resistivity of 2.67 × 10−3 Ω-cm and high transmittance above 80% in the visible region. Additionally, after rapid thermal annealing (RTA) at 600°C with N2atmosphere, the resistivity of this AZO film can be further reduced to 1.19 × 10−3 Ω-cm. This indicates the AZO films prepared by off-axis magnetron sputtering and treated via the appropriate RTA process have great potential in optoelectronic applications.

Wide-gap CIGS solar cells with Zn1-yMgyO transparent conducting film

2005 ◽  
Vol 865 ◽  
Author(s):  
K. Matsubara ◽  
A. Yamada ◽  
S. Ishizuka ◽  
K. Sakurai ◽  
H. Tampo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Band Gap Energy ◽  
Short Circuit Current Density ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Wide Gap ◽  
Cigs Solar Cells ◽  
Mg Content

AbstractZn1-yMgyO bandgap controllable transparent conducting films were used for the wide-gap Cu(In1-xGax)Se2 thin film solar cells. Undoped Zn1-yMgyO and Al doped Zn1-yMgyO films were deposited by co-sputtering using a carousel type sputtering apparatus. Zn1-yMgyO films with Mg content y of up to 0.10 were examined. For Cu(In1-xGax)Se2 with band gap energy ˜1.38 eV, the cell performance was slightly improved by using Zn1-yMgyO and Al doped Zn1-yMgyO instead of ZnO and Al doped ZnO. An unexpected improvement of short circuit current density was observed.

Tunnel Type Magnetoresistance in Electron Beam Deposited Films of Compositions (Co0.5Fe0.5)x(Al2O3)(100-x) (7 ≤ x ≤ 52)

1999 ◽  
Vol 602 ◽  
Author(s):  
H.R. Khan ◽  
A. Ya Vovk ◽  
A.F. Kravets ◽  
O.V. Shipil ◽  
A.N. Pogoriliy
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Tunneling Magnetoresistance ◽  
Metal Insulator ◽  
Glass Substrates ◽  
Electron Beam Evaporation Technique ◽  
Crystallite Sizes ◽  
Evaporation Technique ◽  
Deposited Films

AbstractA series of 400 nm thick metal-insulator films of compositions (Co50Fe50)x(Al2O3(100-x) (7 ≤ x ≤ 52; x is in vol.%) are deposited on glass substrates using dual electron beam evaporation technique. The films are nanocrystalline with crystallite sizes of 1-3 nm. Resistivity of the films varies as a function of (I/T)0.5 showing a tunneling type behaviour. The films show isotropic and negative magnetoresistance (GMR). A film of composition (Co50Fe50)82.5(Al2O3)17.5 show maximum tunneling magnetoresistance (TMR) of 7.2% at room temperature and in a magnetic field of 8.2 kOe.

Some properties of dc glow discharge amorphous silicon solar cells

1982 ◽  
Vol 53 (1) ◽  
pp. 703-707 ◽  
Author(s):  
H. Wiesmann ◽  
C. Coleman ◽  
A. Ghosh
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Dc Glow Discharge

Transparent conducting ITAZO anode films grown by a composite target RF magnetron sputtering at room temperature for organic solar cells

2009 ◽  
Vol 24 (8) ◽  
pp. 085025 ◽  
Author(s):  
Nanhai Sun ◽  
Guojia Fang ◽  
Qiao Zheng ◽  
Mingjun Wang ◽  
Nishuang Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Magnetron Sputtering ◽  
Organic Solar Cells ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Composite Target ◽  
Transparent Conducting ◽  
Anode Films
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